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    DIODE K420 Search Results

    DIODE K420 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE K420 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k540

    Abstract: No abstract text available
    Text: Sumitomo Electric Industries, Ltd. Part No. : SLT544A-xxA Series Document No. : HUW0825015-01A Date of issue : Nov. 21 2008 Preliminary Preliminary Specification of 1.5 m Tunable Laser Diode Module SLT544A-xxA Series RoHS Compliant Sumitomo Electric Industries, Ltd.


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    PDF SLT544A-xxA HUW0825015-01A 100GHz HUW0825015-01A k540

    thermistor k275

    Abstract: J955 k365 IC K520 K615 k620 k275 k245 transistor F370 k355
    Text: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xA Series Document No. : HUW0025006-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 10mW ~ SLT548x-xA Series


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    PDF SLT548x-xA HUW0025006-01C 50GHz IRO-D01002 July/26/2001 thermistor k275 J955 k365 IC K520 K615 k620 k275 k245 transistor F370 k355

    k540

    Abstract: tunable laser diode slt5446 Diode k420
    Text: Sumitomo Electric Industries, Ltd. Part No. : SLT5446-xxA Series Document No. : HUW0425035-01A Date of issue : Jan. 10th, 2005 Preliminary Technical Specification of 1.5µm Tunable Laser Diode Module SLT5446-xxA Series Sumitomo Electric Industries, Ltd. 1/8


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    PDF SLT5446-xxA HUW0425035-01A 100GHz k540 tunable laser diode slt5446 Diode k420

    thermistor k275

    Abstract: k355 k185 J955 k535 J780 J945 J965 K195 k540
    Text: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xB Series Document No. : HUW0025007-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 20mW ~ SLT548x-xB Series


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    PDF SLT548x-xB HUW0025007-01C 50GHz IRO-D01002 July/2/2001 thermistor k275 k355 k185 J955 k535 J780 J945 J965 K195 k540

    V23990-K420-A60-PM

    Abstract: No abstract text available
    Text: V23990-K420-A60-PM target datasheet MiniSKiiP 3 PIM 1200V/100A Features MiniSKiiP® 3 housing ● Solderless interconnection ● Mitsubishi Generation 6.1 technology Target Applications Schematic ● Industrial Motor Drives Types ● V23990-K420-A60-PM Maximum Ratings


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    PDF V23990-K420-A60-PM 200V/100A V23990-K420-A60-PM

    V23990-K420-A40-PM

    Abstract: No abstract text available
    Text: V23990-K420-A40-PM MiniSKiiP 3 PIM 1200V/100A MiniSKiiP® 3 housing Features ● Solderless interconnection ● Trench Fieldstop IGBT4 technology Target Applications Schematic ● Industrial Motor Drives Types ● V23990-K420-A40-PM Maximum Ratings Tj=25°C, unless otherwise specified


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    PDF V23990-K420-A40-PM 200V/100A V23990-K420-A40-PM

    k4202

    Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)


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    PDF 2SK4202 2SK4202 2SK4202-S19-AY O-220 k4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS

    K4201

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)


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    PDF 2SK4201 2SK4201 2SK4201-S19-AY O-220 K4201

    2SK4201

    Abstract: 2SK4201-S19 2SK42
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)


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    PDF 2SK4201 2SK4201 2SK4201-S19-AY O-220 2SK4201-S19 2SK42

    2sk4202

    Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)


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    PDF 2SK4202 2SK4202 2SK4202-S19-AY O-220 nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42

    2SK4201

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    2SK4201

    Abstract: 2SK4201-S19
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    k4202

    Abstract: 2sk4202 nec k4202 2SK4202-S19-AY K4-20
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Keithley

    Abstract: Picoammeters transistor 2611b Keithley s900 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER NONLINEAR MODEL LDMOS keithley 192 Multimeter service manual 1016w AL 2425 dv battery charger schematic diagram apc back-UPS es 550
    Text: 99 Washington Street Melrose, MA 02176 Phone 781-665-1400 Toll Free 1-800-517-8431 www.keithley.com Visit us at www.TestEquipmentDepot.com research n nanotechnology n semiconductor n wireless n electronic components research n nanotechnology n semiconductor


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    A1516

    Abstract: 2SK4209 A-1516 2SK42 k420
    Text: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.


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    PDF 2SK4209 ENA1516 PW10s, A1516-5/5 A1516 2SK4209 A-1516 2SK42 k420

    A1289

    Abstract: A-1289 A1289-5 2SK42 2SK4203LS 2SK4203 K4203
    Text: 2SK4203LS Ordering number : ENA1289 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4203LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF 2SK4203LS ENA1289 PW10s, A1289-5/5 A1289 A-1289 A1289-5 2SK42 2SK4203LS 2SK4203 K4203

    Untitled

    Abstract: No abstract text available
    Text: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.


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    PDF 2SK4209 ENA1516 A1516-5/5

    2SK4200

    Abstract: K4200 2SK4200LS A13333 A13334 2SK42 A13331 ENA1333
    Text: 2SK4200LS Ordering number : ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4200LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF 2SK4200LS ENA1333 A1333-5/5 2SK4200 K4200 2SK4200LS A13333 A13334 2SK42 A13331 ENA1333

    K4208

    Abstract: 2SK4208 2SK420 2SK42
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ


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    PDF 2002/95/EC) 2SK4208 O-220D-A1 K4208 2SK4208 2SK420 2SK42

    K4208

    Abstract: 2sk4208 2SK420
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ


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    PDF 2002/95/EC) 2SK4208 O-220D-A1 K4208 2sk4208 2SK420

    K4208

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ


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    PDF 2002/95/EC) 2SK4208 O-220D-A1 K4208

    K4207

    Abstract: No abstract text available
    Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SK4207 K4207

    general microwave F9120

    Abstract: DM864B APC UPS es 500 CIRCUIT DIAGRAM 75W HI FI AMPLIFIER DM189CH schematic diagram APC UPS systems DM186CH General Microwave M871, Opt. 4 f9114 APC Back ES 500 UPS circuit diagram
    Text: ^ *L S HwH' 991 GENERAL MICROWAVE lir a GENERAL MICROWAVE GENERAL MICROWAVE COMPONENTS & INSTRUMENTS INFORMATION . Ordering Information 1. Please order by m odel num ber, op tio n num ber where ap­ plicable , and p ro d u c t name. Telephone orders for standard catalog products will be ac­


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    PDF S-162 17--Tlx: general microwave F9120 DM864B APC UPS es 500 CIRCUIT DIAGRAM 75W HI FI AMPLIFIER DM189CH schematic diagram APC UPS systems DM186CH General Microwave M871, Opt. 4 f9114 APC Back ES 500 UPS circuit diagram