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    DIODE MARKING 1200 Search Results

    DIODE MARKING 1200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING 1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS19LT1

    Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
    Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol


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    PDF BAS19LT1, BAS20LT1, BAS21LT1 BAS19LT1 BAS20LT1 BAS19 BAS20 BAS21 r14525 BAS19LT1 sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel


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    PDF LBAS21HT1G 3000/Tape LBAS21HT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21SLT1G 3 FETURE • We declare that the material of product 1 compliance with RoHS requirements. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping LBAS21SLT1G


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    PDF LBAS21SLT1G 236AB) 3000/Tape LBAS21SLT3G 10000/Tape OT-23

    LBAS21SLT1G

    Abstract: JT MARKING JT MARKING SOT-23
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21SLT1G 3 FETURE • We declare that the material of product 1 compliance with RoHS requirements. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 Shipping LBAS21SLT1G JT 3000/Tape&Reel


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    PDF LBAS21SLT1G 3000/Tape LBAS21SLT3G 10000/Tape OT-23 LBAS21SLT1G JT MARKING JT MARKING SOT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21SLT1G FEATURE 3 • We declare that the material of product 1 compliance with RoHS requirements. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 Shipping LBAS21SLT1G JT 3000/Tape&Reel


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    PDF LBAS21SLT1G 3000/Tape LBAS21SLT3G 10000/Tape OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21CLT1G FEATURE 3 • We declare that the material of product 1 compliance with RoHS requirements. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 Shipping LBAS21CLT1G JU 3000/Tape&Reel


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    PDF LBAS21CLT1G 3000/Tape LBAS21CLT3G 10000/Tape OT-23

    1N4148WS

    Abstract: No abstract text available
    Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C


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    PDF 1N4148WS= 1N4148WS

    3vf4

    Abstract: No abstract text available
    Text: RECTRON BAV99 SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE FEATURES Silicon epitaxial planar diode Fast switching Surface mounting device "A7" Device marking .020 0.50 .070 (1.78) * Weight : apporx. 0.008g .110 (2.80) .081 (2.04) .119 (3.04)


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    PDF BAV99 OT-23 150mA 100uA 3vf4

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes DAN217U SOT-323 SWITCHING DIODE FEATURES z Small surface mounting type. z Two diode elements are connected in series MARKING: A7 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃


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    PDF OT-323 DAN217U OT-323 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes DAN217U SOT-323 SWITCHING DIODE FEATURES z Small surface mounting type. z Two diode elements are connected in series MARKING: A7 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃


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    PDF OT-323 DAN217U OT-323 100mA

    MARKING KE2

    Abstract: No abstract text available
    Text: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A C1 KXX Mechanical Data • · · · · A1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2


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    PDF MMBZ5221BS MMBZ5259BS 200mW OT-363 OT-363, MIL-STD-202, DS31039 MARKING KE2

    MMBZ5221BS

    Abstract: MMBZ5223BS MMBZ5225BS MMBZ5226BS MMBZ5227BS MMBZ5228BS MMBZ5229BS MMBZ5259BS KE2 diode ZENER A2.2
    Text: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A A1 KXX Mechanical Data • · · · · C1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2


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    PDF MMBZ5221BS MMBZ5259BS 200mW OT-363 OT-363, MIL-STD-202, MMBZ5257BS MMBZ5258BS DS31039 MMBZ5223BS MMBZ5225BS MMBZ5226BS MMBZ5227BS MMBZ5228BS MMBZ5229BS MMBZ5259BS KE2 diode ZENER A2.2

    E72873

    Abstract: VUB116-16NOXT
    Text: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product


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    PDF 116-16NOXT VUB116-16NOXT E72873 20110907b E72873 VUB116-16NOXT

    MARKING JS sot-23

    Abstract: BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE


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    PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A MARKING JS sot-23 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G

    diode MARKING CODE jx

    Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE


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    PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A diode MARKING CODE jx sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf

    Js MARKING CODE SOT23

    Abstract: No abstract text available
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE


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    PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A Js MARKING CODE SOT23

    JS SOT23-3

    Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A


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    PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A JS SOT23-3 sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23

    Untitled

    Abstract: No abstract text available
    Text: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage 250 Vdc Repetitive Peak Reverse Voltage 250


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    PDF BAS21HT1 OD-323 BAS21HT1/D

    Untitled

    Abstract: No abstract text available
    Text: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! ,  ! ,  ,  ,  Type Package Configuration Marking BAV222


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    PDF BAV222 BAW222 OT416) BAV222 50/60Hz, BAV222, BAW222,

    SC371-10A

    Abstract: TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A
    Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 1.35 ± 0.4 Surface-mount device Low VF 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 5.1 Super high speed switching Marking


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    PDF SC371-10A SC371-10A TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A

    DIODE UF marking code

    Abstract: marking code js sod323 diode UF 2004
    Text: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage 250 Vdc Repetitive Peak Reverse Voltage 250


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    PDF BAS21HT1 OD-323 DIODE UF marking code marking code js sod323 diode UF 2004

    TL130

    Abstract: SC371-10A 02 MARKING diode 1000V 0.5a
    Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features 1.35 ± 0.4 Surface-mount device Low VF + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking


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    PDF SC371-10A TL130 SC371-10A 02 MARKING diode 1000V 0.5a

    Untitled

    Abstract: No abstract text available
    Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 1.35 ± 0.4 Surface-mount device Low VF 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking


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    PDF SC371-10A et1000

    BAS19LT1G

    Abstract: Diode SOT-23 marking Js marking 88A MF sot-23 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 sot-23 MARKING CODE JS
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features • Pb−Free Packages are Available


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    PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 BAS19 BAS19LT1G Diode SOT-23 marking Js marking 88A MF sot-23 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 sot-23 MARKING CODE JS