DIODE EVP 28 Search Results

IS471F

Abstract: 229201 2N3053 transistor 3 pin IR sensor circuit 38khz relay 270r IS471F equivalent RS Components 585-983 IR Sensor receiver pair ir led modulated at 38kHz transistor BC107 pin diagram
Contextual Info: Issued November 1994 F18528 Infra-red devices Basics of photometry This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Figure 2 Geometric principles

150A 1200V IGBT MITSUBISHI

Abstract: CM75TU-24H
Contextual Info: MITSUBISHI IGBT MODULES CM75TU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC Measured M Point GwN EwN GvN EvN w N 5 - M5 NUTS E H E H K E J J TAB#110 t=0.5

BUN DIODE

Abstract: DIODE EVP 28 CM50TF-12H bup transistor
Contextual Info: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R

CM20TF-24H

Abstract: igbt 600v 20a 600v 20a IGBT
Contextual Info: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V

IGBT. CM50TF-12H

Abstract: CM50TF-12H
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

150A 1200V IGBT MITSUBISHI

Abstract: CM75TU-24H
Contextual Info: MITSUBISHI IGBT MODULES CM75TU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F G H E E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC Measured M Point GwN EwN GvN EvN w N 5 - M5 NUTS E H E H K E J J TAB#110 t=0.5

CM30TF-24H

Abstract: igbt 600V 30A
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

CM30TF-12H

Abstract: CM30TF12H igbt 300V 30A H bridge 300v 30a
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN GVN EVN EUN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GuN EwP W

laser gun

Abstract: CM75TU-24H
Contextual Info: CM75TU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six IGBTMOD U-Series Module 75 Amperes/1200 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC

all transistor

Abstract: E80276 QM30TB-24B bvp DIODE
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24B • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 750

E80276

Abstract: QM30TB-2H all transistor
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

all transistor

Abstract: E80276 QM30TF-HB
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TF-HB • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750

CM15TF-24H

Abstract: 400v 15A igbt module
Contextual Info: MITSUBISHI IGBT MODULES CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V

CM50TF-12H

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

Contextual Info: CM10AD05-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 10 Amperes/600 Volts G H H H A C H H H J K J K K S E N1 P1 OPEN OPEN OPEN

Three phase inverter CIRCUIT DIAGRAM

Abstract: Dc to 3 Phase Inverters dc to ac inverter circuit diagram inverter dc to ac 12 volt dc to 220 volt ac inverter 3 phase inverters circuit diagram igbt CM15AD05-12H
Contextual Info: CM15AD05-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 15 Amperes/600 Volts G H H H A C H H H J K J K K S E N1 P1 OPEN OPEN OPEN

600v 30a IGBT

Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
Contextual Info: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K

CM75TU-24H

Contextual Info: CM75TU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six IGBTMOD U-Series Module 75 Amperes/1200 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC

all transistor

Abstract: E80276 QM30TB-24 QM30tb
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24 • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75

CM30TF-12H

Abstract: H bridge 300v 30a igbt 200v 30a
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GuN EwP W

600v 20a IGBT

Abstract: igbt power module 1200v 20A CM20TF-24H ic tab 810
Contextual Info: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN GVN EVN EUN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V

CM15TF-24H

Abstract: 400v 15A transistor module
Contextual Info: MITSUBISHI IGBT MODULES CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN GVN EVN EUN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V

DIODE EVP 25

Abstract: IS471F
Contextual Info: SHARP IS471F IS471F OPIC Ught Detector with BitfMn Signal • Features ■ Olitine Dimensions m > J| rrocessng AS wrcw Lm I Tur I m Iì J a ILu ì ugm IMownon synoni Unit : mm 1. Im pervious to external disturbing lights due to light m odulation system 2. Built-in pulse driver circuit and sync,

20-25kHz

Abstract: CM20AD05-12H CM20AD
Contextual Info: CM20AD05-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 20 Amperes/600 Volts G H H H A C H H H J K J K K S E N1 P1 OPEN OPEN OPEN