DIODE ITT SPECIFICATION Search Results

HOA0973-P51

Contextual Info: Home> Products > Detector > Optoschmitt Sensor > Product Page HOA0973-P51 Order Product and Get Support U.S. Authorized Distributors HOA Series Infrared Opaque Optoschm itt Sensor, Diode Output, Single Mounting Tab, Detector Side, Plastic Package Global Sales & Service

1n4448 itt

Abstract: Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
Contextual Info: ITT S E n i C O N D / INTERPIETA SOE D 4b a a ? n o o o a a a i aoo • is i " r * Q 3 *o °i 1N4448 Silicon Epitaxial Planar Diode fast switching diode. This type in case DO-35 is also available to specification CECC 50.001.023 max. 1.90 This diode is also available in glass case DO-34

HOA0973-L51

Abstract: hoa0973l51
Contextual Info: Home> Products > Detector > Optoschmitt Sensor > Product Page HOA0973-L51 Order Product and Get Support U.S. Authorized Distributors HOA Series Infrared Opaque Optoschm itt Sensor, Diode Output, Single Mounting Tab, Em itter Side, Plastic Package Global Sales & Service

Contextual Info: Transmissive Optoswitch VTL23G2A, 23G3A Slotted Switch — Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches combines an infrared em itting diode IRED w ith a TTL compatible, Schm itt output, photo 1C detector in an opaque plastic case with

M091-9PSP

Abstract: DP-42-1
Contextual Info: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25-5.1 GHz GENERAL INFORMATION ITT CANNON V “ M091-9PSP \ OR ËQUIV. KDI/Triangle's sw itched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is

Contextual Info: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25–5.1 GHz GENERAL INFORMATION SMA FEMALE TYP. ITT CANNON MDB1-9PSP OR EQUIV. KDI/Triangle’s switched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is

digital phase shifters

Abstract: cannon power supply DP-21 DP-32 DP-33 DP-36 DP-41 DP-42 DP-44 DP-51
Contextual Info: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25–5.1 GHz GENERAL INFORMATION SMA FEMALE TYP. ITT CANNON MDB1-9PSP OR EQUIV. KDI/Triangle’s switched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is

5h11g

Abstract: 6h11g H11G45
Contextual Info: Optoiaolator Specifications_ H11G45, H11G46 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G s e r ie s c o n s i s t s o f a g a lliu m a r s e n id e , in f r a r e d e m itt in g d i o d e c o u p le d w ith a s ilic o n D a r lin g to n - c o n n e c t e d

4N25A

Contextual Info: Optoisolator Specifications 4N25, 4N25A, 4N26, 4N27, 4N28 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor MIN. T h e 4 N 2 5 , 4N 25A , 4 N 2 6 , 4 N 2 7 , 4 N 2 8 d e v ic e s c o n s is t o f a g a lliu m a rs e n id e in fra re d e m itt in g d io d e c o u p le d w ith a s ilic o n p h o to t r a n s is to r

Contextual Info: Tem ic TSTA7500 Sem i r o n du< t or s GaAlAs IR Emitting Diode, Hermetically Sealed T 018 Case Description T S T A 7 5 0 0 is a h ig h e f f i c ie n c y in f r a re d e m itt in g d io d e in G a A lA s o n G a A lA s te c h n o lo g y in a h e r m e ti c a ll y s e a le d

Contextual Info: Datasheet Regulator IC Series for Automotive Termination Regulator for DDR-SDRAMs BD35395FJ-M General Description Key Specifications         BD35395FJ-M is a termination regulator compatible with JEDEC DDR1/2/3/3L-SDRAM, which functions as a linear

CM320 200DE

Abstract: DIODE ITT 310 CM320
Contextual Info: PRELIMINARY CM3202 DDR VDDQ and VTT Termination Voltage Regulator Features Product Description • The CM3202 is a dual-output low noise linear regulator designed to meet SSTL-2 and SSTL-3 specifications for DDR-SDRAM VDDQ supply and termination voltage VTT supply. With integrated power MOSFET’s, the

