MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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CA3039
Abstract: DIODE m14 CA30 CA3039M CA3039M96
Text: [ /Title CA30 39 /Subject (Diode Array) /Autho r () /Keywords (Intersil Corporation, Semiconductor, six, diode array, matche d diodes, 5V reverse breakdown, 25ma, low capaci tance, fast recovery time, matche d voltage drop, military CA3039 T UCT ROD ACEMEN SIL
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CA3039
CA3039
DIODE m14
CA30
CA3039M
CA3039M96
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M1494NC
Abstract: M1494NC250 M1494 WESTCODE D-68623 m1494nc160
Text: Soft Recovery Diode M1494NC160 to M1494NC250 The data sheet on the subsequent pages of this document is a scanned copy of existing data for this product. Rating Report 82NR8 Issue 3 This data reflects the old part number for this product which is: SW16-25CXC924. This part
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M1494NC160
M1494NC250
82NR8
SW16-25CXC924.
M1494NC
M1494NC250
M1494
WESTCODE
D-68623
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CA3039
Abstract: pa 3029 b CA3039M CA3039M96 CD 07
Text: CA3039 Diode Array November 1996 Features Description • Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit construction assures excellent static and dynamic matching
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CA3039
CA3039
pa 3029 b
CA3039M
CA3039M96
CD 07
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active crossover
Abstract: WE MIDCOM 8 lead soic-n package (R8) woofer amp circuit diagram AD8531 AD8532 AD8534 SOIC-14 High Speed Amplifiers msop-8 Branding M1
Text: Low Cost, 250 mA Output Single-Supply Amplifiers AD8531/AD8532/AD8534 Multimedia audio LCD driver ASIC input or output amplifier Headphone driver The very low input bias currents enable the AD853x to be used for integrators, diode amplification, and other applications
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AD8531/AD8532/AD8534
AD853x
OT-23
AD8534ARU
AD8534ARU-REEL
AD8534ARUZ1
AD8534ARUZ-REEL1
14-Lead
active crossover
WE MIDCOM
8 lead soic-n package (R8)
woofer amp circuit diagram
AD8531
AD8532
AD8534
SOIC-14
High Speed Amplifiers
msop-8 Branding M1
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LX27
Abstract: H11M1
Text: LX2750 SINGLE INPUT SUPPLY PWM CONTROLLER WITH LDO CONTROLLER PRODUCTION DATA SHEET Pb Free Product FEATURES DESCRIPTION Single Input 12V Bus Voltage Excellent Dynamic Response with Selectable Feedforward Voltage Mode Control or Constant On Time Control Diode Emulation Mode Available
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LX2750
LX2750
203REF
50BSC
008REF
059REF
LX27
H11M1
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CD4007CN
Abstract: CD4007C CD4007CM M14A MS-001 N14A
Text: Revised January 1999 CD4007C Dual Complementary Pair Plus Inverter General Description The CD4007C consists of three complementary pairs of Nand P-channel enhancement mode MOS transistors suitable for series/shunt applications. All inputs are protected from static discharge by diode clamps to VDD and VSS.
