DIODE LE 78A Search Results

tic 223

Abstract: A912 hs sot223 A9-13 1ps sot UM 78A
Contextual Info: B A S 78A. B A S 78D Silicon Switching Diodes • Switching applications • High breakdow n voltage T ype M a rkin g O rd e rin g c o d e 1 2 -m m ta p e Package* BAS78A BAS78A Q62702 - A910 SOT-223 BAS78B BAS78B Q62702 - A 9 1 1 SOT-223 BAS78C BAS78C

TRANSISTOR SMD 9bb

Abstract: TI 42A
Contextual Info: In te rn a tio n a l TOR Rectifier PD - 9.1627 IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,

Contextual Info: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,

IRG4PC50FD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20

IRG4PC50FD

Abstract: diode 10a 400v CC
Contextual Info: PD 9.1469A IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC50KD

Contextual Info: International IÖR Rectifier PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc =1 Ofis, @360V VCE start , T j= 1 2 5 ° C ,

Contextual Info: International lo g Rectifier HEXFET Power MOSFET • • • • • • • 4855452 PD-9.754 Q 01S454 318 H I N R IRFP064 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance

Contextual Info: PD - 91729 International I R Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10 as, VCc = 7 2 0 V , T j = 125°C,

Contextual Info: PD -91688A In terna tional I O R Rectifier IRG4PSH71KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins

Contextual Info: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins

IRG4PSH71KD

Abstract: GE 84A Diode LT 410 diode lt 247
Contextual Info: PD - 91688 PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

lt 39 diode smd

Abstract: smd diode 78a IRG4ZH71KD
Contextual Info: PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C,

DIODE marking 7BA

Abstract: sg 7ba silent relay H3 marking CSA22 diode marking code H5 relay low profile
Contextual Info: cP r ilT C T I THE p o s s i b i l i t i e s « he i nfi ni te JSILENT POWER RELAY 1 POLE—10 A LOW PROFILE TYPE IFTR-H3 SERIES • FEATURES • Pin co m p a tib le w ith w id e ly used V S and FTR -H1 series p o w e r relays • U ltra sile n t relay w ith pa tented un iq ue U -sh ap e spring. N oise

transistor IRG4BC10UD

Abstract: IRG4BC10UD
Contextual Info: PD -9.1677A International TOR Rectifier IRG4BC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT F ea tu re s • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode

251f

Abstract: hexfet power mosfets international rectifier UJ 78A DIODE marking CJSS IOR9246 IRF1010 IRL1004
Contextual Info: PD - 91702B International IGR Rectifier IRL1004 HEXFET Power MOSFET • • • • • • • Logic-Level G ate Drive A dvanced Process Technology Ultra Low O n-R esistance Dynam ic dv/dt Rating 175 °C O perating Tem perature Fast Switching Fully Avalanche Rated

irf 2030 n

Abstract: irf 2030 IRF 545 IRFP064V
Contextual Info: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ

TO-247AC Package

Abstract: IRFP064V irf 2030
Contextual Info: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ

IRG4PSH71KD

Contextual Info: PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

Contextual Info: PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

gFE smd diode

Abstract: smd transistor 18E irg4zh70ud SMD-10 PACKAGE diode smd 312
Contextual Info: PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● ● ● ● UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in

IRL1004

Contextual Info: PD - 91702A IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 40V RDS on = 0.0065W

IRF1407

Abstract: 130AV
Contextual Info: PD - 93907 IRF1407 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

Alternator regulator

Abstract: irf1407 DIODE marking 78A 60v 10KHz ir MOSFET
Contextual Info: PD - 93907 IRF1407 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

Contextual Info: PD - 93907 IRF1407 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating