DIODE MARKING 4C Search Results
DIODE MARKING 4C Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 | |
C405
Abstract: CMPSH05-4C
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CMPSH05-4C OT-23F CMPSH05-4C 100mA 500mA 14-September C405 | |
MMBD501
Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
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OCR Scan |
OT-23 OT-23 MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD501 MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MBAS16 | |
G098PU25WContextual Info: G098PU25W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 5 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking |
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G098PU25W G098PU25W | |
G098PU322WContextual Info: G098PU322W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 22 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking |
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G098PU322W G098PU322W | |
G098PU312WContextual Info: G098PU312W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 12 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking |
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G098PU312W G098PU312W | |
CCD GFT
Abstract: ERD31 SS53 40114 JD51
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OCR Scan |
ERD31 CCD GFT ERD31 SS53 40114 JD51 | |
DIODE SCHOTTKY 40V 500MA
Abstract: C405 CMPSH05-4C DIODE 4C
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CMPSH05-4C CMPSH05-4C OT-23F 100mA 500mA 27-January DIODE SCHOTTKY 40V 500MA C405 DIODE 4C | |
Contextual Info: CMPSH05-4C SURFACE MOUNT DUAL, COMMON CATHODE HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH05-4C is a Dual, Common Cathode HIGH CURRENT, LOW VF 40 volt Schottky Diode pair packaged in a space saving |
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CMPSH05-4C CMPSH05-4C OT-23F 500mA 100mA 27-January | |
marking code C4s
Abstract: marking code 4A 305 MARKING CODE MARKING 4a MARKING CODE VF schottky marking code PD transistor C4C k DIODE MARKING CODE F1 4a marking common anode schottky power
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OT-523 100mA 31-January marking code C4s marking code 4A 305 MARKING CODE MARKING 4a MARKING CODE VF schottky marking code PD transistor C4C k DIODE MARKING CODE F1 4a marking common anode schottky power | |
marking code C4s
Abstract: 330 marking diode marking code 4A MARKING CODE VF marking code 535 DUAL SURFACE MOUNT DIODE
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OT-523 marking code C4s 330 marking diode marking code 4A MARKING CODE VF marking code 535 DUAL SURFACE MOUNT DIODE | |
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Contextual Info: CMUSH2-4 CMUSH2-4A CMUSH2-4C CMUSH2-4S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSH2-4 series types are silicon Schottky diodes, epoxy molded in a ULTRAmini SOT-523 surface mount package, |
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OT-523 100mA | |
CMLSH2-4LC
Abstract: PA CMLSH2-4LC
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OT-563 200mA OT-563 21x9x9 27x9x17 20x18x5 23x23x13 23x23x23 CMLSH2-4LC PA CMLSH2-4LC | |
Contextual Info: VS-4CSH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specific for output and snubber operation |
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VS-4CSH02-M3 J-STD-020, O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-4CSH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation |
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VS-4CSH01-M3 J-STD-020, O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-4CSH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specific for output and snubber operation |
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VS-4CSH02-M3 J-STD-020, O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-4CSH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation |
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VS-4CSH01-M3 J-STD-020, O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-4CSH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K K Anode 1 Cathode Anode 2 • Specified for output and snubber operation |
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VS-4CSH01HM3 J-STD-020, O-277A AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-4CSH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation |
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VS-4CSH02HM3 J-STD-020, O-277A AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-4CSH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specific for output and snubber operation |
Original |
VS-4CSH02-M3 J-STD-020, O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-4CSH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation |
Original |
VS-4CSH02HM3 J-STD-020, O-277A AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |