diode AY 101
Abstract: No abstract text available
Text: IPA60R385CP CoolMOS Power Transistor Product Summary Features V =L 1[%^Ri V DL:HI;><JG: D; B:G>I/ HGM.@ /.) R =L"`_#%^Ri@T [Y V2AIG6ADL<6I:8=6G<: O )',1. Q X%eja *0 _< V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN
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IPA60R385CP
86E67
688DG9
diode AY 101
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Untitled
Abstract: No abstract text available
Text: IPA60R165CP CoolMOS Power Transistor Product Summary Features V !0 1[%^Ri V DL:HI;><JG: D; B:G>I/ HGiJX /.) R =L"`_#%^Ri@T [Y V2AIG6ADL<6I:8=6G<: O )'*/. Q X%eja ,2 _< V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN
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IPA60R165CP
86E67
688DG9
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Untitled
Abstract: No abstract text available
Text: IPI50R399CP CoolMOSTM Power Transistor Product Summary Features V DL:HI;><JG:D;B:G>I/,+M.X V2AIG6ADL<6I:8=6G<: V !08M[^Ri ./) O R =L"`_#%^Ri )',22 *0 _< Q X%eja V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN
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IPI50R399CP
86E67
688DG9
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D9 DG transistor
Abstract: marking code 6C8 6dj8 transistor DJ marking transistor marking 6c9 IPA60R385CP diode marking 7n 6b102
Text: IPA60R385CP CoolMOS Power Transistor Product Summary Features V =L V DL: HI;><JG: D; B : G>I/ HG M . @ 1 [%^Ri /.) R =L"`_#%^Ri@T [ Y V 2 AIG6 ADL <6I: 8 =6G<: O )',1. " *0 Q X%eja _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A
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IPA60R385CP
D9 DG transistor
marking code 6C8
6dj8
transistor DJ marking
transistor marking 6c9
IPA60R385CP
diode marking 7n
6b102
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6dj8
Abstract: D9 DG transistor marking code 6C8 6b102 IPA60R165CP DIODE marking D9 MARKING GC INFINEON
Text: IPA60R165CP CoolMOS Power Transistor Product Summary Features V !0 V DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri /.) R =L"`_#%^Ri@T [ Y V 2 AIG6 ADL <6I: 8 =6G<: O )'*/. " ,2 Q X%eja _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A
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IPA60R165CP
6dj8
D9 DG transistor
marking code 6C8
6b102
IPA60R165CP
DIODE marking D9
MARKING GC INFINEON
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JG Diode
Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R520CP
JG Diode
diode EZD
jg transistor
T1027
f7 transistor
MARKING 7C
DIODE marking 7b
PG-TO252-3
transistor 7g
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Untitled
Abstract: No abstract text available
Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R520CP
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DFJI
Abstract: JG marking diode EZD transistor 7g
Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R399CP
/L-33J
DFJI
JG marking
diode EZD
transistor 7g
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Untitled
Abstract: No abstract text available
Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R399CP
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Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
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IRFPS3810PbF
Super-247TM
Super-247
O-274AA)
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MA2Z392
Abstract: MA392
Text: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm INDICATES CATHODE 0.4 ± 0.15 1.7 ± 0.1 • Absolute Maximum Ratings Ta = 25°C 2.5 ± 0.2 Unit VR 10 V Forward current (DC) IF 40 mA Junction temperature Tj 125 °C Storage temperature
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MA2Z392
MA392)
MA2Z392
MA392
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MA2Z392
Abstract: MA392
Text: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 (0.4) 5° 1.7±0.10 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation
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MA2Z392
MA392)
MA2Z392
MA392
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Untitled
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 (0.4) 5° M Di ain sc te on na tin nc ue e/ d 1.7±0.10 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation
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MA2Z392
MA392)
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Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
