DIODE GO Z 4D Search Results

Contextual Info: SKM 400GB126D . .0 2 GH I8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .J 2 GH I8 B8 .J 2 LHM I8 LGMM 7 NOM C .03+( 2 PM I8 QQM C @MM C U GM 7 LM Y+ .03+( 2 GH I8 NMM C .03+( 2 PM I8 GOM C @MM C .J 2 LHM I8 GGMM C .03+( 2 GH I8

IC 7413

Abstract: mosfet k 2038 8050 sot-23 9435 sot XC6217B SSOT-24 XC6217 MARKING e1 SOT235
Contextual Info: ◆Regulators with Green Operation GO Function ◆Output Voltage Range: 0.8V ~ 4.0V ◆Output Current: 200mA <Up to 250mA (TYP.)> ◆Low ESR Capacitor Compatible ◆High Ripple Rejection, Low Output Noise ◆CL High-Speed Auto-Discharge (XC6217B/D) ◆Ultra Small Package: USP-4D

1N60C

Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
Contextual Info: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

C21DC

Contextual Info: S A M S U N G S E M I CONDU CT OR INC 05 D e | TTbMlME OOObSb? M | 8-Bit Bus Interface D-type Latches with 3-State Outputs g & S g f 8 4 5 /8 4 6 ~ Preliminary Specifications ! ' ' y - % - b i''0 5 FEATURE • DESCRIPTION • 3-state buffer-type outputs drive bus-Hnes directly

Contextual Info: SAMSUNG SE MIC ONDU CT OR INC □ ¥ K S54H C TLS Q A C /Q A d K S 74H C TLS O H O /O H O Preliminary Specifications FEATURE • 3-state buffer-type outputs drive bus-IInes directly • Bus-structured pinout • Provides extra bus driving latches' necessary for

c534 diode

Contextual Info: HD74HC374 HD74HC534 • Octal D-type Flip-Flops with 3-state outputs • Octal D-type Flip-Flops (with inverted 3-state o u tp u ts ) These devices are positive edge triggered flip-flops. The difference between HD74HC374 and HD74HC534 is only that the former is a true outputs and the latter is a false outputs.

Wamco

Abstract: KW-105G-H KW-ML3-215S KW-105G-AL-DIP KW-104S-EW KW-515 KW-105AL KW-105G-DIP KW-115G-DIP KW-205S-DP
Contextual Info: WAMCO INC HE D | =jS04SLl 00 0 04 S S 1 | 7^4 -33 T ' H I - Z i / ' H I ' 3 $ Specifications Part No. Description Volt­ age (V Current Per Segment (mA) Character (in) Package Dimensions (in) Average Bright­ ness (Ft/L) Millicandela (MCD) Height Width H

TC74HC40105A

Contextual Info: TOSHIBA TC74HC40105AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC40105AP, TC74HC40105AF 4 Bit X 16 Word FIFO REGISTER The TC74HC40105A is a high speed CMOS 4bitXl6word first - in, first - out FIFO Strage Register fabricated with

Contextual Info: HD74BC574A-Octal D Type Flip Flops With 3 State Outputs The HD74BC574A provides high drivability and operation equal to or better than high speed bipolar standard logic IC by using Bi-CM OS process. The device features low power dissipation that is

KAD7001

Abstract: KAD7001CQ zenamic 220 KAD7001Q KAD700 SDP23 21P16 SDP11 P1822
Contextual Info: KAD7001 3 3/4-DIGIT 3260-COUNT A/D CONVERTER 3 3/4-DIGIT 3260-COUNT A/D CONVERTER The KAD7001 is a low power CMOS dual-slope A/D con­ verter with 3 3/4-digit numeric and 33-segment bar-graph LCD display driver, auto-ranging, and single 3V battery operation.

Contextual Info: ROHM CO LTD •4DE 7 ô 2 f l cH cl D DGGSSTB T •RH M 2SB1286 h "7 > y X $ / I ransistors - 7 ^ 3 3 - 3 1 2SB12. pnp Epitaxial Planar PNP Silicon Darlington Transistor # —U> h hFE t f ’r a t ' o 2 K rtM o

Contextual Info: FYPF0545S FYPF0545S Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes TO-220F 1 2 1. Cathode 2. Anode SCHOTTKY BARRIER RECTIFIER

Contextual Info: HD74BC373A-Octal D Type Transparent Latches With 3 State Outputs H ie HD74BC373A provides high drivability and operation equal to or better than high speed bipolar standard logic IC by using B i-C M O S process. The device features low power dissipation that is

Contextual Info: HD74BC563A-Octal D Type Transparent Latches With 3 State Outputs H D 74B C 563A provides high drivability and operation equal to or better than high speed bipolar standard logic IC by using Bi-CM O S process. The device features low power dissipation that is

FQE10N20CTU

Contextual Info: FQE10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQPF5N50CF

Abstract: DATE CODE FAIRCHILD
Contextual Info: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

45N20B

Abstract: 45N20
Contextual Info: SSH45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRF 450 MOSFET

Contextual Info: IRFW654B / IRFI654B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFS240B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

Contextual Info: IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

irfs250a

Contextual Info: IRFS250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

Contextual Info: HD74HC374 HD74HC534 • Octal D-type Flip-Flops with 3-state outputs • Octal D-type Flip-Flops (with inverted 3 - state o u tp u ts) These devices are positive edge triggered flip -flo p s. The d if­ ference between HD74HC374 and HD74HC534 is on ly that

Contextual Info: IRFM210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

Contextual Info: IRFM220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching