LL60P
Abstract: 1N60P 20PF
Text: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage
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LL60P
1N60P
LL60P
1N60P
20PF
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LL60P
Abstract: 1N60P 20PF
Text: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage
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LL60P
1N60P
LL60P
1N60P
20PF
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LL60P
Abstract: 1N60P 20PF
Text: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage
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LL60P
1N60P
LL60P
1N60P
20PF
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1N60P
Abstract: 20pf
Text: ST 60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage dc
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1N60P
40MHz
1N60P
20pf
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20pf
Abstract: 1N60P
Text: ST 60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage dc
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1N60P
40MHz
20pf
1N60P
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ST60P
Abstract: 20pf 1N60P 1N60S
Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm
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ST60P,
ST60S
1N60P
1N60S
DO-35-1
40MHz
ST60P
ST60P
20pf
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ST60P
Abstract: 20pf 1N60P 1N60S
Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm
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ST60P,
ST60S
1N60P
1N60S
DO-35-1
40MHz
ST60P
ST60P
20pf
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1N60P
Abstract: ST60P 1N60S 20PF
Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1
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ST60P,
ST60S
1N60P
1N60S
DO-35-1
DO-35
ST60P
ST60P
1N60S
20PF
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1N5988B
Abstract: 1N6006B 1N5994B 1N5995B 1N6020B
Text: 1N5985B-1 thru 1N6031B-1 Available on commercial versions Axial-Leaded 500 mW Zener Diodes Screening in reference to MIL-PRF-19500 available DESCRIPTION The popular 1N5985B-1 thru 1N6031B-1 series of 0.5 watt Zener voltage regulators provides a selection from 2.4 to 200 volts in 10%, 5%, 2% and 1% tolerances. These axial-leaded, glass,
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1N5985B-1
1N6031B-1
MIL-PRF-19500
1N6031B-1
DO-35
1N59851
T4-LDS-0228,
1N5988B
1N6006B
1N5994B
1N5995B
1N6020B
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mll34 footprint
Abstract: SOD80 footprint DO-213AA 1N5985 1N5985UR 1N6031 BZV55 MLL5985 1N6009BUR
Text: 1N5985UR thru 1N6031BUR or MLL5985 thru MLL6031B Surface Mount 500 mW Zener Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N5985UR thru 1N6031BUR (or MLL5985 thru MLL6031B) series of 0.5 watt Zener Voltage Regulators provides selection from 2.4 to 200 volts in
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1N5985UR
1N6031BUR
MLL5985
MLL6031B)
DO-213AA
mll34 footprint
SOD80 footprint
1N5985
1N6031
BZV55
1N6009BUR
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zener diode nomenclature
Abstract: T4-LDS-0228 bzx55 sod80
Text: 1N5985BUR-1 thru 1N6031BUR-1 Available on commercial versions Surface Mount 500 mW Zener Diodes Screening in reference to MIL-PRF-19500 available DESCRIPTION The popular 1N5985BUR-1 thru 1N6031BUR-1 series of 0.5 watt Zener voltage regulators provides a selection from 2.4 to 200 volts in 10%, 5%, 2% and 1% tolerances. These glass
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1N5985BUR-1
1N6031BUR-1
MIL-PRF-19500
1N6031BUR-1
DO-213AA
T4-LDS-0228-1,
zener diode nomenclature
T4-LDS-0228
bzx55 sod80
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SOD80 footprint
Abstract: DO-213AA 1N5985 1N5985UR-1 1N6031 BZV55 MIL-PRF19500 MLL5985-1
Text: 1N5985UR-1 thru 1N6031BUR-1 or MLL5985-1 thru MLL6031B-1 METALLURGICALLY BONDED GLASS SURFACE MOUNT 500 mW Zener Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N5985UR-1 thru 1N6031BUR-1 (or MLL5985-1 thru MLL6031B-1) series of 0.5 watt Zener Voltage Regulators provides selection from 2.4 to 200
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1N5985UR-1
1N6031BUR-1
MLL5985-1
MLL6031B-1)
DO213AA
DO-213AA
SOD80 footprint
DO-213AA
1N5985
1N6031
BZV55
MIL-PRF19500
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Untitled
Abstract: No abstract text available
Text: 3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified
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3VD182600YL
3VD182600YL
O-92DT-3L
1N60C.
