DIODE F2C Search Results

IFS100B12N3E4

Abstract: C5363 IFS100B12N3E4B
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current

IFS150B12N3T4_B31

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

474F3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

LTC4098-3.6

Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense

LTC4098-3.6

Abstract: A20-LCD15.6 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

diode F4 6A

Abstract: 4F36F123
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

Contextual Info: MOTOROLA O rder this docum ent by M M DF2C01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 01 HD Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET

Contextual Info: MOTOROLA Order this document by MMDF2C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products M o to ro la P re ferre d D e vic e C om plem entary TMOS Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

D2C02

Abstract: Motorola TMOS Power FET P-Channel DIODE F2C N and P MOSFET
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect TVansistors COMPLEMENTARY DUAL TM O S POW ER FET 2.0 AM PERES 20 VOLTS MiniMOS devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by M M DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs

DIODE F2C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M M D F2C 03H D Medium Power Surface Mount Products Motorola Preferred Device Complementary TMOS Field Effect Transistors M in iM O S '" d evice s are an a d va n ce d s e rie s o f p o w e r M O S F E Ts

f2c02

Contextual Info: MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

f2c02

Abstract: MOSFEt n channel for 800 volt 2 amp 2706 fet mosfet transistor 400 volts.100 amperes AN569 MMDF2C02E MMDF2C02ER2
Contextual Info: MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

F2C02

Abstract: AN569 MMDF2C02E MMDF2C02ER2
Contextual Info: MMDF2C02E Advance Information Power MOSFET 2.5 Amps, 25 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

f2c02 motorola

Abstract: f2c02 AN569 MMDF2C02E MMDF2C02ER2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF2C02E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C02E Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface

TEA1601T

Abstract: ON4959 12NC philips OQ0260HL TEA1601T/N5 ON4959 transistor TEA1601T/N2 tea1091 OQ0256HP TV power transistor ON4959
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN49 Exhibit A June 30, 2003 SEE DN49 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

Contextual Info: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V c es le Ic rm P to t 600 V 200 A tp = 1 ms 400 A tc = 25°C 800 W Thermal properties

Contextual Info: FF 200 R 12 KF Therm al properties Therm ische Eigenschaften 0,044 C/W DC, pro Baustein / per module 0,088 C/W DC, pro Zweig / per arm 0,03 °C/W pro Baustein / per module 0,06 °C/W pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties

Contextual Info: FZ 200 R 12 KF 2 Transistor Transistor Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,089 °CAN Elektrische Eigenschaften Electrical properties H öchstzulässige W erte Maximum rated values RthCK VcES lc 1200 V 200

10J24

Contextual Info: FZ 200 R 12 KF 2 Transistor Transistor Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,089 °CAN Elektrische Eigenschaften Electrical properties H öchstzulässige W erte Maximum rated values RthCK V CES lc 1200 V 200

IADJE

Contextual Info: TPS92560 www.ti.com SNVS900A – DECEMBER 2012 – REVISED JANUARY 2013 SIMPLE LED DRIVER FOR MR16 AND AR111 APPLICATIONS Check for Samples: TPS92560 FEATURES APPLICATIONS • • • • 1 • • • • • • • • • • • Controlled peak input current to prevent overstressing of the electronic transformer