Untitled
Abstract: No abstract text available
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
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VCC400V
Abstract: C-150
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
VCC400V
C-150
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diode 30a 400v
Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Text: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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94388B
IRGP30B60KD-E
O-247AD
O-247AD
diode 30a 400v
12V 30A diode
1085 CT
600v 30a IGBT
C-150
IRGP30B60KD-E
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Untitled
Abstract: No abstract text available
Text: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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94385F
IRGB5B120KD
O-220
O-220AB
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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5120A
IRGP30B60KD-EP
O-247AD
O-247AD
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IRGB5B120KD
Abstract: TF010
Text: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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94385F
IRGB5B120KD
O-220
O-220AB
O-220AB
IRGB5B120KD
TF010
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Untitled
Abstract: No abstract text available
Text: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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94388B
IRGP30B60KD-E
O-247AD
O-247AD
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C-150
Abstract: IRGP30B60KD-EP
Text: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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5120A
IRGP30B60KD-EP
O-247AD
O-247AD
C-150
IRGP30B60KD-EP
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Untitled
Abstract: No abstract text available
Text: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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5120A
IRGP30B60KD-EP
O-247AD
O-247AD
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF225R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter
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FF225R12ME4
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fw 02j
Abstract: FF200R12KE4
Text: Technische Information / technical information FF200R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter
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FF200R12KE4
fw 02j
FF200R12KE4
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FF450R17ME4
Abstract: No abstract text available
Text: Technische Information / technical information FF450R17ME4 IGBT-Module IGBT-modules EconoDUAL 3 Modul mit Trench/Feldstop IGBT4 und Emitter Controlled³ Diode EconoDUAL™3 module with trench/fieldstop IGBT4 and Emitter Controlled³ diode IGBT-Wechselrichter / IGBT-inverter
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FF450R17ME4
FF450R17ME4
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FS450R17KE4
Abstract: No abstract text available
Text: Technische Information / technical information FS450R17KE4 IGBT-Module IGBT-modules EconoPACK + Modul mit Trench/Feldstop IGBT4 und Emitter Controlled³ Diode EconoPACK™+ module with trench/fieldstop IGBT4 and Emitter Controlled³ diode IGBT-Wechselrichter / IGBT-inverter
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FS450R17KE4
FS450R17KE4
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AN-994
Abstract: C-150 IRGS15B60K
Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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5194A
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
O-220AB
AN-994.
O-220
AN-994
C-150
IRGS15B60K
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AN-994
Abstract: C-150
Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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5194A
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
O-220AB
AN-994.
O-220
AN-994
C-150
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Y5 1N
Abstract: FS100R12PT4
Text: Technische Information / technical information FS100R12PT4 IGBT-Module IGBT-modules EconoPACK 4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACK™4 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and
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FS100R12PT4
Y5 1N
FS100R12PT4
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MARKING CODE f5
Abstract: diode marking code h6 marking code f4 DIODE Zener diode MARKING H5 CMOZ3V0 CMOZ5V1 Zener diode h5 zener diode f7 diode marking 714 CMOZ11V
Text: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™
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CMOZ43V
OD-523
CMOZ20V
CMOZ22V
CMOZ24V
CMOZ27V
CMOZ30V
CMOZ33V
CMOZ36V
CMOZ39V
MARKING CODE f5
diode marking code h6
marking code f4 DIODE
Zener diode MARKING H5
CMOZ3V0
CMOZ5V1
Zener diode h5
zener diode f7
diode marking 714
CMOZ11V
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Untitled
Abstract: No abstract text available
Text: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode
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IRG7PH35UD1M
1300Vpk
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eft303
Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
Text: E R E 2 4 ' E R E 7 4 2 o a X ± ' < T? - 9 4 * - Y FAST RECOVERY DIODE Features • H7 7 * • a Glass passivated chip Stud mounted *. Applications • Switching power supplies • ft' fJi' Free-wheel diode • ' <7— Snubber diode • Others. Maximum Ratings and Characteristics
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ERE24-ERE74
ERE24
ERE74
50HzIE
Mftl80\
Eft30
19S24
I95t/R89)
eft303
jSw Diode
diode b29
T460
ERE74
diode JSW
JSW 70
ERE24
P930
T151
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diode lt 341
Abstract: MICRO ELECTRONICS ltd transistor
Text: MICRO ELEC TRONICS LT» MIE D bOWûfl aüO[H7ô ñ C 3 MEHK MIC31TH INFRARED EMITTING DIODE MIC31TH is a GaAlAs infrared emitting diode molded in clear 3mm 0 package. With the lensing effect of the package, it has an narrow radiation angle measured from the optical axis to the half power
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MIC31TH
MIC31TH
MEL81.
1/16H
diode lt 341
MICRO ELECTRONICS ltd transistor
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D1F40
Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Text: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A
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2SA1796
2SC4668
2SC4669
2SK1194
2SK1672
2SK1533
2SK1195
D1F10
D2F10
D1F20
D1F40
S1ZB40
200v 10A mosfet
diode 2f
DIODE D1F20
S1ZA40
diode rm 62
mosfet 600V 30A
S1WB S 40 68
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BUK637-400A
Abstract: BUK637-400B P02S
Text: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable
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BUK637-400A
BUK637-400B
BUK637
-400A
-400B
BUK637-400B
P02S
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1n4148 ITT
Abstract: 4148 itt LL4148 n4148 LL4148 dynamic resistance ITT DIODE LL4148-1 150D 1N4148
Text: ITT SEMICOND/ INTERMETALL blE J> M Mbfl2711 0003152 4T5 M I S I LL4148 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4148 I- 3.510.1-r Cathode M ark
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4bfl2711
LL4148
1N4148
DQQ31SS
1n4148 ITT
4148 itt
LL4148
n4148
LL4148 dynamic resistance
ITT DIODE
LL4148-1
150D
1N4148
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