HOA0973-P51
Abstract: No abstract text available
Text: Home> Products > Detector > Optoschmitt Sensor > Product Page HOA0973-P51 Order Product and Get Support U.S. Authorized Distributors HOA Series Infrared Opaque Optoschm itt Sensor, Diode Output, Single Mounting Tab, Detector Side, Plastic Package Global Sales & Service
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HOA0973-P51
HOA0973-P51
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HOA0973-L51
Abstract: hoa0973l51
Text: Home> Products > Detector > Optoschmitt Sensor > Product Page HOA0973-L51 Order Product and Get Support U.S. Authorized Distributors HOA Series Infrared Opaque Optoschm itt Sensor, Diode Output, Single Mounting Tab, Em itter Side, Plastic Package Global Sales & Service
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HOA0973-L51
HOA0973-L51
hoa0973l51
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Untitled
Abstract: No abstract text available
Text: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25–5.1 GHz GENERAL INFORMATION SMA FEMALE TYP. ITT CANNON MDB1-9PSP OR EQUIV. KDI/Triangle’s switched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is
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25noseconds
DP-51-1)
DP-21
DP-32
DP-33
DP-36
DP-41
DP-42
DP-44
DP-51
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digital phase shifters
Abstract: cannon power supply DP-21 DP-32 DP-33 DP-36 DP-41 DP-42 DP-44 DP-51
Text: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25–5.1 GHz GENERAL INFORMATION SMA FEMALE TYP. ITT CANNON MDB1-9PSP OR EQUIV. KDI/Triangle’s switched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is
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Untitled
Abstract: No abstract text available
Text: Datasheet Regulator IC Series for Automotive Termination Regulator for DDR-SDRAMs BD35395FJ-M General Description Key Specifications BD35395FJ-M is a termination regulator compatible with JEDEC DDR1/2/3/3L-SDRAM, which functions as a linear
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BD35395FJ-M
BD35395FJ-M
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CM320 200DE
Abstract: DIODE ITT 310 CM320
Text: PRELIMINARY CM3202 DDR VDDQ and VTT Termination Voltage Regulator Features Product Description • The CM3202 is a dual-output low noise linear regulator designed to meet SSTL-2 and SSTL-3 specifications for DDR-SDRAM VDDQ supply and termination voltage VTT supply. With integrated power MOSFET’s, the
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CM3202
500mV
MO-229,
CM320 200DE
DIODE ITT 310
CM320
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Untitled
Abstract: No abstract text available
Text: Datasheet 1.0V to 5.5V, 1A 1ch Termination Regulator for DDR-SDRAMs BD35390FJ Key Specifications General Description BD35390FJ is a termination regulator that complies with JEDEC requirements for DDR1/2/3-SDRAM. This linear
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BD35390FJ
BD35390FJ
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TB600
Abstract: TB-691-HASD TB-611-HASD TB-622-HARD TB-641-ASD-1 TB-658-HARD TB-682-RD-1 658 ITT
Text: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d
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TB600
TB-658-HARD
TB-682-RD-1
TB-691-HASD
TB600
TB-691-HASD
TB-611-HASD
TB-622-HARD
TB-641-ASD-1
TB-658-HARD
TB-682-RD-1
658 ITT
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ITT CANNON MCE
Abstract: TB600 TB-611-HASD TB-622-HARD TB-641-ASD-1 TB-658-HARD TB-682-RD-1 TB-691-HASD Cannon connectors ITT Cannon
Text: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d
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TB600
TB-658-HARD
TB-682-RD-1
TB-691-HASD
ITT CANNON MCE
TB600
TB-611-HASD
TB-622-HARD
TB-641-ASD-1
TB-658-HARD
TB-682-RD-1
TB-691-HASD
Cannon connectors
ITT Cannon
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Cannon connectors
Abstract: No abstract text available
Text: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d
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TB600
Cannon connectors
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CM3212-02DE
Abstract: No abstract text available
Text: PRELIMINARY CM3212 DDR VDDQ and VTT Termination Voltage Regulator Features Product Description • The CM3212 is a dual-output low noise linear regulator designed to meet SSTL-2 and SSTL-3 specifications for DDR-SDRAM VDDQ supply and termination voltage VTT supply. With integrated power MOSFETs the
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CM3212
500mV
CM3212-02DE
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Untitled
Abstract: No abstract text available
Text: CM3202-02 DDR VDDQ and VTT Termination Voltage Regulator Product Description The CM3202−02 is a dual−output low noise linear regulator designed to meet SSTL−2 and SSTL−3 specifications for DDR−SDRAM VDDQ supply and termination voltage VTT supply.
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CM3202-02
CM3202-02/D
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CM3202-02
Abstract: CM3202-02SM CM320 CM3202
Text: PRELIMINARY CM3202-02 DDR VDDQ and VTT Termination Voltage Regulator Features Product Description • The CM3202-02 is a dual-output low noise linear regulator designed to meet SSTL-2 and SSTL-3 specifications for DDR-SDRAM VDDQ supply and termination voltage VTT supply. With integrated power
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CM3202-02
CM3202-02
500mV
CM3202-02SM
CM320
CM3202
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CM320 200DE
Abstract: No abstract text available
Text: CM3202-00 DDR VDDQ and VTT Termination Voltage Regulator Product Description The CM3202−00 is a dual−output low noise linear regulator designed to meet SSTL−2 and SSTL−3 specifications for DDR−SDRAM VDDQ supply and termination voltage VTT supply.
