KE DIODE ON
Abstract: diode KE KE-01 diode KE 01
Text: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations
|
Original
|
PDF
|
|
diode KE
Abstract: 274 transistor KE-01 diode KE 01 DATASHEET SCR ke on module scr scr datasheet igbt scr applications
Text: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations
|
Original
|
PDF
|
|
C10X
Abstract: No abstract text available
Text: SKN 26 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 X22 [22 0C22 0X22 3 X22 [22 0C22 0X22 =HM3 V CR M A 6:Z 0[2 ¥] ;7 V 022 ¥OI >BG C1^2X >B$ C1^2X >BG C1^2[ >B$ C1^2[ >BG C1^0C >B$ C1^0C >BG C1^0X >B$ C1^0X 0122 0122 >BG C1^01 SKR 26
|
Original
|
PDF
|
|
kuka
Abstract: kd202 GEZ DIODE D5014 KA206 KA204 THY H 75 B 80 GEZ 44 A diode T5726 KE02
Text: kuka-2006-de-inhalt.qxd 07.02.2006 12:17 Uhr Seite 70 Outlines Heatsinks May 2006 01 K 1.1 - M 12 G = 0,635 kg K 0.55 - FB 54 - A G = 1,760 kg K0.55 - M 12 K0.55 - M 24 x 1,5 G = 1,760 kg G = 1,760 kg 113 11 15 M8 39 135 135 2 39 2 100 96 1 25 120 50 M24x1.5
|
Original
|
PDF
|
kuka-2006-de-inhalt
M24x1
150mm
120mm
kuka
kd202
GEZ DIODE
D5014
KA206
KA204
THY H 75 B 80
GEZ 44 A diode
T5726
KE02
|
Untitled
Abstract: No abstract text available
Text: SK 50 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=> . 01 23 . 01 2 IGBT Module SK 50 MLI 066 899 4 1; $ . ;9 2 <1 $ :99 $ ? 09 4 !=>. 0 ! 4 . 89 4@ 4"5 A 09 4@ 45, B 899 4 Units
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SK 50 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=> . 01 23 . 01 2 899 4 1; $ . ;9 2 <1 $ :99 $ ? 09 4 !=>. 0 ! 4 . 89 4@ 4"5 A 09 4@ 45, B 899 4 Units . 01 2 4"5, SEMITOP 3
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SK 50 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=> . 01 23 . 01 2 899 4 1; $ . ;9 2 <1 $ :99 $ ? 09 4 !=>. 0 ! IGBT Module SK 50 MLI 066 4 . 89 4@ 4"5 A 09 4@ 45, B 899 4 Units
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D034BB2-0120 Product Details Military/Aerospace High Performance Relays
|
Original
|
PDF
|
B07D034BB2-0120
B07D034BB2-0120
M5757
|
Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D934BB2-0119 Product Details Military/Aerospace High Performance Relays
|
Original
|
PDF
|
B07D934BB2-0119
B07D934BB2-0119
M5757
|
Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D992BE2-0132 Product Details Military/Aerospace High Performance Relays
|
Original
|
PDF
|
B07D992BE2-0132
B07D992BE2-0132
M5757
|
Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D992BD2-0127 Product Details Military/Aerospace High Performance Relays
|
Original
|
PDF
|
B07D992BD2-0127
B07D992BD2-0127
M5757/23-017
|
A26 diode
Abstract: 4709N 4709 KE-01
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
|
Original
|
PDF
|
A26/00
A26 diode
4709N
4709
KE-01
|
Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D034BA2-0125 Product Details Military/Aerospace High Performance Relays
|
Original
|
PDF
|
B07D034BA2-0125
B07D034BA2-0125
M5757
|
A26 diode
Abstract: SD-50 Rectifier Diode
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
|
Original
|
PDF
|
A26/00
A26/00
A26 diode
SD-50 Rectifier Diode
|
|
4709
Abstract: KE-01 8000D
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
|
Original
|
PDF
|
|
A26 diode
Abstract: 4709N
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
|
Original
|
PDF
|
|
A26 diode
Abstract: diode A26
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
|
Original
|
PDF
|
|
VRE405
Abstract: VRE405AD VRE405AS VRE405BD VRE405BS VRE405CD VRE405CS
Text: VRE405 VRE405 P r o d u c t IInnnnoovvaa t i o n FFr roomm Precision Dual Voltage Reference Features DESCRIPTION The VRE405 is a low cost, high precision, ±5 V reference. Available in 14-pin DIP or SMT packages, the device is ideal for new designs that need a high performance reference.