Contextual Info: Datasheet 1.0V to 5.5V, 1A 1ch Termination Regulator for DDR-SDRAMs BD35390FJ Key Specifications General Description          BD35390FJ is a termination regulator that complies with JEDEC requirements for DDR1/2/3-SDRAM. This linear

ZENER A23

Abstract: B2X55 Zener diode 18 ITT Zener diode itt a23 zener Zener diode itt 150 V BZX 22 itt zener diode ITT 4.7 V Zener diode itt 150 BZX55
Contextual Info: ITT SEHICOND/ INTERMETALL SDE t m 4biE711 0005451 531 « I S I r-ii-i 1 Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request. These types are also available to specification CECC 50.005.005

TB600

Abstract: TB-691-HASD TB-611-HASD TB-622-HARD TB-641-ASD-1 TB-658-HARD TB-682-RD-1 658 ITT
Contextual Info: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d

ITT CANNON MCE

Abstract: TB600 TB-611-HASD TB-622-HARD TB-641-ASD-1 TB-658-HARD TB-682-RD-1 TB-691-HASD Cannon connectors ITT Cannon
Contextual Info: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d

hall effect transistor 502a

Abstract: SENSOR HALL 504A 506A hall switch 506a hall ITT Semiconductors HAL506 SENSOR HALL 508a hall 502a package marking 504c HAL503
Contextual Info: HAL501 .HAL506 HAL508 Hall Effect Sensor IC Specifications in CMOS technology The types differ according to the magnetic flux density values for the magnetic switching points, the tempera­ ture behavior of the magnetic switching points, and the mode of switching.

ITT DIODE 041

Abstract: kdi switch 041 itt diode
Contextual Info: BROADBAND SP5T DIODE SWITCH SERIES TB-500 HIGH ISOLATION-REFLECTIVE-ABSORPTIVE 0.1-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.1 to 18.0 GHz. 50 OHMS. +20 dBm operational. DC Requirements: Sw itches with drivers require +5 volts at +300 mA and - 5 volts at

Cannon connectors

Contextual Info: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d

CM3212-02DE

Contextual Info: PRELIMINARY CM3212 DDR VDDQ and VTT Termination Voltage Regulator Features Product Description • The CM3212 is a dual-output low noise linear regulator designed to meet SSTL-2 and SSTL-3 specifications for DDR-SDRAM VDDQ supply and termination voltage VTT supply. With integrated power MOSFETs the

Contextual Info: CM3202-02 DDR VDDQ and VTT Termination Voltage Regulator Product Description The CM3202−02 is a dual−output low noise linear regulator designed to meet SSTL−2 and SSTL−3 specifications for DDR−SDRAM VDDQ supply and termination voltage VTT supply.

CM3202-02

Abstract: CM3202-02SM CM320 CM3202
Contextual Info: PRELIMINARY CM3202-02 DDR VDDQ and VTT Termination Voltage Regulator Features Product Description • The CM3202-02 is a dual-output low noise linear regulator designed to meet SSTL-2 and SSTL-3 specifications for DDR-SDRAM VDDQ supply and termination voltage VTT supply. With integrated power

CM320 200DE

Contextual Info: CM3202-00 DDR VDDQ and VTT Termination Voltage Regulator Product Description The CM3202−00 is a dual−output low noise linear regulator designed to meet SSTL−2 and SSTL−3 specifications for DDR−SDRAM VDDQ supply and termination voltage VTT supply.

CM3212

Abstract: CM321 02SM2 CM3212-02DE
Contextual Info: PRELIMINARY CM3212 DDR VDDQ and VTT Termination Voltage Regulator Features Product Description • The CM3212 is a dual-output low noise linear regulator designed to meet SSTL-2 and SSTL-3 specifications for DDR-SDRAM VDDQ supply and termination voltage VTT supply. With integrated power MOSFETs the