250uA
250uA
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Untitled
Abstract: No abstract text available
Text: 3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
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3VD156600YL
3VD156600YL
O-92DT-3L
1N60SS.
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Untitled
Abstract: No abstract text available
Text: 3VD212600YL 3VD212600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD212600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon 3 epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability.
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3VD212600YL
3VD212600YL
O-251
1N60A.
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/503E
MIL-PRF-19500/503D
1N6073
1N6081,
MIL-PRF-19500.
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JAN1N4148
Abstract: JANS1N4148 JANS1N4148-1 JANS1N6642 DO35 JAN1N4148-1 MIL-PRF19500 Three bond harry ALL DIODE Equivalent list
Text: Spring/Summer 1998 All You Ever Wanted to know about Metallurgical Bonds by Harry Spence requiring a metallurgical bond for the very metallurgy techniques. Commonly molded popular JAN1N4148 types. There was and pressed parts are bronze bearings or much discussion about what constituted a
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JAN1N4148
JANS1N4148
JANS1N4148-1
JANS1N6642
DO35
JAN1N4148-1
MIL-PRF19500
Three bond
harry
ALL DIODE Equivalent list
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Diode Equivalent 1N60
Abstract: diode 1n60 1N60 MOS 1N60
Text: 3VD169600YL 3VD169600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD169600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced
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3VD169600YL
3VD169600YL
O-92-3L
Diode Equivalent 1N60
diode 1n60
1N60 MOS
1N60
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Untitled
Abstract: No abstract text available
Text: 3VD173600YL 3VD173600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD173600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced
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3VD173600YL
3VD173600YL
O-92-3L
5245dies/wafer
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1N60P
Abstract: 20PF
Text: ST 60 P SILICON SCHOTTKY BARRIER DIODE Silicon Schottky Barrier Diode Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. max. 1.90 Cathode M ark m ax. 0.520 Glass case JEDEC DO-35 Dimensions in mm
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1N60P
DO-35
20PF
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DIODE SD51
Abstract: 12v zener diode JEDEC 1N SD51
Text: 1N6097 1N6098 SD51 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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1N6097
1N6098
DIODE SD51
12v zener diode JEDEC 1N
SD51
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1NU7
Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Text: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l
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DDD0317
1N599
1N599A
1N600A
1N602
1N602A
1N603
1NS03A
1N604
1N604A
1NU7
1N2487
1N1492
1N2508
IN400T
1N1711
equivalent to 1N4001
1N1490
1N2484
1N20B2
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DIODE SD51
Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Text: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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150-C
1N6097
1N6098
DIODE SD51
5817 SOD-123
bly 83
Motorola Switchmode
SD51
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cq 636 g diode
Abstract: DUAL PRE-AMPLIFIER FOR TAPE RECORDER TA7658P 1n60 toshiba 1s1555 diode Diode Equivalent 1N60 silicon diode 1S1555 Germanium audio Amplifier diagram transistor audio preamplifier circuit diagram PRE-AMPLIFIER FOR TAPE RECORDER
Text: DUAL PREAMPLIFIER FOR TAPE RECORDER Unit in mm The TA7658P is a dual preamplifier with ALC Automatic Level Control designed for use in a record/playback amplifier of tape recorder. It is suitable for a stereo set and a radio cassette recorder. . DIP 14 PIN (Dual In-Line Package)
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TA7658P
1747T
TA7658P
1S1555
cq 636 g diode
DUAL PRE-AMPLIFIER FOR TAPE RECORDER
1n60 toshiba
1s1555 diode
Diode Equivalent 1N60
silicon diode 1S1555
Germanium audio Amplifier diagram
transistor audio preamplifier circuit diagram
PRE-AMPLIFIER FOR TAPE RECORDER
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