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IRFPS3810PbF
Super-247â
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130TX10
Abstract: V22ZA3 varistor 15k V33ZA5 z1 V22ZA3 V100ZA15 V120ZA4 V661DB40 S-750 V150LTX10A
Text: Varistor Products High Reliability Varistors High Reliability Varistors MIL QPL Description Littelfuse high reliability varistors offer the latest in increased product performance, and are available for applications requiring quality and reliability assurance
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MIL-STD19500,
-S-750,
MIL-R-83530
V130LA2
130TX10
V22ZA3
varistor 15k
V33ZA5
z1 V22ZA3
V100ZA15
V120ZA4
V661DB40
S-750
V150LTX10A
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jtp 7n
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE bbS3T31 003bi4fl5 fl33 BY527 D IAPX CONTROLLED AVALANCHE RECTIFIER DIODE Double-diffused glass passivated rectifier diode in hermetically sealed axial-leaded glass envelope capable o f absorbing reverse transients, intended fo r rectifier applications in colour television circuits
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bbS3T31
003bi4fl5
BY527
7Z88032
jtp 7n
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Untitled
Abstract: No abstract text available
Text: 7 TH IS DRAWING IS U N P U B LIS H E D . IT U COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC AA A LL RIGHTS RESERVED. MECHANICAL: D IS T R E V IS IO N S 22 P D ESC R IPTIO N G G1 A DATE DWN 12SEPT05 REV PER ECO—0 5 —0 0 6 5 7 3
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12SEPT05
15JAN10
C26800
us021428
12SEP05
L2002
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Untitled
Abstract: No abstract text available
Text: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven
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uPA1911
D13455EJ1V0DS00
PA1911
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SK2846 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2 S K2 846 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2 APPLICATIONS
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2SK2846
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Untitled
Abstract: No abstract text available
Text: r n COPYRIGHT BY TRP CONNECTOR ALL RIGHTS RESERVED. E MECHANICAL: 23 A P R 2 D 1 3 LOGO CHANGE JC KZ M A T ERIA LS; 1 -HOUSING - TH ERM O PLASTIC PET PO L Y E S T E R FLA M M A B ILIT Y RATING UL 9 4V -0 . -SH IE L D - .010" THICK, C26BOO B R A S S P R E P LA T E D WITH BO^ilNCH MIN SEM I-BRIG H T NICKEL.
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C26BOO
50nlNCH
1000pF,
1/16W
MAG45
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Untitled
Abstract: No abstract text available
Text: r n 1 THIS DRAWN} S UNPUBUSHEO. RELEASED FOR PUBLICATION 01ST J-a ll m h i s « s « v«>. M BY TICO ELECTROMCS CORPORATION. R E V IS IO N S 22 c MECHANICAL: QL TX 0 3 JU L 2 0 0 8 R EV P E R EC O —0 8 —0 1 7 7 2 5 NOTES /l\ MATERIALS HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 9AV-0
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C26800
31MAR2000
13JAN0S
1/16W,
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Untitled
Abstract: No abstract text available
Text: r n THIS bfwmnb g UNftJ6L&HE6T~ RELEASED FM PU6U6ATIM— COPYWOHT - _ BY TYCO WST ~ ALL RIGHTS RESERVED. M MECHANICAL: 22 B X I— .100 .035 TYP 2 -O a o _> o 3 Ol .625 - p .6+5 1 \ o A RJA5 JACK CAVITY CONFORMS TO FCC RULES AND REGULATIONS PART 68, SUB
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03JUL2008
cD100kHz,
100MHz
30MHz
18-20LOG
60MHz
80MHz
MAG45
3HMR2000
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MC 931 transistor
Abstract: S7N03
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M M S F7N 03H D Medium Power Surface Mount Products M o to ro la P re fe rre d D e v ic e TMOS Single N-Channel Field Effect Transistors M iniM O S'" devices are an advanced series of power MOSFETs
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SF7N03HD
0E-05
0E-01
MC 931 transistor
S7N03
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F7N02Z
Abstract: D7N02
Text: MOTOROLA Order this document by MMDF7N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 7N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel w ith Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET 7.0 AMPERES
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MMDF7N02Z/D
F7N02Z
D7N02
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