DIODE IN 5062 Search Results

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

Contextual Info: IN 5059.IN 5062 Silizium Gleichrichter Silicon Rectifier 2A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 200.800 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0

diode IN 5062

Abstract: in 5062 silicon rectifier diode
Contextual Info: 1N 5059.1N 5062 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A

HALL SENSOR 2pin

Abstract: Allegro Hall-Effect ICs dout2 1812 footprint hall effect sensor MAX9621 A1140EUA-T C2012X7R2A104K C4532X7R2A225K CMHD4448
Contextual Info: 19-5062; Rev 0; 11/09 MAX9621 Evaluation Kit The MAX9621 evaluation kit EV kit is a fully assembled and tested circuit board that demonstrates the MAX9621 dual, 2-wire Hall-effect sensor interface with analog and digital outputs in a 10-pin FMAXM surface-mount

Contextual Info: 1N 5059.1N 5062 -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A Reverse Voltage: 200 to 800 V    !"#$ Mechanical Data      %&$' %&$"*  + ,   " ,  -        

1n 5062 silicon rectifier diode

Contextual Info: 1N 5059.1N 5062 -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A Reverse Voltage: 200 to 800 V    !"#$ Mechanical Data      %&$' %&$"*  + ,   " ,  -        

in 5062 silicon rectifier diode

Abstract: diode IN 5062 in 5062 5062 1n 5062 silicon rectifier diode
Contextual Info: 1N 5059.1N 5062 -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A Reverse Voltage: 200 to 800 V    !"#$ Mechanical Data      %&$' %&$"*  + ,   " ,  -        

C 5021 F-R

Abstract: diode IN 5062 G-5071
Contextual Info: SIEMENS CMPNTS t OPTO SIEM ENS 44E D • flE3k3Eb 0004=136 T « S I E X LDR 5001/5002/5003 HIGH EFFICIENCY RED LDH 5021/5022/5023 HIGH EFFICIENCY YELLOW LDY 5061/5062 HIGH EFFICIENCY GREEN LDG 5071/5072 RED LED Lamps T13/4 LED LAMP LDY 506X LDG 507X • High Light Output

Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Contextual Info: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

DPG60I400HA

Abstract: DPG 30 I 400 HA DPG60I4
Contextual Info: DPG 60 I 400 HA advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 I 400 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DPG 60 I 400 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

DPG60IM400QB

Abstract: DPG60I400HA
Contextual Info: DPG 60 I 400 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 I 400 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

marking 06AT

Abstract: DHG60I600HA
Contextual Info: DPH 30 IS 600 HI V RRM = I FAV = t rr = HiPerDynFRED² High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 600 V 30 A 35 ns 3 DPH 30 IS 600 HI Backside: isolated Features / Advantages: Applications: Package:

DIODE in 5060

Abstract: KSD5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 2-4. Horizontal Defelection Output Transistors 2.4.1 TO-3P F Type Transistors VcBO VcEO lc hcc Device Switching Time VrctsatW) •c (A) MIN lc (A) Ib (A) ton t$lg 0‘S) MAX 0<S) MAX Pc tt (mS) MAX (W) Comment (V) (V) (A) (NPN)

DPG60C200HB

Contextual Info: DPG 60 C 200 HB V RRM = 200 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 200 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG60C200HB

Abstract: DPG60C200QB
Contextual Info: DPG 60 C 200 HB V RRM = 200 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

DPG60C200HB

Abstract: DPG60C200QB ISOPLUS247
Contextual Info: DPG 60 C 200 HB V RRM = 200 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 200 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG60C200HB

Abstract: DPG60C200QB dpf60c200 marking code HB marking HB diode ISOPLUS247 DPG60C200
Contextual Info: DPG 60 C 200 HB V RRM = 200 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 200 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DPG60I400HA HiPerFRED² VRRM = 400 V I FAV = 60 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG60I400HA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips

transistor BD 512

Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Contextual Info: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier­ ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be­ stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern­

DPG60C200HB

Abstract: DPG60C200QB
Contextual Info: DPG60C200HB HiPerFRED² VRRM = 200 V I FAV = 2x 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips

smd TRANSISTOR sot-23 a7

Abstract: 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886
Contextual Info: Version 1.0 , September 2004 Application Note AN-CoolMOS-09 200W SMPS Demonstration Board II Author: Marko Scherf, Wolfgang Frank Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board II