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    DIODE EQUIVALENT T25 4 Search Results

    DIODE EQUIVALENT T25 4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    DIODE EQUIVALENT T25 4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd diode marking a6

    Abstract: A2 diode smd 125OC BAS16X DIODE SMD T25 diode SMD MARKING CODE A6 diode t25 4 A6 SMD MARKING CODE A20
    Text: Formosa MS SMD Switching Diode Array BAS16X List List. 1 Package outline. 2 Features. 2


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    BAS16X MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 smd diode marking a6 A2 diode smd 125OC BAS16X DIODE SMD T25 diode SMD MARKING CODE A6 diode t25 4 A6 SMD MARKING CODE A20 PDF

    SMD MARKING CODE A20

    Abstract: A2 diode smd BAS70WS
    Text: Formosa MS SMD Schottky Barrier Diode BAS70WS List List. 1 Package outline. 2 Features. 2


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    BAS70WS MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 SMD MARKING CODE A20 A2 diode smd BAS70WS PDF

    A2 diode smd

    Abstract: BAT54WS
    Text: Formosa MS SMD Schottky Barrier Diode BAT54WS List List. 1 Package outline. 2 Features. 2


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    BAT54WS MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 A2 diode smd BAT54WS PDF

    diode smd marking jy

    Abstract: sot-23 JV A2 diode smd 100OHM BAS116 BAV170 BAV199 BAW156 marking code jy O SMD
    Text: Formosa MS SMD Switching Diode BAS116/BAW156/BAV170/BAV199 List List. 1 Package outline. 2


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    BAS116/BAW156/BAV170/BAV199 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 diode smd marking jy sot-23 JV A2 diode smd 100OHM BAS116 BAV170 BAV199 BAW156 marking code jy O SMD PDF

    A2x smd

    Abstract: diode t25 4 A6 smd diode a6 marking 820 smd rectifier A2 diode smd smd diode code a2 smd transistor marking A2 100OHM MMBD2836 MMBD2838
    Text: Formosa MS SMD Switching Diode MMBD2836/MMBD2838/MMBD7000 List List. 1 Package outline. 2


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    MMBD2836/MMBD2838/MMBD7000 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 A2x smd diode t25 4 A6 smd diode a6 marking 820 smd rectifier A2 diode smd smd diode code a2 smd transistor marking A2 100OHM MMBD2836 MMBD2838 PDF

    diode t25 4 a7

    Abstract: marking code jg SMD diode DIODE smd marking A4 marking code JG SMD smd diode A4 smd diode marking jc sot23 diode t25 4 A6 smd diode marking a6 smd diode code A4 smd diode marking code a2
    Text: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List. 1 Package outline. 2


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    BAL99/BAV99/BAW56/BAV70 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 diode t25 4 a7 marking code jg SMD diode DIODE smd marking A4 marking code JG SMD smd diode A4 smd diode marking jc sot23 diode t25 4 A6 smd diode marking a6 smd diode code A4 smd diode marking code a2 PDF

    SMD MARKING CODE A20

    Abstract: smd schottky diode sot363 marking A20 diode SCHOTTKY sot 363 marking code CD A2 diode smd marking 820 smd rectifier BAT54ADW BAT54BRW BAT54CDW BAT54SDW
    Text: Formosa MS BAT54ADW/CDW/SDW/BRW/TW SMD Schottky Barrier Diode List List. 1 Package outline. 2


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    BAT54ADW/CDW/SDW/BRW/TW MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 SMD MARKING CODE A20 smd schottky diode sot363 marking A20 diode SCHOTTKY sot 363 marking code CD A2 diode smd marking 820 smd rectifier BAT54ADW BAT54BRW BAT54CDW BAT54SDW PDF

    st smd diode marking code

    Abstract: a20 Schottky diode st SMD MARKING CODE A20 st smd diode marking code C smd diode schottky code marking l2 A2 diode smd 100OHM BAT54AT BAT54CT BAT54ST
    Text: Formosa MS SMD Schottky Barrier Diode BAT54T / AT / CT / ST List List. 1 Package outline. 2


