714 diode varicap
Abstract: hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE
Text: DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-005E
714 diode varicap
hitachi diode
Hitachi Zener diodes
1SS106
04BZ
Hitachi diodes
using a zener diode as a varicap
05AZ
HRC0203A
GENERAL PURPOSE UHF MW MIXER DIODE
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Untitled
Abstract: No abstract text available
Text: HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer HITACHI Features • • • • Small ÀVFand AC. Good for surface mounting on printed circuit board. Each diode can be biased. Wideband operation. Ordering Information Type No. M ark Package Code
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HSB88WS
ADE-208-026B
HSB88W
200pF,
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HSB88WS
Abstract: No abstract text available
Text: ADE-208-026B Z HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer Preliminary Rev. 2 Sep. 1993 HITACHI Features Pin Arrangement • Small AVp and AC. • Good for surface mounting on printed circuit board. • Each diode can be biased. • Wideband operation.
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ADE-208-026B
HSB88WS
HSB88WS
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Untitled
Abstract: No abstract text available
Text: HSM126S Silicon Schottky Barrier Diode for System Protection HITACHI ADE-208-111C Z Rev. 3 May. 1995 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and - surge. •
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HSM126S
ADE-208-111C
HSM126S
SC-59A
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HITACHI 1SS106
Abstract: No abstract text available
Text: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI ADE-208-153A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No.
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1SS106
ADE-208-153A
DO-35
200pF,
HITACHI 1SS106
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Untitled
Abstract: No abstract text available
Text: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F Z Rev 6 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information
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HSU276
ADE-208-078F
200pF
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Untitled
Abstract: No abstract text available
Text: ADE-208-154 Z 1SS108 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Features Preliminary Rev. 0 Oct 1993 Outline • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
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1SS108
ADE-208-154
DO-35
1SS108
DO-35
SC-48
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DO-35 rectifier
Abstract: diode hitachi schottky hitachi rectifier 1SS108 1SS108 DIODE
Text: 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI ADE-208-154A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No.
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1SS108
ADE-208-154A
1SS108
DO-35
40MHz,
200pF,
200nA
DO-35 rectifier
diode hitachi schottky
hitachi rectifier
1SS108 DIODE
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Untitled
Abstract: No abstract text available
Text: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High speed Switching HITACHI ADE-208-298A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS198
ADE-208-298A
40MHz,
200pF,
DO-34
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Untitled
Abstract: No abstract text available
Text: 1SS88 Silicon Schottky Barrier Diode for CATV Balanced Mixer HITACHI ADE-208-187 Z Preliminary Rev. 0 Oct. 1993 Features • Low capacitance. (C = 0.97pF max) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code
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1SS88
ADE-208-187
DO-35
200pF,
SC-48
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Untitled
Abstract: No abstract text available
Text: HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-049F Z Rev 6 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.
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HSM88WK
ADE-208-049F
Jul1998
HSM88W
400nA
SC-59A
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diode lt 445
Abstract: No abstract text available
Text: ADE-208-243B Z HRW2502B Silicon Schottky Barrier Diode for Rectifying HITACHI Features Rev. 2 Ja n .1996 Pin Arrangement • Low forward voltage drop and suitable for high effifiency rectifying. • Full molded fin enables easy insulation from heat sink.
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HRW2502B
ADE-208-243B
2502B
W2502B
O-220FM
O-220FM
diode lt 445
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1SS106
Abstract: HITACHI 1SS106 DO-35 rectifier ADE-208-153 glass diode white band 1SS106 diode
Text: ADE-208-153 Z 1SS106 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Preliminary Rev. 0 Oct 1993 HITACHI Features Outline • Detection efficiency is very good. =CZ8= • Small temperature coefficient. • High reliability with glass seal.
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ADE-208-153
1SS106
DO-35
ESD-Ca140pA
1SS106
DO-35
SC-48
HITACHI 1SS106
DO-35 rectifier
ADE-208-153
glass diode white band
1SS106 diode
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MARK A Package Code URP
Abstract: No abstract text available
Text: ADE-208-235D Z HRU0302A Silicon Schottky Barrier Diode for Rectifying HITACHI Outline Features • Low forward voltage drop and suitable for high effifiency forward current. • Ultra small Resin Package (URP) is suitable for high density surface mounting and
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HRU0302A
ADE-208-235D
10msec
HRU0302A
MARK A Package Code URP
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HRW34
Abstract: No abstract text available
Text: HRW34 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features • Low forward voltage drop. VF= 0.80V max • High reverse voltage. (VR= 90V max) Ordering Information Type No. Laser Mark Package Code HRW34 HRW34 TO-22QAB Pin Arrangement
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HRW34
ADE-208-157B
HRW34
TQ-220AB
10msec
T0-220AB
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Untitled
Abstract: No abstract text available
Text: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F Z Rev 6 June 1996 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information
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HSU276
ADE-208-078F
200pF
10OjiA
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Untitled
Abstract: No abstract text available
Text: APE-208-401 Z HRF503A Silicon Schottky Barrier Diode for Rectifying HITACHI Features Outline • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly. Cathode mark
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APE-208-401
HRF503A
DO-214
HRF503A
DO-214
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HSM88WK
Abstract: No abstract text available
Text: ADE-208-049ECZ HSM88WK Silicon Schottky Barrier Diode for Mixer HITACHI Features Rev. 5 Jul. 1994 Pin Arrangement • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. 4P Ordering Information
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HSM88WK
ADE-208-049ECZ)
HSM88WK
400nA
200pF.
SC-59A
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Untitled
Abstract: No abstract text available
Text: HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-046E Z Rev 5 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.
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HSM88AS
ADE-208-046E
Jul1998
400nA
SC-59A
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diode hitachi schottky
Abstract: HRW26F
Text: HRW26F Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features • Low forward voltage drop. VF= 0.55V max • High reverse voltage. (VR= 40V max) • Full molded fin enables easy insulation from heat sink. Ordering Information Type No.
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HRW26F
ADE-208-156B
HRW26F
TQ-220FM
10msec
O-22QFM
diode hitachi schottky
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HRW36
Abstract: No abstract text available
Text: HRW36 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features • Low forward voltage drop. VF= 0.80V max • High reverse voltage. (VR= 90V max) Ordering Information Type No. Laser Mark Package Code HRW36 HRW36 TO-22QAB Pin Arrangement
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HRW36
ADE-208-159B
HRW36
TQ-220AB
10msec
T0-220AB
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HRW2502B
Abstract: No abstract text available
Text: HRW2502B Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-243B Z Rev. 2 Jan. 1996 Features • Low forward voltage drop and suitable for high effifiency rectifying . • Full molded fin enables easy insulation from heat sink. Ordering Information
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HRW2502B
ADE-208-243B
HRW2502B
W2502B
TQ-220FM
O-22QFM
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Untitled
Abstract: No abstract text available
Text: ADE-208-039D Z HSM276S Silicon Schottky Barrier Diode for Balanced Mixer HITACHI Features Rev.4 Aug. 1994 Pin Arrangement • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use
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ADE-208-039D
HSM276S
HSM276S
SC-59A
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