DIODE F6 Search Results

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

Contextual Info: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P RECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted D F6 Distributed Feed-Back laser diode B u tte rfly package module w ith optical isola­

m867

Abstract: ntc m867
Contextual Info: SFH 482201 SIEMENS G aA lA s-LA S ER DIODE 250 mW Package Dimensions in mm 1. 2. 3 4. Peltier-Cooler + NTC NTC Laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode Peltier-Cooler (-) FEATURES Maximum Ratings * Quantum-W ell Structure Manufactured

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

Melcor peltier

Abstract: m867 peltier melcor
Contextual Info: SIEMENS SFH 482201 GaAlAs-LASER DIODE 250 mW Package Dimensions in mm 11.7 04 0 Laser M irror ! :;z 3 c : 7.0 1. 2. 3 4 Peltier-C ooler + NTC NTC Lase rdiode C athode 5 6 7 8 Laserdiode A node M onitor Diode Anode M onitor Diode C athode Peltier-C ooler (-)

ST-12

Abstract: Scans-0017340
Contextual Info: I MAX.* R C A - I F6 DUPLEX-DIODE PENTODE T ie 1F6 is a duplex-diode pentode consisting of two diodes and a pen­ tode in a single bulb. It is recom­ mended for service as a combined detector, amplifier radio-frequency, intermediate-frequency or audio-frequency , and automatic-volume-control tube in

Contextual Info: SANSHA ELECTRIC MFG CO 37E D H 7 ^ 1 2 4 3 QQDDD77 5 H S E M J ;. ~Q DIODE MODULE SanRex Power Diode Module D F60B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor

C532 diode

Abstract: b16/41289
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

V06T

Abstract: FZ600R12KP4
Contextual Info: Technische Information / technical information FZ600R12KP4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , (-./ 0 !

2mo9

Abstract: FZ400R12KE4
Contextual Info: Technische Information / technical information FZ400R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , - )./0 1 !

fdfs6n303

Abstract: 6n303 L86Z SOIC-16 F011 F63TNR F852
Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

FZ600R12KE4

Abstract: 2N92 DZ60 DZ300
Contextual Info: Technische Information / technical information FZ600R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , - )./0 1

BD3 diode

Abstract: 6n06e k4366
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

IFS100B12N3E4

Abstract: C5363 IFS100B12N3E4B
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current

diode c24 06 6D

Abstract: LTC4098-3.6
Contextual Info: Technische Information / technical information FF450R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

fdfs6n303

Abstract: F011 F63TNR F852 L86Z SOIC-16
Contextual Info: January 2000 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

474F3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

Contextual Info: Technische Information / technical information FF600R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

LTC4098-3.6

Abstract: 6N16 l436 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

a7840

Abstract: fdfs6n303
Contextual Info: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor’s FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and

BT 69D

Abstract: FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data

LTC4098-3.6

Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense

SO8 package fairchild

Abstract: fd303 f852
Contextual Info: August 1999 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The

W6 Diode

Contextual Info: SKN 2F50 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 2F50 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 # :<8='&1+( >.()&-)- 81=- ?$@ AB +( 5CDEFG 3HI $JHK &<+-) 1+ 81=-