DIODE IN 5060 Search Results

by359x

Abstract: BY359X-1500
Contextual Info: Philips Semiconductors Product specification Rectifier diode BY359X-1500 fast, GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope featuring low forward

BY359X-1500

Abstract: BY359X-1500S BY359 BY359S by359x
Contextual Info: Philips Semiconductors Product specification Damper diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is

definition RMS forward current

Abstract: BY359X-1500 by359 BY359X diode fast
Contextual Info: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The

power 22E

Abstract: CD41 CD411699A powerex pow-r-blok
Contextual Info: CD41_99A, CS41_99A CN41_99A, CC41_99A Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are

power 22E

Abstract: powerex pow-r-blok AC welder IGBT circuit CD41 CD411699
Contextual Info: CD41_99, CS41_99 CN41_99, CC41_99 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are

horizontal deflection circuit

Contextual Info: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for

BY329-1500S

Abstract: BY329X-1700S BY329-1500 BY459X-1500 by329x definition RMS forward current
Contextual Info: Philips Semiconductors Product specification Damper diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is

BY329X-1500S

Abstract: BY329X-1500 BY329X BY329-1500S BY459X-1500 BY329-1500 by329x equivalent
Contextual Info: Philips Semiconductors Product specification Damper diode fast, high-voltage BY329X-1500 BY329X-1500S GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery

BY459X-1500

Abstract: BY459 BY459X
Contextual Info: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for

BY459X-1500

Contextual Info: Philips Semiconductors Product specification Rectifier diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a full pack plastic envelope, featuring fast forward recovery and low forward recovery voltage. The device is intended for

DATASHEET TUNNEL DIODE

Abstract: "back diode" DIODE in 5060 ASTD-1020 PIN DIODE tunnel diode specifications diode 1020 package ASTD 2030 tunnel diode Tunnel diode ASTD-1020 ASTD-1020 detector
Contextual Info: ASTD SERIES PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times

Contextual Info: MSW4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal

Contextual Info: MSWS4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal

phototransistor 3 pin

Abstract: FOD817 t-1 ir phototransistor 3 pin phototransistor 4 pin phototransistor dual Phototransistor OPTOCOUPLERs MARKING CODE FOD817A FOD817B FOD817C
Contextual Info: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering

Contextual Info: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television

BU4508DZ

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

BU4508DZ

Abstract: bu4508df BU4508D BU4508 BU4508AZ bu4508dfx
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4507DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

BU4508DZ

Abstract: BU4508
Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers

BU4506DF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

BU1508DX

Abstract: BU1508D
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television