biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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PDF
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Untitled
Abstract: No abstract text available
Text: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for
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FFPF60B150DS
O-220F
FFPF60B150DSTU
O-220F
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FFPF60B150DS
Abstract: No abstract text available
Text: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for
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Original
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FFPF60B150DS
O-220F
FFPF60B150DS
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PDF
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Untitled
Abstract: No abstract text available
Text: FFAF60A150DS FFAF60A150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-3PF Applications 1 2 3 Modulation Damper • Modulation + Damper diode designed for
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FFAF60A150DS
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Untitled
Abstract: No abstract text available
Text: Comchip Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G N5 Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Silicon planar power Zener diode. -The Zener voltages are graded according to the international E24 standard, smaller voltage
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1N5221B-G
1N5267B-G
DO-35
012ounce,
33gram
-2X10
-4X10
10X10
QW-BZ001
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PDF
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C1060
Abstract: bookham diode 2 Wavelength Laser Diode C1060 Series b60c Nd-yag B60C-1060-01 emitter "1060 nm"
Text: Data Sheet Preliminary 60W 10xxnm High Power Bare Laser Diode Bar B60C-10xx-01 The Bookham B60C-10xx-01 50% fill factor laser diode bar has been designed to provide the increased brightness and reliability required for direct diode applications and as replacement for Nd:YAG lasers. The proprietary E2 front mirror
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10xxnm
B60C-10xx-01
B60C-10xx-01
1060nm
900-1060nm
21CFR
BH13574
C1060
bookham diode
2 Wavelength Laser Diode
C1060 Series
b60c
Nd-yag
B60C-1060-01
emitter "1060 nm"
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PDF
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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PDF
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Aspheric Lens TO Can
Abstract: 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780
Text: Optima Laser Diode Optics Cost Effective Lenses for Collimating and Focusing Laser Diodes Collimating and focusing a laser diode is perhaps the most critical prerequisite in any laser diode application. While the characteristics of a laser diode might be ideal for your
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635nm
850nm.
01JAN01
Aspheric Lens TO Can
310-0065-780
305-0065-780
336 305
336-0808-830
lens laser diode
HL6312G
785nm
780nm laser diode
300-0355-780
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PDF
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OL3200N-5
Abstract: laserdiode m 140
Text: E2V0014-37-X1 ¡ electronic components OL3200N-5 LASER DIODES OL3200N-5 1.3 mm High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL3200N-5 is a 1.3 mm, high-power laser diode DIP module with a single-mode fiber pigtail. The high-performance OKI laser diode achieved a single-mode fiber output of over 5 mW.
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E2V0014-37-X1
OL3200N-5
OL3200N-5
14-pin
laserdiode m 140
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OL3200N-5
Abstract: No abstract text available
Text: E2V0014-37-X1 O K I electronic components QL3200N-5_ 1.3 High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL3200N-5 is a 1.3 high-pow er laser diode DIP m odule w ith a single-m ode fiber pigtail. The high-perform ance OKI laser diode achieved a single-m ode fiber output of over 5 mW.
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OCR Scan
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E2V0014-37-X1
OL3200N-5_
OL3200N-5
Hermetically-sealed/14-pin
QL3200N-5
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PDF
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Untitled
Abstract: No abstract text available
Text: E2V0014-37-X1 O K I electronic components OL32QON-5_ 1.3 jim High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL3200N-5 is a 1.3 J im , high-power laser diode DIP module with a single-mode fiber pigtail. The high-performance OKI laser diode achieved a single-mode fiber output of over 5 mW.
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OCR Scan
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E2V0014-37-X1
OL32QON-5_
OL3200N-5
14-pin
OL3200N-5
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PDF
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
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te555
Abstract: 808nm LAR23P400
Text: 808nm 400W QCW Lensed Laser Diode Array Part Number: LAR23P400 E2 PACKAGE • Packaged 13-Bar Lensed Laser Diode Array · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS
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808nm
LAR23P400
13-Bar
785-1064nm
------400W
C-02/02
te555
LAR23P400
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. POLARITY L2 E F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)
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E25A2CPS,
E25A2CPR
E25A2CPS
100mA
100mA,
100mS
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PDF
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laser diode array
Abstract: LAR23P400
Text: Industrial Microphotonics Company 808nm 400W QCW Lensed Laser Diode Array Part Number: LAR23P400 E2 PACKAGE • Packaged 13-Bar Lensed Laser Diode Array · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL
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Original
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808nm
LAR23P400
13-Bar
785-1064nm
laser2000
B-10/01
laser diode array
LAR23P400
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PDF
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E25A2CPR
Abstract: E25A2CPS
Text: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. E POLARITY L2 F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)
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E25A2CPS,
E25A2CPR
E25A2CPS
100mA
100mA,
100mS
E25A2CPR
E25A2CPS
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PDF
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500W
Abstract: LAR23P500
Text: 940nm 500W QCW Lensed Laser Diode Array Part Number: LAR23P500 E2 PACKAGE • Packaged 13-Bar Lensed Laser Diode Array · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS
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Original
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940nm
LAR23P500
13-Bar
785-1064nm
------500W
C-02/02
500W
LAR23P500
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PDF
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LAR23P500
Abstract: australia heat sink b1099
Text: Industrial Microphotonics Company 500W QCW Lensed Laser Diode Array Part Number: LAR23P500 E2 PACKAGE • Packaged 13-Bar Lensed Laser Diode Array · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
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Original
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LAR23P500
13-Bar
785-1064nm)
laser2000
B-10/99
LAR23P500
australia heat sink
b1099
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PDF
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H24 SMD DIODE
Abstract: electrical circuit diagram reverse forward move d 12v bulb 220 supply diagram
Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.
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BDD20101213
H24 SMD DIODE
electrical circuit diagram reverse forward move d
12v bulb 220 supply diagram
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PDF
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electrical circuit diagram reverse forward move d
Abstract: H24 SMD DIODE
Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.
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Original
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BDD20101213
electrical circuit diagram reverse forward move d
H24 SMD DIODE
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PDF
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Alternator Diode
Abstract: No abstract text available
Text: SEMICONDUCTOR E25A2CS, E25A2CR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 Repetitive Peak Reverse Voltage : VRRM=200V. D1 Average Forward Current : IF AV =25A. E30A2CS (+ Type) C1
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E25A2CS,
E25A2CR
E30A2CS
E30A2CR
Alternator Diode
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PDF
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electrical circuit diagram reverse forward move d
Abstract: H24 SMD DIODE
Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.
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Original
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BDD20101213
electrical circuit diagram reverse forward move d
H24 SMD DIODE
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PDF
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