ESAC83M-006
Abstract: No abstract text available
Text: ESAC83M -006 2 oai '> 3 -yh+— -f=t—K SCHOTTKY BARRIER DIODE : Features • 3i Ufa it s e it^ t i t t y v -f Insulated package by fully m o ld in g . • 1&Vh Low V k • Connection Diagram i= * i' Super high speed sw itching. • ~ f l '—t *B1£
|
OCR Scan
|
500ns
ESAC83M
ESAC83M-006
|
PDF
|
MARK 7 DIODE
Abstract: 2FI50F
Text: 2 R 5 F 2 x 5 0 A Ê • W F ± / n9 - ^ il - ; u I Outline Drawings FAST RECOVERY DIODE MODULE ■ * t t S : Features • Short Reverse Recovery Time • it&l&iWl&tfM.'M • Variety of Connection Menu Insulated Type ■ f f l i i i A pplications • Arc-Welders
|
OCR Scan
|
2R50F
2x50A)
2FI50F
11s19^
95t/R89
Shl50
MARK 7 DIODE
2FI50F
|
PDF
|
YG802N09
Abstract: YG802C09
Text: YG802C N 09( ioa) SCHOTTKY B A RRIER DIODE : Features Insulated package by fully m o ld in g . • te V F Low V F • Connection Diagram T . A 'V + V 'f Super high speed sw itchin g. • fa it YG 802C 09 High reliability by planer d e s ig n .’ {¿)Q PI
|
OCR Scan
|
YG802C
SC-67
YG802C09
YG802N09
500ns,
YG802N09
YG802C09
|
PDF
|
A445
Abstract: PM 4A
Text: YG802C06HOA SCHOTTKY BARRIER DIODE : Features Insulated p ac ka g e b y fully m o ld in g . • te V F m m & m L ow V k Connection Diagram S u p e r h ig h speed s w it c h in g . • •fi'-i—mmz'thMiztote H ig h reliability by planer d es ig n. : Applications
|
OCR Scan
|
YG802C06HOA)
YG802C06
A445
PM 4A
|
PDF
|
ERB06
Abstract: No abstract text available
Text: ERB06HA : Outline Drawings FAST RECOVERY DIODE M ft-Bk • Features • t ) ? — TV £* |fg?jv : Marking M ost suitable fo r c o lo r T .V . dam per • w r tm z V M E .ir 'fa ' * 7 - 3 - K: f t High voltage by mesa design. C o lo r code : B lu e • B it
|
OCR Scan
|
ERB060A)
ERB06
|
PDF
|
fuji 2DI 50Z-120
Abstract: cf rh transistor fuji 2di Collmer Semiconductor 2DI Vceo-1200V
Text: 20/ 50Z-120 FU JI ET030E 2-Pack BJT 1200 V 50 A ✓ < 7 — POW ER TR A N S ISTO R M O D ULE ' Features • iS it/± • 7 U— High Voltage lJ — Krt/R Including Free Wheeling Diode • ASO i ? & \ s Excellent Safe Operating Area • t&W iM Insulated Type
|
OCR Scan
|
50Z-120
E82988
fuji 2DI 50Z-120
cf rh transistor
fuji 2di
Collmer Semiconductor 2DI
Vceo-1200V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESAE83-006 6 oa Y 7 ¥ < it - Y SCHOTTKY BARRIER DIODE : Features • ffivr Low Vp Super high speed switching. C o n n e c tio n D ia g ra m High reliability by planer design. A p p lic a tio n s High speed pow er switching. M a x im u m R atings and C ha ra cte ristics
|
OCR Scan
|
ESAE83-006
500ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESAD83-006I30A SCHOTTKY BARRIER DIODE • 4$ f t : Features • te V F Low V F • S uper high speed sw itchin g. « it ■ z i'— f — C onnection D iagram High reliability by planer design. ■ f f l i i : A p p lica tio n s • a » H igh speed pow er sw itchin g.
