DIODE ED 1B Search Results

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

panasonic date code e l

Abstract: MATSUA VCO
Contextual Info: ID« % Approved « i fp Checked « pp Checked ÌB U /T Y P E & $1 jjt/S T R U C T U R E GaP ^ /O U T L IN E Ptf Condition STANDARDS K G aP /R ed Light Em itting Diode(GaP) 7F #3 / Indicators Ü 3 /Attached ^ 1 I fp IFDC Vr 70 150 25 4 mW mA mA V Topr -25 ~

Contextual Info: SCHOTTKY BARRIER DIODE FCQ10A04 i0A /40v FEATURES o Sim ila r to T O -2 2 0 A B C ase o F u lly M olded Isolatio n o D u a l Diodes - Cathode Comm on o L o w F orw ard V o lta g e Drop o L o w P ow er L oss, H igh E fficien cy o H igh Su rg e C apability o W ire-Bond ed technology

Contextual Info: 1N941 thru 1N946B Microsemi Corp. / SANTA ANA, CA Tftedtoáe&tpetis SCOTTSDALE, A l For more information call: 6 0 2 9 41-6300 FEA TU R ES 11.7 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • Z E N E R V O L T A G E 1 1 .7 V ± 5 % • 1N 9 4 1B , 943B, 944B. 945B HAVE J A N , J A N T X , J A N T X V , A N D -1 Q U A LIFIC A T IO N S

Contextual Info: A P T 1001 R 1B V F R • R A d van ced I r j po w er Te c h n o l o g y " 1000 v 11 a 1.1 ooq POWER MOS V FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect,

FDC634P

Abstract: SOIC-16 4 78G
Contextual Info: FAIRCHILD N ovem ber 1997 M IC D N D U C T D R - FDC634P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: DATA SHEET NEC OCMOS FET PS7122A-1 B,-2B, PS7122AL-1 B,-2B 6, 8-PIN DIP OCMOS FET 1-ch, 2-ch OCMOS FET DESCRIPTION The P S 7122A -1B , -2B and P S 7122A L-1B , -2B are solid state relays con tain ing a G aA s LED on the light em itting side (input side) and norm ally close (N.C.) co n ta ct M O S F E T s on the o u tp u t side.

Ai203-ceramic

Abstract: oms 450 MDD250-12N1 ai203ceramic E72873 LF400A
Contextual Info: • MbfibEEb 0001721 Tbb * I X Y n ix Y S MDD250 Diode Modules ITav = 2 x 2 9 0 A VRRM= 600-1600 V V rm V|WM Type V V Version 1 700 900 1300 1500 1700 600 800 1200 1400 1600 MDD260-06N1 MDD250-08N1 MDD2S0-12N1 MDD2S0-14N1 MDD2S0-16N1 Threaded sp acer for higher Anode/

NDS9948

Contextual Info: February 1996 N NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has

Contextual Info: DATA SHEET O C M O S FET PS7241 -1B 4-PIN SOP 400 V NORMALLY CLOSE OCMOS FET 1-ch OCMOS FET DESCRIPTION T he P S 7 2 4 1 -1 B is a solid state relay co n ta in in g a G aA s LED on the light em ittin g sid e (in pu t side) and norm ally clo se (N.C.) co n ta ct M O S F E Ts on the o u tp u t side.

Contextual Info: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1

Contextual Info: • MbflbS2b GGGlbbS 307 M I X Y niXYS MCC56 ITav=2 x 60 A MCD56 VRRM=400-1800 v Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 1900 i 1 > > > Vw V mm V 400 600 800 1200 1400 1600 1800* Type Version 1 B MCC56-06ÌO1 MCC56-08ÌO1 MCC56-12io1

NDS8961

Contextual Info: FAIRCHILD MICDNDUCTQ R tm NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel Features enhancement mode power field effect - 3.1 A, 30 V. Rds on = 0.1 £2 @ VGS = 10 V R dsion) = 0.15 £2 @ VGS = 4.5 V. • High density cell design for extremely low RDS(0N).

785-500

Abstract: it 785-500 NDS9947
Contextual Info: F e b ru a ry 1 9 9 6 N NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e P -C hannel en hance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is

Contextual Info: CS8130 Semiconductor Corporation Multi-Standard Infrared Transceiver Features General Description • Adds IR port to standard UART • IrDA, HPSIR, ASK CW & TV remote compatible • 1200bps to 115kbps data rate • Programmable Tx LED power • Programmable Rx threshold level

cd4090

Abstract: CD 4090 datesheet CD4001N cd4001a ic cd4001 f s c datesheet J283 CD 4013 ICAN6532
Contextual Info: ICAN-6532 Fundamentals of Testing COS/MOS Integrated Circuits A typical CMOS IC test sequence is shown in Fig. 2. by J. Flood This N ote describes the techniques em ­ ployed in testing RCA COS/MOS devices to assure their adherence to data-sheet specifi­

ULS2003

Abstract: ULS2013H883 ULS2013H-883 ULS2002 ULS2004 ULS2000 a9734 CERAMIC LEADLESS CHIP CARRIER ULS-2004 250mAT
Contextual Info: • 'im i H IG H -V O L T A G E , H IG H -C U B K E \ T D A B U N G T O N A BRA X S Comprised of seven silicon NPN Darlington power drivers on a common monolithic substrate, Series ULS2000EK, ULS2000H, and ULS2000R arrays drive relays, solenoids, magnetic print hammers,

Contextual Info: 7*^ 12 4 3 TRANSISTOR MODULE 00021 37 4AA QCA30B/QCB3QA40/60 UL;E76102(M QCA30B and QCB30A are dual Darlin­ 94max gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

fds6930

Contextual Info: F/\IRCHII_0 M IC D N D U C T O R July 1998 tm FDS6930A Dual N-Channel, Logic Level, PowerTrench MOSFET G eneral D escription Features These N-Channel Logic Level MOSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been

Complementary MOSFET Half Bridge

Abstract: NDS8858H
Contextual Info: J u ly 1 9 9 6 N NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide

Contextual Info: IPA086N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ 0&. Y I9 ,- 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5

Contextual Info: IPB065N15N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R ,?>=1H฀-( .&- Y I9 )+( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#

Contextual Info: IPB031NE7N3 G TM  3 Power-Transistor Product Summary Features ?> Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀ ฀3?>F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y I9 ) 6 Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (&