DIODE ESD E6 Search Results

diode marking code cz

Abstract: marking code e6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PESD5V0S1BA Low capacitance bi-directional ESD protection diode in SOD323 Product specification 2004 Mar 22 Philips Semiconductors Product specification Low capacitance bi-directional ESD protection diode in SOD323 PESD5V0S1BA

Contextual Info: BAT66. Silicon Schottky Diode • Power rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 " ,   , ! ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BAS52. Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration

Contextual Info: BAT165. Silicon Schottky Diode • Medium current Schottky rectifier diode • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Miniature plastic package for surface mounting SMD BAT165  ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BAT240. Silicon Schottky Diode • Rectifier Schottky diode for telecommunication and industrial applications • High reverse voltage • For power supply applications • For clamping and protection in high voltage applications BAT240A 3 D 1 D 2 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

sot363 marking DATE code

Abstract: BCR108S IEC61000-4-4 ESD5V0S5US-E6727 ESD5V0S5US
Contextual Info: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)

ESD5V0S5US-E6727

Contextual Info: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)

Contextual Info: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)

composition of material used in zener diode

Abstract: IEC-1000-4-2
Contextual Info: RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 1.6 + − 0.1 E61 5 (4) 0.5 0.5 1.0 + − 0.1 zConstruction Silicon epitaxial planar 0.5 + − 0.05 1.2 + − 0.1 1.6 + − 0.1 zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. 0.22 + − 0.05

65 diode 1N

Abstract: IEC-1000-4-2 RSA6.1J4
Contextual Info: RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 1.6 + − 0.1 E61 5 (4) 0.5 0.5 1.0 + − 0.1 zConstruction Silicon epitaxial planar 0.5 + − 0.05 1.2 + − 0.1 1.6 + − 0.1 zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. 0.22 + − 0.05

aurix

Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by

IEC-61000-4-2

Contextual Info: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN zExternal dimensions Unit : mm zApplication Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 zFeatures 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.

6.1EN

Abstract: IEC-61000-4-2
Contextual Info: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN !External dimensions Units : mm !Application Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 !Features 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.

composition of material used in zener diode

Abstract: IEC-61000-4-2
Contextual Info: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN !External dimensions Units : mm !Application Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 !Features 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.

diode e61

Abstract: ROHM 1SR159-200 ROHM 200V 200mA DIODE 110v zener 10w
Contextual Info: ESD Protection diode Silicon Epitaxial Planer RSA6.1EN Characteristic Peak Pulse-1(tp=10X1000µs) Peak Pulse Power-2(tp=8X20µs) DIMENSION (UNIT:mm) Limits 30W Ppk 200W Junction temperature Tj 150˚C Storage temperature Tstg -55~150°C 0.9±0.1 2.0±0.2

SOt323 marking code 6X

Abstract: INFINEON diode MARK 22 bat62-02l E6327 Application
Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-08S 6 4 3 D 2 D 1 D 1 2 2 1 BAT62-09S 4 5 D 1 1 1 BAT62-07W BAT62-07L4 D 2 6 D 3 1 2 D 2 D 1 D 2 2 4 5 3 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!

DIN 6784

Contextual Info: BAT17. Silicon Schottky Diode • For mixer applications in VHF/UHF range • For high-speed switching application BAT17 BAT17-04 BAT17-04W 3 1 BAT17-05 BAT17-05W 3 2 BAT17-06W 3 D 1 D 2 D 1 1 2 1 BAT17-07 3 D 2 2 4 D 1 D 2 1 2 3 D 1 1 D 2 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

sot323 marking code A.C

Contextual Info: BAT17. Silicon Schottky Diode • For mixer applications in VHF/UHF range • For high-speed switching application BAT17 BAT17-04 BAT17-04W 3 1 BAT17-05 BAT17-05W 3 2 BAT17-06W 3 D 1 D 2 D 1 1 2 1 BAT17-07 3 D 2 2 4 D 1 D 2 1 2 3 D 1 1 D 2 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

CM1499-E6DE

Abstract: DFN-12 MO-229C mobile camera dfn
Contextual Info: Issue X-1 CM1499-E6DE 6-Channel LCD and Camera EMI Filter Array with ESD Protection Features Product Description • The CM1499-E6DE is a six channel pi-style EMI filter array with ESD protection, which integrates six filters C-R-C in small form factor 0.50mm pitch, DFN package. The CM1499-E6DE has component values of

CM1499-E6DE

Abstract: DFN-12 MO-229C CM1499 DFN-12 MARKING A0
Contextual Info: 6-Channel LCD and Camera EMI Filter Array with ESD Protection CM1499-E6DE Features Product Description • The CM1499-E6DE is a 6-channel pi-style EMI filter array with ESD protection that integrates six filters C-R-C into a small form factor 0.50mm pitch, DFN

Contextual Info: 6-Channel LCD and Camera EMI Filter Array with ESD Protection CM1499-E6DE Features Product Description • The CM1499-E6DE is a 6-channel pi-style EMI filter array with ESD protection that integrates six filters C-R-C into a small form factor 0.50mm pitch, DFN

diode ESD E6

Abstract: CM1408-06DE CM1408-06 CM1408-E6 MO-229C TDFN-12 cm1408
Contextual Info: CM1408-06/E6 6-Channel LCD and Camera EMI Filter Array with ESD Protection Features Applications • • • • • • • • • • Six channels of EMI filtering with integrated ESD protection Pi-style EMI filters in a capacitor-resistor-capacitor C-R-C network

STS 75 SOT23

Abstract: marking BSs sot23 E6327 Q62702-S612 STS SOT
Contextual Info: BSS 139 SIPMOS Small-Signal Transistor ● VDS 250 V ● ID 0.04 A ● RDS on 100 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;

TRANSISTOR BSP 149

Abstract: sot 223 marking code BSP SIPMOS Q67000-S071 C 029 Transistor E6327 35GN
Contextual Info: BSP 149 SIPMOS Small-Signal Transistor ● VDS 200 V ● ID 0.48 A ● RDS on 3.5 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 149 Q67000-S071 E6327: 1000 pcs/reel