|
OCR Scan
|
ESAD83-006I30A)
500ns
|
PDF
|
G802C04
Abstract: G802C
Text: YG802C0400A *± /J '> 3 SCHOTTKY BARRIER DIODE : Features • s ty # Insulate d package by fu lly m o ld in g . • te V F Low V f Connection Diagram S u per h ig h speed s w itc h in g . • 7V — f f it t H ig h re lia b ility by p la n e r d e s ig n .
|
OCR Scan
|
YG802C0400A)
500ns
Vh-40
G802C04
G802C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: E R A 8 2 - 0 4 o 6 a i * ± /J • fl- ï fé '+ îi : Outline Drawings SCHOTTKY BARRIER DIODE -N«¡25 1 I 2 5 min' 00.56 25 m,n I 3.0 : Features • 1ftVF Low vF : Marking *17- 3 —H : Ö Super high speed sw itchin g. C o lo r c o d e : W h it e • -f\s—r - ttiist ¿asftiatt
|
OCR Scan
|
|
PDF
|
200Z-100
Abstract: No abstract text available
Text: mi F U JI [IT L M g ü M lE 1-iooovJ T 200 a 2 0 U0 7^ - 1I 0U 0 U • L r» ^ U l £ /< 7 — POWER TRANSISTOR MODULE f 13 ■ 21 Outline Drawings 29 : F e a tu re s • ¡SIiJ± High Voltage V • 7 'J — 4 • ASO M S i ' KF*9j& Including Free W heeling Diode
|
OCR Scan
|
200Z-100
20pA/jws
200Z-100
|
PDF
|
HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
|
Original
|
|
PDF
|
dc dc sepic 24V converter
Abstract: LT3758 sepic converter 550khz marking G5 MOSFET 3758f 1N4148 LT3758EMSE 6 pin current control forward dc to dc converter 1n4* rectifier Power Mosfet 75V 120A
Text: LT3758 High Input Voltage, Boost, Flyback, SEPIC and Inverting Controller DESCRIPTION FEATURES n n n n n n n n n n n Wide Input Voltage Range: 5.5V to 100V Positive or Negative Output Voltage Programming with a Single Feedback Pin Current Mode Control Provides Excellent Transient
|
Original
|
LT3758
100kHz
10-Lead
caLTC3805-5
LT3845
LTC3872
TSOT-23
3758f
dc dc sepic 24V converter
LT3758
sepic converter 550khz
marking G5 MOSFET
3758f
1N4148
LT3758EMSE
6 pin current control forward dc to dc converter
1n4* rectifier
Power Mosfet 75V 120A
|
PDF
|
ESJA8z
Abstract: No abstract text available
Text: This m a te ria l and the In lo rm a llo it herein 1» llio p ro p erly ol Fuji Electric C o .,U d . They halt be neither re p r o d u c e d , c o p ie d , len t, or d lac lo te d In any way w h a lio e v e r lor the use of any third party nor uaed for Ihe m an u factu rin g p u rp o se* w ith o u t
|
OCR Scan
|
ESJA82-1OA
H04-004-07
ESJA82-ODA
ESJA8z
|
PDF
|
|
|
HIGH VOLTAGE DIODE 6kv
Abstract: ESJA58-06A DIODE 6kv
Text: DATE NAME CHECKED _ —" t DWG.NO. m a la ria l and Hie Inform ation herein Is Ihe prop erty ol TuJI Electric Co.,Lid. They shall be neither re p ro d u c e d , co p ie d , lent, or d isclo se d In any way w h a ts o e v e r lor the mo ot a n y third party nor used for the m u n tiln ch irin g p u rp o se s w ith o u t
|
OCR Scan
|
ESJA58-06A
H04-004-07
ESJA58-06A
ESJA58-CDA
HIGH VOLTAGE DIODE 6kv
DIODE 6kv
|
PDF
|
Fuji Electric SM
Abstract: No abstract text available
Text: SPECIFICATION Device Name_ : High Voltage Si I icon Diode T y p e Name_ E S J A 8 3 " * 1 6 A _ Spec. : No._ :_ Fuji Electric Co.Ltd. Matsumoto Factory DATE NAME APPROVED Fuji Electric Co.,Ltd.
|
OCR Scan
|
H04-004-07
ESJA83-16A
H04-004-03
ESJA83-16A
Fuji Electric SM
|
PDF
|
Fuji Electric SM
Abstract: No abstract text available
Text: This mut er I nt und the Information herein I» 111» pr up er t y ol Fuji Electric Co.,Lid. They shall be neither reproduced, copied, lent, or disclosed In any way w hntioever lor Ihe use of any third party nor uied lor Ihe mnnufeclurlnd purposes w ithout
|
OCR Scan
|
ESJA52-14A
ESJA52Ö
Fuji Electric SM
|
PDF
|
ESJA53-16A
Abstract: H04-004 ESJA53-ODA
Text: Spec. DATE DRAWN CHECKED NAME - - - — - DWG.N0. Thl» material und Ih» Information herein la tie pruder ly ol Fuji Electric Co.,Lid. They ihall be neither raproducad. copied, lent, or dlaclotad In any way whatioever lor thn use of any third party nor uied lor the manufacturing purposes without
|
OCR Scan
|
H04-004â
ESJA53-16A
ESJA53-ODA
H04-004
ESJA53-ODA
|
PDF
|
FUJI ELECTRIC DIODE
Abstract: 18kv diode
Text: Device Name Tvoe Name DATE CHECKED N AM E ì : DWG.NO. Thli material and the Information twain la the properly of Fuji Electric Co.Ltd. They thall be neither reproduced, copied, lent, or dlecloied In nny way w helnosver for the <no of nny Ihlrd party nor used tor lite rnumilnctiirlng purposes w llliool
|
OCR Scan
|
H04-004-07
ESJA53-18A
H04-004-03
ESJA53-TT1A
FUJI ELECTRIC DIODE
18kv diode
|
PDF
|
diode 060
Abstract: power transistor bjt 1000 a 1150Z-100 M210 power BJT 150A bs245
Text: 2 -Pack BJT 1000 V 150 a 2DI150Z-100 Ä I-/I • V JK J * ! Outline Drawings / < 7 - h :7 > i > X 9 * ' ? n . - U POWER TRANSISTOR MODULE Features • S H E : High Voltage t7 U — ¥<4 # ASO If f eX' • KrtMc including Free Wheeling Diode Excellent Safe Operating Area
|
OCR Scan
|
1150Z-100
150At
50A///S
diode 060
power transistor bjt 1000 a
1150Z-100
M210
power BJT 150A
bs245
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Thli m a te ria l and Mia Inform ation Jim ein li ihn iiro p o rly o Fuji Electric C o.,L td. They shall be neither r e p ro d u c e d , c o p ie d , le n i, or d lsc lo ssd In any way w h a ts o tv e r for the une of any third parly nor used lor the m an u factu rin g pur p o te i w ith o u t
|
OCR Scan
|
ESJA88-08A
ESJA88-08A
|
PDF
|
KRT 30
Abstract: M107
Text: 1-Pack BJT FUJI 1 D I 400A-120 M U M Ë ïïr a iÊ y< 7 - 1200 V 400 A -;u : Outline Drawings POWER TRANSISTOR MODULE 22 50 22 ! Features • ¡SIÎEE High Voltage # 7 tj — ij Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type
|
OCR Scan
|
00A///s
KRT 30
M107
|
PDF
|
ph-200 diode
Abstract: ESJA89-14A
Text: m a t e r i a ! and lha h e re in Is the p ro p e rly ol third party nor used or the m a n u f a c tu r in g p u r p o s e s Ute express written c o n te n t of Fiji Electric C o.,L td. w ith o u t sh all be n e ith e r r e p r o d u c e d , c o p i e d ,
|
OCR Scan
|
H04-004-07
ESJA89-14A
ESJA89-CDA
ph-200 diode
|
PDF
|
HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
|
OCR Scan
|
E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
|
PDF
|
