IPP037N06L3 G
Abstract: No abstract text available
Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G 3 Power-Transistor Product Summary Features V 9I . K R#562=7@C9:897C6BF6?4JDH:E49:?82?5DJ?4 C64 R -@?>2I-' +&, Z R AE:>:K65E649?@=@8J7@C 4@?G6CE6CD
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IPB034N06L3
IPI037N06L3
IPP037N06L3
492C86à
E6DE65
E2C86Eà
IPP037N06L3 G
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IPB230N06L3
Abstract: IPP230N06L3 G s4si
Text: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB230N06L3
IPP230N06L3
76BF6?
IPP230N06L3 G
s4si
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Untitled
Abstract: No abstract text available
Text: IPB081N06L3 G IPP084N06L3 G Jf]R 3 Power-Transistor Product Summary Features R#562=7@C9:897C6BF6?4JDH:E49:?82?5DJ?4 C64 R AE:>:K65E649?@=@8J7@C 4@?G6CE6CD V 9I . K R -@?>2I-' 0&) Z I9 -( 6
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IPB081N06L3
IPP084N06L3
492C86à
E6DE65
E2C86Eà
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Untitled
Abstract: No abstract text available
Text: IPB049N06L3 G IPP052N06L3 G Jf]R 3 Power-Transistor Product Summary Features R#562=7@C9:897C6BF6?4JDH:E49:?82?5DJ?4 C64 R AE:>:K65E649?@=@8J7@C 4@?G6CE6CD V 9I . K R -@?>2I-' ,&/ Z I9 0( 6
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IPB049N06L3
IPP052N06L3
492C86à
E6DE65
E2C86Eà
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Untitled
Abstract: No abstract text available
Text: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω
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STF1N105K3,
STFW1N105K3,
STP1N105K3
O-220FP,
O-220
STF1N105K3
STFW1N105K3
O-220FP
O-220
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9926C
Abstract: IPI037N06L3 s4si IPP037N06L3 G
Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K +&, Z" 1(
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IPB034N06L3
IPI037N06L3
IPP037N06L3
76BF6?
766substances.
9926C
s4si
IPP037N06L3 G
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AF41
Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
Text: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K ,&/ Z" 0( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB049N06L3
IPP052N06L3
AF41
diode 6e
marking 8FC
diode 6d 50
56E MARKING
s4si
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marking xd diode
Abstract: e866 marking 8fc marking J6c s4si
Text: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K 0&) Z" -( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB081N06L3
IPP084N06L3
76BF6?
marking xd diode
e866
marking 8fc
marking J6c
s4si
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Untitled
Abstract: No abstract text available
Text: SEMiX 253GB176HDs Absolute Maximum Ratings Symbol Conditions IGBT . .12 4 6, SEMiX 3s Trench IGBT Modules SEMiX 253GB176HDs Preliminary Data Features
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253GB176HDs
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603GAL066HD
Abstract: 603GB066HD semix igbt GAL 603GAR066HD
Text: SEMiX 603GB066HD . Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 3 ' 6 % '( 8. )6 - &(. ) '( 8. )6 - &9( ) & Values Units 1. 95. ('. 8. 1&.
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603GB066HD
603GAL066HD
603GAR066HD
603GAL066HD
603GB066HD
semix igbt GAL
603GAR066HD
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Untitled
Abstract: No abstract text available
Text: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT . .12 4 6, SEMiX 3 Trench IGBT Modules SEMiX 253GB176HD Preliminary Data Features
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253GB176HD
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Untitled
Abstract: No abstract text available
Text: SEMiX 603GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 3s ' 6 % '( 8. )6 - &(. ) '( 8. )6 - &9( ) & Values Units 1. 95. ('. 8. 1&.
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603GB066HDs
603GAL066HDs
603GAR066HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 603GB066HD . Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 3 ' 6 % '( 8. )6 - &(. ) '( 8. )6 - &9( ) & Values Units 1. 95. ('. 8. 1&.
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603GB066HD
603GB066HD
603GAL066HD
603GAR066HD
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OF IGBT
Abstract: No abstract text available
Text: SEMiX 603GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 3s ' 6 % '( 8. )6 - &(. ) '( 8. )6 - &9( ) & Values Units 1. 95. ('. 8. 1&.
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603GB066HDs
Fig603GB066HDs
OF IGBT
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SEMIX202GB066HDS
Abstract: No abstract text available
Text: SEMiX 202GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 2s Trench IGBT Modules SEMiX 202GB066HDs Target Data Features Typical Applications
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202GB066HDs
01-12-200202GB066HDs
SEMIX202GB066HDS
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Untitled
Abstract: No abstract text available
Text: SEMiX 202GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 2s Trench IGBT Modules SEMiX 202GB066HDs Target Data Features Typical Applications
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202GB066HDs
68itching
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diode f2 4j
Abstract: No abstract text available
Text: SEMiX 202GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 2s Trench IGBT Modules SEMiX 202GB066HDs Target Data Features Typical Applications
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202GB066HDs
68itching
diode f2 4j
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Untitled
Abstract: No abstract text available
Text: SEMiX 201GD066HDs Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 13s Trench IGBT Modules SEMiX 201GD066HDs Target Data Features
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201GD066HDs
01-12-20201GD066HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 202GB066HD Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 2 Trench IGBT Modules SEMiX 202GB066HD Target Data Features Typical Applications
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202GB066HD
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Untitled
Abstract: No abstract text available
Text: SEMiX 202GB066HD Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 2 Trench IGBT Modules SEMiX 202GB066HD Target Data Features Typical Applications
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202GB066HD
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202GB066HD
Abstract: No abstract text available
Text: SEMiX 202GB066HD Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 2 Trench IGBT Modules SEMiX 202GB066HD Target Data Features Typical Applications
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202GB066HD
202GB066HD
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SEMIX101GD066HDS
Abstract: No abstract text available
Text: SEMiX 101GD066HDs Absolute Maximum Ratings Symbol Conditions IGBT $ $ 4 -6 SEMiX 13 Trench IGBT Modules SEMiX 101GD066HDs Target Data Features Typical Applications
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101GD066HDs
SEMIX101GD066HDS
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Untitled
Abstract: No abstract text available
Text: SEMiX 402GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 2s Trench IGBT Modules SEMiX 402GB066HDs Target Data Features Typical Applications
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402GB066HDs
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BD3 diode
Abstract: BD3 tunnel diode BD3 diode BD3, transistor BD6 tunnel diode General Electric BD5 diode "back diode" 160 germanium transistor germanium diodes forward drop TUNNEL DIODE
Text: Germanium I BD1-7 I Diodes The G eneral Electric types 4JFB D 1-7 are germ anium back diodes which m ake use of the q u an tu m m echanical tunneling phenom enon, thereby attaining a very low forw ard voltage d rop and elim inating charge storage effects. They feature closely
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OCR Scan
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