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CM3202-00
CM3202â
CM320 200DE
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1n4448 itt
Abstract: Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
Text: ITT S E n i C O N D / INTERPIETA SOE D 4b a a ? n o o o a a a i aoo • is i " r * Q 3 *o °i 1N4448 Silicon Epitaxial Planar Diode fast switching diode. This type in case DO-35 is also available to specification CECC 50.001.023 max. 1.90 This diode is also available in glass case DO-34
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1N4448
DO-35
DO-34
4baP711
DO-35)
1n4448 itt
Color code diode DO-35
diode ITT specification
150D
1N4448
diode 1N4448
D1N4448
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Untitled
Abstract: No abstract text available
Text: Transmissive Optoswitch VTL23G2A, 23G3A Slotted Switch — Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches combines an infrared em itting diode IRED w ith a TTL compatible, Schm itt output, photo 1C detector in an opaque plastic case with
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VTL23G2A,
23G3A
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M091-9PSP
Abstract: DP-42-1
Text: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25-5.1 GHz GENERAL INFORMATION ITT CANNON V “ M091-9PSP \ OR ËQUIV. KDI/Triangle's sw itched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is
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M091-9PSP
DP-33
DP-36
DP-41
DP-42
DP-44
DP-51
DP-60
DP-42-1
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5h11g
Abstract: 6h11g H11G45
Text: Optoiaolator Specifications_ H11G45, H11G46 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G s e r ie s c o n s i s t s o f a g a lliu m a r s e n id e , in f r a r e d e m itt in g d i o d e c o u p le d w ith a s ilic o n D a r lin g to n - c o n n e c t e d
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H11G45,
H11G46
5h11g
6h11g
H11G45
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4N25A
Abstract: No abstract text available
Text: Optoisolator Specifications 4N25, 4N25A, 4N26, 4N27, 4N28 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor MIN. T h e 4 N 2 5 , 4N 25A , 4 N 2 6 , 4 N 2 7 , 4 N 2 8 d e v ic e s c o n s is t o f a g a lliu m a rs e n id e in fra re d e m itt in g d io d e c o u p le d w ith a s ilic o n p h o to t r a n s is to r
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4N25A,
4N25-4N28
4N25A
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Untitled
Abstract: No abstract text available
Text: Tem ic TSTA7500 Sem i r o n du< t or s GaAlAs IR Emitting Diode, Hermetically Sealed T 018 Case Description T S T A 7 5 0 0 is a h ig h e f f i c ie n c y in f r a re d e m itt in g d io d e in G a A lA s o n G a A lA s te c h n o lo g y in a h e r m e ti c a ll y s e a le d
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TSTA7500
15-JuI-96
15-Jul-96
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ZENER A23
Abstract: B2X55 Zener diode 18 ITT Zener diode itt a23 zener Zener diode itt 150 V BZX 22 itt zener diode ITT 4.7 V Zener diode itt 150 BZX55
Text: ITT SEHICOND/ INTERMETALL SDE t m 4biE711 0005451 531 « I S I r-ii-i 1 Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request. These types are also available to specification CECC 50.005.005
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4bflE711
002flSc1
BZX55
DO-35
Mbfl2711
DD02fltH
ZENER A23
B2X55
Zener diode 18 ITT
Zener diode itt
a23 zener
Zener diode itt 150 V
BZX 22 itt
zener diode ITT 4.7 V
Zener diode itt 150
BZX55
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tb600
Abstract: ITT CANNON MCE TB-600 conn female 300 pins ITT G 91 50 SP6T
Text: BROADBAND SP6T DIODE SWITCH S E R IE S TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0,02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope ational. C onsu lti a c ta y for high power options. Switches with d ivers require +5v olts at
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TB600
TB-611-HASD
TB-622-BARD
TB-641-ASD-1
TB-658-HARD
TB-682-RD-1
TB-691-HASD
tb600
ITT CANNON MCE
TB-600
conn female 300 pins
ITT G 91 50
SP6T
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hall effect transistor 502a
Abstract: SENSOR HALL 504A 506A hall switch 506a hall ITT Semiconductors HAL506 SENSOR HALL 508a hall 502a package marking 504c HAL503
Text: HAL501 .HAL506 HAL508 Hall Effect Sensor IC Specifications in CMOS technology The types differ according to the magnetic flux density values for the magnetic switching points, the tempera ture behavior of the magnetic switching points, and the mode of switching.
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HAL501
HAL506
HAL508
hall effect transistor 502a
SENSOR HALL 504A
506A hall switch
506a hall
ITT Semiconductors
SENSOR HALL 508a
hall 502a
package marking 504c
HAL503
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ITT DIODE 041
Abstract: kdi switch 041 itt diode
Text: BROADBAND SP5T DIODE SWITCH SERIES TB-500 HIGH ISOLATION-REFLECTIVE-ABSORPTIVE 0.1-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.1 to 18.0 GHz. 50 OHMS. +20 dBm operational. DC Requirements: Sw itches with drivers require +5 volts at +300 mA and - 5 volts at
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TB-500
ITT DIODE 041
kdi switch
041 itt diode
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