DIODE GA 6C Search Results

19J6

Abstract: 19EA8 19ez8 6bg6 19BG6-GA 19T8 6bg6ga 6BG6G 19AU4-GTA 6au4
Contextual Info: 19AU4-GTA 19BG6-GA 19CL8-A 19EA8 19EZ8 19J6 19T8 ^ gfotfW* TUBES ET-T934B Page 1 3-60 - DESCRIPTION AND RATING = = = = = = = = 19AU4-GTA Diode. Identical to the 6AU4-GTA except for heater ratings and addition of a controlled heater- warm-up characteristic. Refer to the 6AU4-GTA Description and Rating sheet for complete data.

Contextual Info: SKM 600GA12T4  27 8&  $       / Absolute Maximum Ratings Symbol Conditions IGBT , ; 27 8  ; 6C7 8 >+ 6233  D63 -  E3 8 C33 - 6E33 - G 23  63 J  27 8 C37 -  E3 8 7F3 - 6E33 - F2 3 - 733 - 9 3 :6C7 8 9 3 :627

Contextual Info: SKM 600GA12T4  27 8&  $       / Absolute Maximum Ratings Symbol Conditions IGBT , ; 27 8  ; 6C7 8 >+ 6233  D63 -  E3 8 C33 - 6E33 - G 23  63 J  27 8 C37 -  E3 8 7F3 - 6E33 - F2 3 - 733 - 9 3 :6C7 8 9 3 :627

Contextual Info: SKM 150GB12T4  27 8$  "      - Absolute Maximum Ratings Symbol Conditions IGBT * ; 27 8  ; 6>7 8 A 6233  2?3 +  @3 8 6@3 + 73 + B 23  63 F  27 8 6C3 +  @3 8 6 3 + 73 + C33 + 233 + 9 3 :6>7 8 9 3 :627

SKM 300 GA 102 D

Abstract: si 13003 br hc 13003 ml 13003 skm300ga122d semikron diode 200a DDD3717 DDG371B GA102 SKM 300 CIRCUIT
Contextual Info: 013bb71 □□□3710 Iflfl * S E K G S1E D S EM IK R D N SEPIIKRON INC Absolute Maximum Ratings Symbol Values 102 D Conditions1> 1000 1200 1000 1200 300/200 600/400 ±20 1750 -5 5 . . .+150 2 500 Class F 55/150/56 VcES Rge = 20 k iî VCGR Ic Tease = 2 5 / 8 5 ° C

Contextual Info: F A IR C H IL D July 1997 SEM ICONDUCTO R ADVANCE INFORMATION tm FDQ4006N Dual Common Drain N-Channel Enhancement Mode Field Effect Transistor General Description Features SOIC-14 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

BD3 diode

Abstract: 6n06e k4366
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

L1N08LE

Abstract: Rlp1N08le
Contextual Info: RLP1N08LE S e m ic o n d u c to r April 1999 Data Sheet File Num ber 2252.3 Features 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET • 1A, 80V T he R LP 1N 08L E is a s e m i-sm a rt m on olithic po w e r circu it w h ich in co rp o ra te s a lateral b ipo lar transistor, tw o resistors,

2N6657

Abstract: 2N6658 VN66AF VN67AA 2N6656 VN64GA VN88AF VN-99-A 2N6657 siliconix IRF120
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

TLP573

Abstract: TLP575 ixp 400 75S-G TlP61 TLP641 TOSHIBA THYRISTOR DIODE ga 6c TA525 TLP641J
Contextual Info: TOSHIBA {DIS CR ETE/O PT O} ‘H 9097250 TOSHIBA <DISCRETE/OPTO> 99D D eT J ÌD17ESG 0017472 17472 D 7-HI-ZS TLP573 INFRARED L E D +P H O TO D IO D E + DARLINGTON TLP573 CAN CONTROL OC 1A. THIS UNIT tS A 9-LEAO OIP PACKAGE. • MOTOR CONTROL • ftC MACHINE