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    BAT54T MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 st smd diode marking code a20 Schottky diode st SMD MARKING CODE A20 st smd diode marking code C smd diode schottky code marking l2 A2 diode smd 100OHM BAT54AT BAT54CT BAT54ST PDF

    SRD12

    Abstract: 500C BYV255
    Text:  APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE B. Rivet I - INTRODUCTION Fig.1 : Electrical and thermal models of a diode The behaviour of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing


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    MMBZ5221BW

    Abstract: MMBZ5222BW MMBZ5223BW
    Text: Formosa MS Zener Diode MMBZ5221BW THRU MMBZ5267BW List List. 1 Package outline. 2


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    MMBZ5221BW MMBZ5267BW MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. MMBZ5222BW MMBZ5223BW PDF

    Untitled

    Abstract: No abstract text available
    Text: M54HC155 M74HC155 SGS-THOMSON m DUAL 2 TO 4 LINE DECODER 3 TO 8 LINE DECODER HIGHSPEED tpD = 12 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS


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    M54HC155 M74HC155 54/74LS155 M54HC155F1 M74HC155M1 M74HC155B1R M74HC155C1R M54/74HC155 M54/M74HC155 PDF

    1084CE

    Abstract: 1084-CE
    Text: A JTi ,3803 - ’M i - lïnSftS B aiw M k sP 5 “ ¡¡¡§ H P A H A s vcc Small Outline Ceramic Hybrid Optocoupler High Speed TTL [ V - 4 VO 3G N D E F “ <£> 1,65mm Ì _ Device Isocom Ltd supplies high reliability devices for applications requiring an operating tem­


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    BS9000 RH-45% 1084CE 1084-CE PDF

    Untitled

    Abstract: No abstract text available
    Text: HV53 HV54 Supertex inc. 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier HV53 HV5308DJ HV5308PJ HV54 HV5408DJ HV5408PJ


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    32-Channel HV5308DJ HV5308PJ HV5408DJ HV5408PJ MIL-STD-883 HV5308PG HV5308X RBHV5308DJ HV5408PG PDF

    diode t25 4 j5

    Abstract: No abstract text available
    Text: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420


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    SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) diode t25 4 j5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Optical disc ICs PWM Driver for CD and MD Players BH6505K T h e B H 6 5 0 5 K is a 4 -c h a n n e l P W M d riv e r d e s ig n e d fo r C D a n d M D p la y e r m o to r an d a c tu a to r d rives. T h e p o w e r M O S F E T output stag e allows for applications with low p ow er consum ption. This 1C also has a c h arge pum p circuit


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    BH6505K f-176 1711D PDF

    2MB1100NC-120

    Abstract: 2MBI1OONC-120 2mb1100 2mb1100n tl 271 2MBI100NC-120 IT0-22
    Text: S d llG B T ^ ^ IL — JU N '> u - "j + 's V W r Ni^lJ—X j 2MBI100NC-120 X j 1200V / 100A/ 2 flilifl : Features High Speed Switching > *? • J± 8 *R j Voltage Drive • te - r > ? ? ? Low Inductance Module Structure : Applications • i — ^ IE W jE H >'< — ?


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    2MBI1OONC-120 200V/100A/ J94/J94) 2MB1100NC-120 2MBI1OONC-120 2mb1100 2mb1100n tl 271 2MBI100NC-120 IT0-22 PDF

    taser circuit

    Abstract: 808 nm 100 mw SLD300 SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3
    Text: , V J I N Ï I_S L D 3 2 3 X T High Power Density 1 W Laser Diode D escription Unit : mm Package O utline The SLD 323X T is a high power, gain-guided laser diode produced by M OCVD m eth od *1. C om pared to the SLD 300 Series, this laser diode has a high brightness