|
Original
|
PDF
|
VRE405
VRE405
14-pin
1-10hz)
VRE405DS
VRE405AD
VRE405AS
VRE405BD
VRE405BS
VRE405CD
VRE405CS
|
display 1620
Abstract: digital TUNING FM RADIO RECEIVER single phase automatic change diagram Seven Transistor Array PNP TUNING FM RADIO RECEIVER LED display 7 segment FIP6E6 FM receiver integrated circuit automatic tune am radio station block diagram pj 899 diode
Text: MOS DIGITAL INTEGRATED CIRCUIT jut P D 1 7 0 3 C -0 1 3 P H A S E L O C K E D L O O P F R E Q U E N C Y S Y N T H E S IZ E R F M /A M D IG IT A L T U N IN G S Y S T E M C O N T R O L L E R C M O S LSI T he jjP D 1 7 03 C -013 is a single c h ip CM O S c o n tro lle r designed fo r using as a Phase Lo cked L o o p
|
OCR Scan
|
PDF
|
|
IR Emitters
Abstract: No abstract text available
Text: OD-880F HIGH-POWER GaAIAs IR EMITTERS .030 .040 FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880 nm peak emission for optimum matching with silicon detectors .015 1.00 MIN. " f
|
OCR Scan
|
PDF
|
OD-880F
OD-88O-C
OD-88OF
IR Emitters
|
pj 899 diode
Abstract: UPD6320G MPD6321 UPD6321G PD6320G 701-c iPD6321 UPB553AC UPD6321 JUPD6320G
Text: M O S INTEGRATED C IR C U IT ju P D 1 7 0 1 C - 0 1 5 PLL F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R FO R F M A N D A M R A D IO The /JPD1701C-015 is a CMOS LSI w ith b u ilt-in PLL synthesizer capable of receiving F M /A M in U.S.A. and
|
OCR Scan
|
PDF
|
uPD1701C-015
pPB553AC)
PB553AC
juPD6320G
PD6321
pj 899 diode
UPD6320G
MPD6321
UPD6321G
PD6320G
701-c
iPD6321
UPB553AC
UPD6321
|
st 339
Abstract: st339 diode 937 ke SLOTTED OPTICAL SWITCH for C3 937 ke ST1131-11 KE 34A
Text: SLOTTED OPTICAL SWITCH op fiE L tm yics H21A1/2/3 SVM BQi MiUIMETERS MAX. MIN. •D 1 - S I ±y _ ^ 3 *1 SECTION X - X~T~ LEAD PROFILE ST?339*01 INCHES MIN, A W .7 11.0 ,422 433 A- 3.0 a? 119 .125 At 3.0 32 .113 125 <8*> b, .SCO .750 .50 NOM. .024 ,030
|
OCR Scan
|
PDF
|
H21A1/2/3
St113C-11
ST1133-11
ST1131-11
ST1132-11
st 339
st339
diode 937 ke
SLOTTED OPTICAL SWITCH for C3
937 ke
ST1131-11
KE 34A
|
Untitled
Abstract: No abstract text available
Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
|
OCR Scan
|
PDF
|
SEP8506
SDP8406
SDP8106
SDP8000/8600
SEP8506
|
H0A1882
Abstract: A1882
Text: H0A1882 Transmissive Sensor DESCRIPTION The HOA1882 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1882-011, -012 or photodarlington (HOA1882-013) encased in a black IR transmissive thermoplastic housing. Detector switching takes place
|
OCR Scan
|
PDF
|
H0A1882
HOA1882
HOA1882-011,
HOA1882-013)
SEP8506/8706,
SDP8406,
SDP8106.
H0A1882
A1882
|