DIODE ESM Search Results

ESM diode 4120

Abstract: onduleur DIODE REDRESSEMENT G233
Contextual Info: STC 0 S G S-THGMSON "V I 7^237 0002337 3 _ O THOMSON-CSF DIVISION SEM ICO NDUCTEURS ESM 4120 59C 023 37 D “J * ô & * ¿ 3 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE FEATURES *F AV Soft recovery with low recovery charge. Fully characterised for operation up to 20 kHz.

diode ESM 15

Abstract: ESM diode 4120 038N CB-428
Contextual Info: STC 0 I S G S-THGMSON "V 7 ^ 2 3 7 0002337 3 f ~ _ O ESM 4120 T H O M S O N -C S F DIVISION SEMICONDUCTEURS 59C 023 37 D “J * ô & * ¿ 3 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE FEATURES *F AV Soft recovery with low recovery charge.

c1237

Abstract: FI6 diode 4116 DIODE REDRESSEMENT QQGE333 onduleur variateur lh2000 7-T21 Thomson-CSF diode
Contextual Info: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,

diode lt 0236

Abstract: thomson 237 DT 2 SiC IPM 237 thomson
Contextual Info: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,

KDI attenuator

Abstract: GT-0206 MICRO-D CONNECTORS strobe trigger GT attenuator voltage controlled
Contextual Info: NEW PRODUCT ANNOUNCEMENT GT Series PIN Diode Attenuators Description: Features: The GT-0206 Series PIN Diode Attenuator is an 8/10 bit digitally controlled voltage variable attenuator optimized for minimum insertion loss while maintaining maximum attenuation range. Using new linearization techniques

MICRO-D CONNECTORS

Abstract: GT attenuator voltage controlled KDI attenuator GT attenuator kdi step attenuator
Contextual Info: NEW PRODUCT ANNOUNCEMENT GT Series PIN Diode Attenuators Description: Features: The GT-0206 series PIN Diode attenuator is an 8 bit digitally controlled voltage variable attenuator optimized for minimum insertion loss while maintaining maximum attenuation range. Using new linearization techniques

GT attenuator voltage controlled

Abstract: micro-d connectors GT061832 GT attenuator GT-0618 KDI attenuator 3210f
Contextual Info: NEW PRODUCT ANNOUNCEMENT GT Series PIN Diode Attenuators Description: Features: The GT-0618 Series PIN Diode Attenuator is an 8/10 bit digitally controlled voltage variable attenuator optimized for minimum insertion loss while maintaining maximum attenuation range. Using new linearization techniques

PV-Module

Contextual Info: PV-Module Table of Contents Concentrators, Bypass Diode. 3 Crystalline, Junction Box. 4

Contextual Info: £ Z J SGS-THOMSON UD SI3 [ilLE©T^®iDiSi TMM5712 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break­ down voltage, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection

d-215 diode

Abstract: esm 856
Contextual Info: CALIFORNIA MICRO DEVICES ►►►►► PAC DN010 P/ACTIVE SCH O TTKY DIODE MEMORY BUS TERM INATOR Features A pplications • • ♦ • • • • Provides proper bus te rm in a tio n independent o f card loading conditions Schottky diode technology; fast tu rn on

LT9E

Contextual Info: E R D 75 2 oa "f K : O utline D raw ings FAST RECOVERY DIODE • 4$ ^ : Features • Planer chip • V 7 Y l) 1 i ' il) — Soft recovery type • Stud mounted : Applications • Switching power supplies • Free-wheel diode • Others. M axim um Ratings and Characteristics

ESM5045DV

Abstract: SCHEMATIC smps
Contextual Info: ESM5045DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE •

NPN DARLINGTON POWER MODULE

Abstract: P093A ESM3045DV
Contextual Info: ESM3045DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE •

ESM4045DV

Contextual Info: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM4045DV

Contextual Info: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ ESM4045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT

Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC

KDS121E

Abstract: transistor ESM 30
Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC

ESM3045DV

Contextual Info: ESM3045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ic Lb 598 d

Abstract: ESM6045DV
Contextual Info: FZ7 SGS-THOMSON *> 7 # ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: SEMICONDUCTOR TECHNICAL DATA BAV70T SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package • Low Forward Voltage • Fast Reverse Recovery Time • Small Total Capacitance ESM. Vp=0.9V Typ. . t„=1.6ns(Typ.).

Contextual Info: ESM5045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

esm2012dv

Contextual Info: ESM2012DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM4045DV

Abstract: 0322AG
Contextual Info: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: ESM3045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE