DIODE GG 9C Search Results

transistor 6c9

Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Contextual Info: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A

Contextual Info: SKD 30 <L[YC <LLY <<LY[ $M V F; ¥ TI- V ]^ _NX N, Z L,/2 < H; c; ^; 9H; 9c; < I?8*% [aM F;b;H¥9 [aM F;b;c¥9 [aM F;b;^¥9 [aM F;b9H¥9 [aM F;b9c¥9 QR ` ;C9G ;CF ;CG ;CdG ;C] 9:; Symbol $M Power Bridge Rectifiers $MNA [aM F;b9:¥9 Conditions I( V cG _NC /%&'( *+9X

2N6796

Abstract: 2N6795 2N6195 2N679B 2N6196 LE17 diode 60V 8A
Contextual Info: 37E » SEMELAB LTD I 0133107 □□□□313 1 T-39-09 JAN 0 5 1988 SEM ELAB 2N 6795 2N 6796 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES P IN 1 -S o u rc e P IN 2 -G a te

Contextual Info: SKM 300GB126D $ * GH I2> :'/&44 .- &%564& 47&(6;6&B Absolute Maximum Ratings Symbol Conditions IGBT 123F $J * GH I2 A2 $J * LHM I2 LGMM 1 NLM C $(,4& * OM I2 GMM C RMM C T GM 1 LM X4 $(,4& * GH I2 GHM C $(,4& * OM I2 LZM C RMM C HMM C $8J ] RM ^^^ _ LHM I2

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion-Mode FET E202 2N3631 2N3823 Junction FETs JFETs 2N2606 2N3329 E202 P-Channel Depletion Mosfets
Contextual Info: AN73-7 s S ilic o n ix APPLICATION NOTE An Introduction to FETs INTRODUCTION In fact, FET technology today allows a greater packaging density in large-scale integrated circuits LSI than would ever be possible w ith bipolar devices. The basic principle o f the field-effect transistor (F E T ) has

HX 711

Contextual Info: SKB 30 <LIYC <LLY <<LYI $M V F; [ T¥- V ]^ _NX N, Z L,/2 < H; ^; c; 9H; 9^; < ¥?8*% Ia3 F;b;H[9 Ia3 F;b;^[9 Ia3 F;b;c[9 Ia3 F;b9H[9 Ia3 F;b9^[9 QR ` ;C9G ;CF ;CG ;CdG ;C] 9:; Symbol $M Power Bridge Rectifiers $MNA Ia3 F;b9:[9 Conditions ¥( V ^G _NC /%&'( *+9X

1001 dl pwm

Abstract: Marcon capacitor Co manual Bst Tiny 20 .05resistor
Contextual Info: 19-1321; Rev 0; 1/98 A i> ix iy k i -6V* l u ^ o n k " AVMLABÎi; Miniature, Low-Voltage, Precision Step-Down Controller Features The MAX1637 synchronous, buck, switch-mode powersupply controller generates the CPU supply voltage in battery-powered systems. The MAX1637 is a strippeddown version of the MAX1636 in a smaller 16-pin QSOP

MF0D71

Abstract: MFOD71 MFOD71 motorola MFOD71 circuit 2N4401 ITT MFOE76 MFOD75 fiber optical photo detector MC3302 MOTOROLA FIBER OPTIC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M FO D71 Fiber O p tic s — FLCS F am ily P h o to D e te c to r Diode Output FLCS FAMILY FIBER OPTICS PHOTO DETECTOR DIODE O U TPU T . . . designed fo r low cost, short distance Fiber Optic Systems using 1000 micron core

Contextual Info: TOSHIBA TC74HC245AP/AF/AFW TC74HC640AP/AF Octal Bus Transceiver TC74HC245 3-State, Non-Inverting TC74HC640 3-State, Inverting The TC74HC245A, and 640A are high speed CMOS OCTAL BUS TRANSCEIVERS fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent

IN4462

Abstract: 1N4434 1N4504 1N4475 1N4465 i23l 1N4427 1N4474 1N4499 1N4504 3A diode
Contextual Info: Zener Voltage 3 t Izr @ mA Zener Type No. Volts 1N4418 1N4419 1N4420 39.0 43.0 47.0 1N4421 1N4422 1N4423 1N4424 1N4425 1N4426 51.0 56.0 62.0 Max. Zener Impedance @ Izt Ohms 21.0 23.0 26.0 30.0 33.0 40.0 68.0 75.0 82.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 1N4427

2sk1058 equivalent

Abstract: 2SK1058 cross reference diode gs1j 2sc1343 2sk186 2SK2265 2SK317 2SJ68 2SK151 2sc1343 hitachi
Contextual Info: Section 5 A bsolute M axim um R atings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute Maximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS

Contextual Info: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U฀ DK:GH฀;><IF:฀D;฀B:F>H฀/,+฀L฀.X U฀2AHF6฀ADK฀<6H:฀8=6F<: V !0฀8M[^Rh .) O R =L"`_#%^Rh )',.)  *2 _< Q X%dia U฀"LHF:B:฀9J 9H฀F6H:9 U฀%><=฀E:6@฀8IFF:CH฀86E67>A>HM

1n3020 zener diode

Abstract: 1N3206 in3155 1N2980 1N2981 1N2982 1N2983 1N2985 1N2986 1N2987
Contextual Info: Zener Type No. Zener Voltage at 1ZT Volts @ mA Max. Zener Impedance @ lZT Ohms 3.0 4.0 " 1N2979 1N2980 1N2981 1N2982 1N2983 2N2984 1N2985 1N2986 1N2987 1N2988 1N2989 1N2990 1N2991 1N2992 1N2993 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 27.0 30.0 33.0 36.0

1N3106

Abstract: in3155 1N3206 1N3098 1N3105 1N3199 1N31 1N3112 1N3155 1N318
Contextual Info: Zener Type No. 1N3049 1N3050 1N3051 Zener Vo tate al: li Volts @ mA 1.6 1.4 1.2 160.0 180.0 200.0 Max. Zener Impedance @ Izr Ohms Zener Voltage Tolerance 1100.0 1200.0 1500.0 No Suffix = 2 0 % Suffix A = 1 0 % Suffix B = 5 % Power Rating Device Package MICROSEMI

Diode DII

Abstract: 2SK299 2SK1518 equivalent 2SJ68 2SK1058 2sk135 application note 2SK1058 cross reference 2SK2265
Contextual Info: Section 5 Absolute Maximum Ratings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute M aximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS

1N310

Abstract: ZENER DIODE 18 volt 5 watt Zener diode h5c 1N2621 IN333 1N2620 1N2623 1N936 1N937 1N2865-1N2
Contextual Info: lo i£>r-«. 00 T> fnrnro ro ro z&><zf>zo CD 01 m ai IX i£>kO cm O O O O C CO ^ ^ ^ ^ ^ Z Z O' ' Q I I I ! o o o o0*0o S'U) ÇVJ -< o HUO h E «> c oooo d o d o VO 00 O CM \0 sO 0 s o' ) LO lf) i n in I +1 +1 +1 +1 ) PO 00 co co >ci oì ci cri cg CM CM

Burr-Brown Application Note AN-165

Abstract: 1N414S ppmc101 pfr 852 diode BB REF200 350JLA PPMC-101 PWS740 Lm324 window comparator REF200
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N « REF200 DUAL CURRENT SOURCE/CURRENT SINK FEATURES APPLICATIONS • COMPLETELY FLOATING: No Power Supply or Ground Connections • HIGH ACCURACY: 100|^A ±0.5% • LOW TEMPERATURE COEFFICIENT:

Contextual Info: Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0600 Rev.6.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 92 mΩ typ (VGS = 10 V, ID = 1.3 A) • Low drive current • High speed switching • 4.5 V gate drive

SN0608098-GP

Abstract: BQ24745RHDR-GP TPS51117PWR-GP nxp pr533 foose rs780M mec5035 c840 dell BCM5761 RS780
Contextual Info: 5 4 3 2 1 FOOSE UMA 14" Schematics Document D D AMD Giffin CPU S1G2 RS780M + SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,

rold rotary switches RC Series

Abstract: MM74HC4016 National Semiconductor COP888BC Deutsch Relays E215 endless rotary potentiometer COP800 COP884BC COP888CG COP888EK E215
Contextual Info: COP8 Microcontroller COP888 Feature Family User’s Manual Literature Number 620897-003 September 1996 REVISION RECORD ii REVISION RELEASE DATE A 03/89 First Release COP888 User’s Manual NSC Publication Number 420411060-001A B 07/94 Reformatted and updated manual to include information on new devices added to the COP888 Feature

1N4838

Abstract: IN4462 1N4475 1N4465 1N4418 1N4504 1N4474 1N4477 1N4419 1N4420
Contextual Info: Zener Voltage 3 t Izr @ mA Zener Type No. Volts 1N4418 1N4419 1N4420 39.0 43.0 47.0 1N4421 1N4422 1N4423 1N4424 1N4425 1N4426 51.0 56.0 62.0 Max. Zener Impedance @ Izt Ohms 21.0 23.0 26.0 30.0 33.0 40.0 68.0 75.0 82.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 1N4427

ZENER DIODE color bands

Abstract: 1N901 1N3206 1N31 1N3112 1N3155 1N318 1N32 glass "DO-7" diode color
Contextual Info: Zener Type No. 1N3049 1N3050 1N3051 Zener Vo tate al: li Volts @ mA 1.6 1.4 1.2 160.0 180.0 200.0 Max. Zener Impedance @ Izr Ohms Zener Voltage Tolerance 1100.0 1200.0 1500.0 No Suffix = 2 0 % Suffix A = 1 0 % Suffix B = 5 % Power Rating Device Package MICROSEMI

Contextual Info: Preliminary Datasheet HITK0302MP Silicon N Channel MOS FET Power Switching R07DS0483EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 92 m typ (VGS = 10 V, ID = 1.3 A)  Low drive current  High speed switching  4.5 V gate drive

Contextual Info: Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0500 Previous: REJ03G1275-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A)  Low drive current  High speed switching