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    SLD323XT SLD323XT SLD300 600mW 800mV taser circuit 808 nm 100 mw SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 PDF

    Si515

    Abstract: No abstract text available
    Text: d r i& t n ik l G B • * a x T ^ i ^ i L — " j T 's ' f W - f N '> J U n M y ’J - X j 2 M B 1 1 N C - 1 2 IJ - X ' j 1200V/100A/ 2 ffliifi : Features • y f H i g h Speed Switching • J±8*Rj Voltage Drive Low Inductance Module Structure ■E3& : Applications


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    200V/100A/ J94/J94) Si515 PDF

    TIL 815

    Abstract: SLD300 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3 diode T3 Marking 802B04
    Text: I_ SLD322XT High Power Density 0.5 W Laser Diode Description Package Outline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d *1. C om pared to the SLD 300 Series, this laser diode has a high brightness


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    SLD322XT SLD322XT SLD300 TIL 815 SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3 diode T3 Marking 802B04 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74HC4518P/F TC74HC4520P/F TC74HC4518P/F DUAL BCD COUNTER TC74HC4520P/F DUAL 4-BIT BINARY COUNTER T h e T C 7 4 H C 4 5 1 8 and T C 7 4 H C 4 5 2 0 a r e h i g h speed CMOS D U A L B C D / 4 - B I T B I N A R Y C O U N T E R f a b r i c a t e d w i t h s i l i c o n g a t e C 2MOS tech n o logy.


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    TC74HC4518P/F TC74HC4520P/F TC74HC4520P/F 4518B/4520B) TC74HC4520 PDF

    PQ05R

    Abstract: PQ12RH11 PQ05RH11 PQ05RH1 PQ09RH1 PQ09RH11 PQ12RH1 PQ05RH11 Series
    Text: P Q 05R H 1/P Q 05R H 11 Series 4-Terminal Low Power-Loss Voltage Regulators PQ0 5 RH1/11 Series • 1.5A Output, Low Power-Loss Voltage Regulators G en eral D escription The Sharp’s PQ 05R H 1/PQ 05R H 1 1 series 4terminal low power-loss voltage regulators


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    PQ05RH1 /PQ05RH11 PQ05R PQ05RH1/PQ05RH11 PQ05RH11 001327D PQ12RH11 PQ09RH1 PQ09RH11 PQ12RH1 PQ05RH11 Series PDF

    BC 104k capacitor

    Abstract: 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30
    Text: V T C INC 9388929 TT D D I ^300^5^ DDGIMGM 4 V T C I NC 99D 01404 VA2713 T *7 9 -0 7 -2 0 DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES AND BUFFER P R E LIM IN A R Y LSP FAMILY DATA SHEETS FEATURES • Low Offset Voltage: 0.5mV


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    VA2713 75MHz 100MHz VA2713 20KHz 50MHz. 30MHz 30MHz. 10KHz 100KHZ BC 104k capacitor 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30 PDF

    DIODE T25 4 Jo

    Abstract: DIODE T25 4 bo DIODE T25-4-bo
    Text: N AMER PHILIPS/DISCRETE bbS3TBl D011011 S BR210 SERIES □ bE D T - 2 S - O G - BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak


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    D011011 BR210 O-220AC BR210â b53T31 DD11021 bbS3T31 OD11QSS DIODE T25 4 Jo DIODE T25 4 bo DIODE T25-4-bo PDF

    diode t25 4 L9

    Abstract: b196 transistor I444 transistor f151 transistor b196
    Text: EVL32-O55Ü20A ✓ \ ° 7 — ^ ì > = L — )V L-JU POW ER T R A N S IST O R M ODULE : Features • I5W0E High Voltage • 7 >J — ifc-f U =t — KÆ3K • A S O ^ /a I ' • iëfâiïïi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type


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    EVL32-O55 19S24^ diode t25 4 L9 b196 transistor I444 transistor f151 transistor b196 PDF