1RF720

Abstract: VN64GA 1rf820 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

Contextual Info: SKiiP 16GH066V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter 5#0   > 5 #0 0 '& +6        ) '& 9:/; + 6. ) *&/ +  ) '& 9:/; + 6. ) *:& +  ) *  . MiniSKiiP 1 H-bridge inverter SKiiP 16GH066V1    

diode b33

Abstract: DIODE ga 6c
Contextual Info: SKM 400GA124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 >   % SEMITRANSTM 4 Low Loss IGBT Modules SKM 400GA124D , 5 13 D  @D > 5 163 7. Characteristics Symbol Conditions IGBT %.8        Typical Applications

Contextual Info: SKM 400GA124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 >   % SEMITRANSTM 4 Low Loss IGBT Modules SKM 400GA124D , 5 13 D  @D > 5 163 7. Characteristics Symbol Conditions IGBT %.8        Typical Applications

Contextual Info: SKM 400GA124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 >   % SEMITRANSTM 4 Low Loss IGBT Modules SKM 400GA124D , 5 13 D  @D > 5 163 7. Characteristics Symbol Conditions IGBT %.8        Typical Applications

6ca DIODE

Abstract: DIODE 6ca inverter 3 phase
Contextual Info: SKiiP 39AC066V4 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter 6#1   > 6 #1 1 * '& ,7        * '& 9:0; , 7/ * +&0 ,  * '& 9:0; , 7/ * +:& ,  * +  / MiniSKiiP 3 3-phase bridge inverter SKiiP 39AC066V4

inverter 3 phase

Abstract: 6ca DIODE DIODE 6ca 39AC066V4
Contextual Info: SKiiP 39AC066V4 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter 6#1   > 6 #1 1 * '& ,7        * '& 9:0; , 7/ * +&0 ,  * '& 9:0; , 7/ * +:& ,  * +  / MiniSKiiP 3 3-phase bridge inverter SKiiP 39AC066V4

ga sot-89

Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Contextual Info: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C

G118

Abstract: D123 G116 G117 G119 n channel enhancement MOSFET
Contextual Info: O N fflM G 1 1 6 -G 1 1 5 and 6-Channel MOS-FET Switches Military Series - 5 5 ° C t o + 1 2 5 °C GENERAL DESCRIPTION FEATURES These switches may be connected d ire ctly to the IN TE R S IL switch-driver D123 series w ith o u t need o f any interfacing

3N81

Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
Contextual Info: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of

Contextual Info: 30E D NEC b 4S7SSS 002=1537 1 • ELECTRONICS INC LASER DIODE / NDL5008 1 200 nm O P T IC A L F IB E R C O M M U N IC A T IO N S InGaAsP DOUBLE H ETEROSTRUCTURE LA SER DIODE D E S C R IP T IO N N D L 5 0 0 8 is a long wavelength laser diode especially designed fo r long distance high capacity transm ission systems. The D C *

IRFP9240

Contextual Info: P-CHANNEL POWER MOSFETS IRFP9240/9241 FEATURES • L o w e r R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

74HC123AN

Abstract: 74HC123AM 74HC123A
Contextual Info: A I R C H S eptem ber 1983 I L D Revised February 1999 S E M IC O N D U C T O R TM General Description p u t p u ls e e q u a tio n is s im p ly : P W = R e x t ( ^ e x t ) ! w h e re The M M 74H C 123A high speed m onostable m ultivibrators (one shots) utilize advanced silicon-gate C M OS te ch n ol­

diagram 3 phase heater control

Abstract: diagram 3 phase heater 6cn7 reactance tube rs tube transistor+6cn
Contextual Info: 6 C N7 TUNOSOL D U P L E X - D IO D E T R IO D E M IN I A T U R E TYPE COATED UN I P O T E N T I A L CATHODE SE RI E S H EA TE R 6 . 3 + 0 . 6 VOLTS 3 0 0 MA. PARALLEL. 3 . 1 5 VOLTS 6 0 0 + 4 0 MA. AC OR DC ANY MOUNTING P O S I T I O N CONTROL OF A P P L I E S ONLY