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CD4007C
CD4007C
CD4007CM
14-Lead
MS-120,
CD4007CN
CD4007CN
CD4007CM
M14A
MS-001
N14A
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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SD965
Abstract: J13003 sd965 transistor j13003 TRANSISTOR BC846 SOT-23 EBC J31C Transistor J31C J127 mosfet J42C SC4242
Text: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor
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OD-723
OD-523
OD-323
O-252
OT-23-6
OT-523
OT-323
OT-23
OT-323
SD965
J13003
sd965 transistor
j13003 TRANSISTOR
BC846 SOT-23 EBC
J31C Transistor
J31C
J127 mosfet
J42C
SC4242
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: SKM 145 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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M14A
Abstract: MM88C29 MM88C29N MM88C30 MM88C30M MM88C30N MS-001 N14A DUAL Differential Line DRIVER
Text: Revised June 2001 MM88C29 • MM88C30 Quad Single-Ended Line Driver • Dual Differential Line Driver General Description The MM88C30 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. The absence of a clamp diode to VCC in the input
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MM88C29
MM88C30
MM88C30
MM88C29
M14A
MM88C29N
MM88C30M
MM88C30N
MS-001
N14A
DUAL Differential Line DRIVER
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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MTX70A
Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
Text: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35
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3s300A
ZG50HFL120C1S
SKM75GB128DN
BSM50GB120DLC
ZG75HFL120C1S
SKM100GB128DN
BSM75GB120DLC
ZG100HFL120C1S
SKM145GB128DN
BSM100GB120DLCK
MTX70A
FF300R12KS4
MOTOR SOFT START
MDS100
mfq 60A
bridge rectifier SSC
AC welder IGBT circuit
ZG300HFL120C2S
3phase bridge diode mds 60
SKM200GB125DN
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Untitled
Abstract: No abstract text available
Text: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS REFLECTIVE SP4T DIODE SWITCH MODEL SWM-1400 0.5-18.0 GHz GENERAL INFORMATION The Model SWM-1400 SP4T PIN Diode switch operates over the full fre quency range 0.5-18.0 GHz in a single unit. KDI/Triangle has integrated
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SWM-1400
lt-STD-883.
SWM-1400
M-1400
50GHz
000GH?
400GH^
000GHz
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Untitled
Abstract: No abstract text available
Text: CA3039 Semiconductor Diode Array November 1996 Features Description • Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit construction assures excellent static and dynamic matching
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CA3039
CA3039
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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74HCT74N
Abstract: No abstract text available
Text: Revised January 1999 EMICQNDUCTGR tm MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. The M M 74H C T74 utilizes advanced silicon-gate CM OS
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MM74HCT74
74HCT74N
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WOIM
Abstract: SD W1p ET375 SC-65 T460
Text: ET375 • g ± s ir j- \ . = 7 'S Ì > X 9 NPN = *te iJ & U - 1 -» TRIPLE D IFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING £W /± , ; Features • SffiiJE High voltage • ¡fiElffStt High reliability Including free wheeling diode
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ET375
lir15
I95t/R89
WOIM
SD W1p
ET375
SC-65
T460
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MM74C00
Abstract: MM74C02
Text: Revised January 1999 EMICQNDUCTGR tm MM74C00 • MM74C02 • MM74C04 Quad 2-Input NAND Gate • Quad 2-Input NOR Gate • Hex Inverter All inputs are protected from damage due to static dis charge by diode clamps to V q q and G N D . General Description
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MM74C00
MM74C02
MM74C04
MM74C00,
MM74C02,
MM74C00
MM74C02
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74hc32m
Abstract: No abstract text available
Text: „ r Revised February 1999 SEMICONDUCTOR TM MM74HC32 Quad 2-Input OR Gate General Description All inputs are protected from dam age due to static dis charge by internal diode clam ps to V qq and ground. The MM 74H C 32 OR gates utilize advanced silicon-gate
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MM74HC32
74hc32m
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74hc86s
Abstract: mm74hc86a
Text: Revised February 1999 SEMICONDUCTOR TM MM74HC86 Quad 2-Input Exclusive OR Gate inputs are protected from dam age due to static discharge by internal diode clam ps to V qq and ground. General Description The M M 74H C 86 EXC LU SIVE O R gate utilizes advanced
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MM74HC86
74hc86s
mm74hc86a
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74HC00N
Abstract: IC 74HC00N 74hc00 fan-out MM74HC00M 74HC00M
Text: „ r Revised February 1999 SEMICONDUCTOR TM MM74HC00 Quad 2-Input NAND Gate static discharge by internal diode clam ps to Vc c and General Description The M M 74HC00 NAND gates utilize advanced silicon-gate C M OS tech n olo gy to achieve operating speeds sim ilar to
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MM74HC00
74HC00
74HC00N
IC 74HC00N
74hc00 fan-out
MM74HC00M
74HC00M
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CA3039
Abstract: 120 A diode
Text: m H A R R IS U U CA3039 S E M I C O N D U C T O R Diode Array November 1996 Description Features • Six Matched Diodes on a Com mon Substrate • Excellent Reverse Recovery T im e . 1ns Typ • Vp Match . 5mV (Max)
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CA3039
CA3039
120 A diode
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