marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number 1 2 3 Marking on Product: SFMAUI Backside: cathode Applications: Features / Advantages:
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O-252
60747and
20110721a
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IXYS DSA 12
Abstract: No abstract text available
Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:
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O-252
60747and
20110721a
IXYS DSA 12
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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DIODE MARKING CODE B3
Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:
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DSEP6-06BS
Recti10
60747and
20110915a
DIODE MARKING CODE B3
DIODE MARKING B4
marking B4 diode
l4 marking code diode
DSEP6-06BS
diode B4 252
diode marking b2
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Untitled
Abstract: No abstract text available
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06BS
60747and
20110915a
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PDF
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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Original
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60747and
20090323a
DPG10I300PA
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Untitled
Abstract: No abstract text available
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
et-01
ERB32
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1SS184
Abstract: marking code b3 reverse recovery time
Text: 1SS184 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: B3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Tj = 25OC
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1SS184
OT-23
1SS184
marking code b3
reverse recovery time
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B3202
Abstract: diode b32 ERB32 marking code 12A DIODE b32 01 Diode marking code b32
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
ERB32
B3202
diode b32
marking code 12A
DIODE b32 01
Diode marking code b32
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diode b32
Abstract: ERB32 marking B32 diode
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
diode b32
ERB32
marking B32 diode
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marking code b3
Abstract: 1SS184
Text: 1SS184 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: B3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Tj = 25OC
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1SS184
OT-23
marking code b3
1SS184
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03866
Abstract: 07062
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
03866
07062
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PDF
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ERB35
Abstract: marking code b35 10MSA
Text: ERB35 1A ( 200V / 1A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications Lot No. High speed switching 70 B35 -02 •·· Abridged type name
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ERB35
ERB35
marking code b35
10MSA
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10MSA
Abstract: No abstract text available
Text: ERB35 1A ( 200V / 1A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications Lot No. High speed switching 70 B35 -02 •·· Abridged type name
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ERB35
ERB35
10MSA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 SOT-23 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: B3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage
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OT-23
1SS184
OT-23
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ISS184
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching Diode SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1.ANODE MARKING: B3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃
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OT-23
1SS184
OT-23
100mA
ISS184
ISS184
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marking code B3 SOD-323
Abstract: sod323 marking NO
Text: TAK CHEONG 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type RB551V-30 TA = 25°C unless otherwise noted Parameter Power Dissipation Units
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RB551V-30
OD-323
marking code B3 SOD-323
sod323 marking NO
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B3708
Abstract: fast recovery diode 1000v 10A b37 diode diode marking b37 ERB37 10A800 marking b37
Text: ERB37 1.0A ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications High speed switching
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ERB37
B3708
fast recovery diode 1000v 10A
b37 diode
diode marking b37
ERB37
10A800
marking b37
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Untitled
Abstract: No abstract text available
Text: SIEMENS BXY 42BA-7 Silicon PIN Diode • Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B XY 42BA-7 27 Q62702-X160 Pin Configuration * ° H<3-EHA07007 Package1 Cerec-X Maximum Ratings
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OCR Scan
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42BA-7
Q62702-X160
3--------EHA07007
0Qbb740
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PDF
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