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    DIODE MARKING 53 Search Results

    DIODE MARKING 53 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING 53 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    Untitled

    Abstract: No abstract text available
    Text: 300mAmps Surface Mount Fast Switching Diode Mechanical Dimension BAV16WS Description SOD-323 MARKING: T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit 100 V 75 V VR RMS 53 V Forward Continuous Current


    Original     		PDF 300mAmps BAV16WS OD-323 150mA

    Q62702-B0825

    Abstract: No abstract text available
    Text: BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration


    Original     		PDF 3-03W Q62702-B0825 OD-323 Sep-11-1996 Q62702-B0825

    B824 transistor

    Abstract: transistor B824 B824 Q62702-B824
    Text: BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53


    Original     		PDF Q62702-B824 OT-23 Feb-04-1997 B824 transistor transistor B824 B824 Q62702-B824

    1N4148WS

    Abstract: No abstract text available
    Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C


    Original     		PDF 1N4148WS= 1N4148WS

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)


    Original     		PDF VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)


    Original     		PDF VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    VBUS05L1-DD1-G-08

    Abstract: No abstract text available
    Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking


    Original     		PDF VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VBUS05L1-DD1-G-08

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)


    Original     		PDF VBUS051BD-HD1 LLP1006-2L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)


    Original     		PDF VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking


    Original     		PDF VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    ves05991

    Abstract: SCD-80
    Text: BBY 53-02W Silicon Tuning Diode • High Q hyperabrupt tuning diode 2 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Pin Configuration Package BBY 53-02W


    Original     		PDF 3-02W VES05991 SCD-80 Mar-23-1999 ves05991 SCD-80

    Untitled

    Abstract: No abstract text available
    Text: BBY 53-03W Silicon Tuning Diode 2 • High Q hyperabrupt tuning diode 1 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage VPS05176 Type Marking Pin Configuration Package BBY 53-03W


    Original     		PDF 3-03W VPS05176 OD-323 Oct-05-1999

    Q62702-B0862

    Abstract: diode T3 Marking diode marking AU
    Text: BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation 2 for VCO’s in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Ordering Code


    Original     		PDF 3-02W VES05991 Q62702-B0862 SCD-80 Q62702-B0862 diode T3 Marking diode marking AU

    sot143 marking code u1s

    Abstract: No abstract text available
    Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip BGX50A " ! , ! , " , ,   Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


    Original     		PDF BGX50A. BGX50A OT143 sot143 marking code u1s

    BAS16W

    Abstract: MMBD4148W
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4148W/BAS16W SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OT-323 MMBD4148W/BAS16W OT-323 150mA MMBD4148W /BAS16W BAS16W

    ka2 DIODE

    Abstract: BAS16T
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate DIODE MMBD4148T/BAS16T SWITCHING DIODE SOT-523 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking MMBD4148T: KA2, BAS16T:A2


    Original     		PDF OT-523 MMBD4148T/BAS16T OT-523 MMBD4148T: BAS16T 150mA MMBD4148T /BAS16T ka2 DIODE

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code


    Original     		PDF VBUS051BD-HD1 LLP1006-2L AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08

    diode marking 53

    Abstract: marking VB DIODE
    Text: SIEMENS BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-B824 OT-23 diode marking 53 marking VB DIODE

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code BBY 53-03W


    OCR Scan     		PDF 3-03W Q62702-B0825 OD-323 235b05 flE35bG5 1204C fl535bQ5

    diode T3 Marking

    Abstract: maxim CODE TOP MARKING diode marking code maxim
    Text: SIEMENS BBY 53-03W Silicon Tuning Diode Prelim inary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking O rdering Code Pin Configuration


    OCR Scan     		PDF 3-03W Q62702-B825 OD-323 diode T3 Marking maxim CODE TOP MARKING diode marking code maxim

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 3-02W Q62702-B0862 SCD-80

    Q62702B

    Abstract: marking L
    Text: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 3-02W Q62702-B0862 SCD-80 Q62702B marking L