DIODE IDF Search Results

Contextual Info: WT- 206DV06 A Zener Diode Chips for ESD Protection 1. Feature: 1-2 Silicon Zener diode chips for electrostatic discharge (ESD) protection application. 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy. Back side:Gold Layer.

Contextual Info: WT-208DV06 M Zener Diode Chips for ESD Protection 1. Feature: 1-1. This Specification Applies to N/P/N Silicon Zener Double Diode Chips. Device NO:WT-208DV06(M) 2. Structure: 2-1. Planar type . 2-2. Electrodes : Top side : Aluminum Alloy. Back side : Gold Layer

Contextual Info: Preliminary Datasheet RJQ6003DPM 600V - 20A - IGBT and Diode High Speed Power Switching R07DS0846EJ0100 Rev.1.00 Aug 03, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Zener led

Abstract: diode zener protection DIODE ZENER DUAL Double Zener diode WT-Z224V-AU4 back diode
Contextual Info: WT-Z224V-AU4 Zener Diode Chips Dual Pad for ESD Bidrectional Protection 1. Feature: 1-1 This specification applies to N/P/N silicon zener double diodes chips, Device NO. WT-Z224V-AU4 2. Structure: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Gold pad.

10ghz optical modulator driver

Abstract: 10Gb/s laser driver FTM1141GF STM-64 10 gb laser diode thermistor 503
Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor

10 gb laser diode

Abstract: 10ghz optical modulator driver
Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor

Contextual Info: WT-224DV06 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 chips, Device NO. WT-224DV06 2. Structure: 3. Size: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Aluminum Alloy. Back side : Gold Layer. 3-1. Chip size : 24 mils x 24 mils 600 m x 600 μm .

11DF2

Abstract: 11DF1
Contextual Info: FAST RECOVERY DIODE l.lA / 1 0 0 ~ 2 0 0 V / tr r : 30nsec 1 IDF1 11DF2 FEATURES ° Miniature Size 0 Ultra - Fast Recovery ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability «100 Volts through 400 Volts Types Available

RJH60A83RDPE-00

Contextual Info: Preliminary Datasheet RJH60A83RDPE 600V - 10A - IGBT Application: Inverter R07DS0806EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

RJH60A83RDPE-00

Contextual Info: Preliminary Datasheet RJH60A83RDPE 600V - 10A - IGBT Application: Inverter R07DS0806EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

Contextual Info: Preliminary Datasheet RJH60A85RDPE 600V - 15A - IGBT Application: Inverter R07DS0809EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

NLK1C

Abstract: Peltier NLK1C6DAAA Nel butterfly sms 1550
Contextual Info: NEL Laser Diodes April2005 NLK1C6DAAA Narrow linewidth DFB laser diode in a butterfly -type 14 pin package with thermo-electric cooler and 55 dB isolator. Polarization maintaining dispersion-shifted fiber pigtail is FEATURES * Wavelength Range * Spectral Linewidth

MCP3041

Abstract: MCP3040 MOC3040 equivalent MOC30* inductive MCP3031 MOC3031 equivalent MCP3030 ic moc3041 MCP303X MOC3041 replacement
Contextual Info: QUALITY TECHNOLOGIES VDE APPROVED ZERO-CROSSING TRIACS ZERO-CROSSING PACKAGE DIMENSIONS t 6.86 DESCRIPTION These devices are optically isolated zero-crossing triac drivers. They consist of a Gallium Arsenide infrared emitting diode optically coupled to a photosensitive

Contextual Info: Preliminary Datasheet RJH60A85RDPE 600V - 15A - IGBT Application: Inverter R07DS0809EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

NLK1C

Abstract: thermoelectric peltier
Contextual Info: NEL Laser Diodes July 2005 NLK1C6BAAA Narrow linewidth DFB laser diode in a butterfly -type 14 pin package with thermo-electric cooler and 55 dB isolator. Polarization maintaining dispersion-shifted fiber pigtail is FEATURES * Wavelength Range * Spectral Linewidth

RJH60A01RDPD-E0

Contextual Info: Preliminary Datasheet RJH60A01RDPD-E0 600V - 5A - IGBT Application: Inverter R07DS0803EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

Contextual Info: Preliminary Datasheet RJH60A81RDPD-E0 600V - 5A - IGBT Application: Inverter R07DS0804EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

RJH60A83RDPP-M0

Contextual Info: Preliminary Datasheet RJH60A83RDPP-M0 600V - 10A - IGBT Application: Inverter R07DS0808EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

Contextual Info: Preliminary Datasheet RJH60A81RDPD-E0 600V - 5A - IGBT Application: Inverter R07DS0804EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

Contextual Info: Preliminary Datasheet RJH60A85RDPP-M0 600V - 15A - IGBT Application: Inverter R07DS0811EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

Contextual Info: Preliminary Datasheet RJH60A83RDPP-M0 600V - 10A - IGBT Application: Inverter R07DS0808EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

Contextual Info: Preliminary Datasheet RJH60A83RDPD-E0 600V - 10A - IGBT Application: Inverter R07DS0805EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

Contextual Info: Preliminary Datasheet RJH60A85RDPP-M0 600V - 15A - IGBT Application: Inverter R07DS0811EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

Contextual Info: Preliminary Datasheet RJH60A83RDPD-A0 600V - 10A - IGBT Application: Inverter R07DS1093EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage