DIODE EQUIVALENT T25 4 Search Results

Contextual Info: SF H 221 SIEMENS Silicon Differential Photodiode Dimensions in inches mm .012 (.3) Max.-1 .570(14,5) .491 (12.5) Radiar« sensitive area h. 134(3.4) 118(3.0) 0.236(6.0) 0.228 5.0 i 0.326 0.32 (8.3) .200 r (5.08) -1 ÿ| (a.o> L«-3 0.020 (.5) 0.016 (.4) Anode A /

Contextual Info: M54HC155 M74HC155 SGS-THOMSON m DUAL 2 TO 4 LINE DECODER 3 TO 8 LINE DECODER HIGHSPEED tpD = 12 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

1084CE

Abstract: 1084-CE
Contextual Info: A JTi ,3803 - ’M i - lïnSftS B aiw M k sP 5 “ ¡¡¡§ H P A H A s vcc Small Outline Ceramic Hybrid Optocoupler High Speed TTL [ V - 4 VO 3G N D E F “ <£> 1,65mm Ì _ Device Isocom Ltd supplies high reliability devices for applications requiring an operating tem­

Contextual Info: HV53 HV54 Supertex inc. 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier HV53 HV5308DJ HV5308PJ HV54 HV5408DJ HV5408PJ

diode t25 4 j5

Contextual Info: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420

Contextual Info: H V53 H V54 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Inform ation Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier 44 Lead Quad Plastic Gullwing Die 44 J-Lead Quad Ceramic Chip Carrier

Contextual Info: Optical disc ICs PWM Driver for CD and MD Players BH6505K T h e B H 6 5 0 5 K is a 4 -c h a n n e l P W M d riv e r d e s ig n e d fo r C D a n d M D p la y e r m o to r an d a c tu a to r d rives. T h e p o w e r M O S F E T output stag e allows for applications with low p ow er consum ption. This 1C also has a c h arge pum p circuit

2MB1100NC-120

Abstract: 2MBI1OONC-120 2mb1100 2mb1100n tl 271 2MBI100NC-120 IT0-22
Contextual Info: S d llG B T ^ ^ IL — JU N '> u - "j + 's V W r Ni^lJ—X j 2MBI100NC-120 X j 1200V / 100A/ 2 flilifl : Features High Speed Switching > *? • J± 8 *R j Voltage Drive • te - r > ? ? ? Low Inductance Module Structure : Applications • i — ^ IE W jE H >'< — ?

taser circuit

Abstract: 808 nm 100 mw SLD300 SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3
Contextual Info: , V J I N Ï I_S L D 3 2 3 X T High Power Density 1 W Laser Diode D escription Unit : mm Package O utline The SLD 323X T is a high power, gain-guided laser diode produced by M OCVD m eth od *1. C om pared to the SLD 300 Series, this laser diode has a high brightness

Si515

Contextual Info: d r i& t n ik l G B • * a x T ^ i ^ i L — " j T 's ' f W - f N '> J U n M y ’J - X j 2 M B 1 1 N C - 1 2 IJ - X ' j 1200V/100A/ 2 ffliifi : Features • y f H i g h Speed Switching • J±8*Rj Voltage Drive Low Inductance Module Structure ■E3& : Applications

TIL 815

Abstract: SLD300 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3 diode T3 Marking 802B04
Contextual Info: I_ SLD322XT High Power Density 0.5 W Laser Diode Description Package Outline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d *1. C om pared to the SLD 300 Series, this laser diode has a high brightness

DIODE T25 4 Jo

Abstract: cd photo diode
Contextual Info: SONY SLD322XT High Pow er Density 0.5 W Laser Diode D escription Package O utline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d "1. C om pared lo the SLD 300 Series, Ihis laser diode has a high brightness

Contextual Info: TC74HC4518P/F TC74HC4520P/F TC74HC4518P/F DUAL BCD COUNTER TC74HC4520P/F DUAL 4-BIT BINARY COUNTER T h e T C 7 4 H C 4 5 1 8 and T C 7 4 H C 4 5 2 0 a r e h i g h speed CMOS D U A L B C D / 4 - B I T B I N A R Y C O U N T E R f a b r i c a t e d w i t h s i l i c o n g a t e C 2MOS tech n o logy.

PQ05R

Abstract: PQ12RH11 PQ05RH11 PQ05RH1 PQ09RH1 PQ09RH11 PQ12RH1 PQ05RH11 Series
Contextual Info: P Q 05R H 1/P Q 05R H 11 Series 4-Terminal Low Power-Loss Voltage Regulators PQ0 5 RH1/11 Series • 1.5A Output, Low Power-Loss Voltage Regulators G en eral D escription The Sharp’s PQ 05R H 1/PQ 05R H 1 1 series 4terminal low power-loss voltage regulators

BC 104k capacitor

Abstract: 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30
Contextual Info: V T C INC 9388929 TT D D I ^300^5^ DDGIMGM 4 V T C I NC 99D 01404 VA2713 T *7 9 -0 7 -2 0 DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES AND BUFFER P R E LIM IN A R Y LSP FAMILY DATA SHEETS FEATURES • Low Offset Voltage: 0.5mV

smd diode A2

Abstract: A2 DIODE SMD CODE MARKING smd diode code a6 smd diode a6 SMD DIODE A6 t SOT-23 smd diode marking a6 DIODE SMD T25 A2 diode smd DIODE SMD A6 smd diode code A2
Contextual Info: Formosa MS SMD Switching Diode BAS16 List List. 1 Package outline. 2 Features. 2

smd diode marking jc sot23

Abstract: smd diode code A4 smd diode A4 DIODE smd marking A4 marking code jg SMD diode smd diode a7 smd diode marking JC marking code JG SMD smd diode marking A7 SOT-23 smd diode A2
Contextual Info: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List. 1 Package outline. 2

smd diode marking a6

Abstract: A2 diode smd 125OC BAS16X DIODE SMD T25 diode SMD MARKING CODE A6 diode t25 4 A6 SMD MARKING CODE A20
Contextual Info: Formosa MS SMD Switching Diode Array BAS16X List List. 1 Package outline. 2 Features. 2

SMD MARKING CODE A20

Abstract: A2 diode smd BAS70WS
Contextual Info: Formosa MS SMD Schottky Barrier Diode BAS70WS List List. 1 Package outline. 2 Features. 2

1.5KE transil diode

Abstract: Schaffner load dump generator Schaffner NSG AN554 diode t25 4 E5 1.5ke transil TRANSIL BZW50-22 equivalent transil diode equivalent BZW04
Contextual Info: AN554 APPLICATION NOTE CHOICE OF PROTECTION IN AUTOMOTIVE APPLICATIONS CLASSICAL TOPOLOGY INTRODUCTION This paper describes a protection schematic based on discrete components, together with a general method of choosing the components to suppress the surge effects on automotive modules.

mrf154 amplifier

Abstract: MRF154 Mrf154 M
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

A2 diode smd

Abstract: BAT54WS
Contextual Info: Formosa MS SMD Schottky Barrier Diode BAT54WS List List. 1 Package outline. 2 Features. 2

diode smd marking jy

Abstract: sot-23 JV A2 diode smd 100OHM BAS116 BAV170 BAV199 BAW156 marking code jy O SMD
Contextual Info: Formosa MS SMD Switching Diode BAS116/BAW156/BAV170/BAV199 List List. 1 Package outline. 2

diode smd marking jx

Contextual Info: Formosa MS SMD Switching Diode BAS116/BAW156/BAV170/BAV199 List List. 1 Package outline. 2