Transistor NEC 30
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode
|
Original
|
PDF
|
|
TRANSISTOR K 314
Abstract: NEC semiconductor
Text: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING UNIT: mm chip dumper diode in collector to emitter and zener diode in
|
Original
|
PDF
|
2SD2463
2SD2463
C11531E)
TRANSISTOR K 314
NEC semiconductor
|
2SD1843
Abstract: diode dumper
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to
|
Original
|
PDF
|
2SD1843
2SD1843
diode dumper
|
ce1a3q
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
|
Original
|
PDF
|
|
CE1F3P
Abstract: D1617
Text: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
|
Original
|
PDF
|
cycle50
CE1F3P
D1617
|
NEC semiconductor
Abstract: C11531E dumper diode dumper
Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter as protect
|
Original
|
PDF
|
C11531E)
NEC semiconductor
C11531E
dumper
diode dumper
|
NEC diode
Abstract: transistor marking 7D 2SD1695 C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and
|
Original
|
PDF
|
2SD1695
2SD1695
NEC diode
transistor marking 7D
C11531E
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA
|
Original
|
PDF
|
|
triac zd 607
Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Text: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes
|
Original
|
PDF
|
The32-246622
H1-O03EA0-0510020NM
triac zd 607
transistor C5586
bridge rectifier sanken rb40
rb40 bridge rectifier
rb60 bridge rectifier
ZD 607 - triac
CTPG2F
CTX12S
Toshiba transistor c4468
STA524A
|
schematic diagram tv sony 21 trinitron
Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV
|
Original
|
PDF
|
KV-EF34M80
RM-951
SCC-U28D-A
NA324-M3
A80LPD10X)
SBX3005-01
RM-951)
schematic diagram tv sony 21 trinitron
cxa2139s
CXA2130S
IC cxa2139s
ic CXA2130S
C3807 transistor datasheet
sony ic cxa2130s
free CXA2139S
c3807 power transistor
STV5112
|
2SC5858
Abstract: transistor c5858 c5858 2sc5570 C5446 S2055n 2sc 5587 2SC5588 2SC5587 2SC5859
Text: 1 Horizontal – Deflection – Output Power Transistors February 2005 TOSHIBA CORPORATION Semiconductor Company Discrete Semiconductor Division Transistors DP0540034_01 2 High Voltage TR for TV / Monitor 1. Progressive/ High Vision/Digital TV Part Number
|
Original
|
PDF
|
DP0540034
2SC5716
2SC6041
2SC5857
2SC5858
2SC5859
2SC5997
2SC5748
2SC5588
2SC5588(
2SC5858
transistor c5858
c5858
2sc5570
C5446
S2055n
2sc 5587
2SC5588
2SC5587
2SC5859
|
IC-3479
Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits
|
Original
|
PDF
|
PA1428A
PA1428A
PA1428AH
IC-3479
IC-8359
uPA1428
transistor array high speed
uPA1428AH
IEI-1213
PA1428
MF-1134
PA1428AH
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
dumper
Abstract: darlington transistor with built-in temperature 2SD1693 dumper diode
Text: NPN SILICON DARLINGTON TRANSISTOR 2SD1693 DESCRIPTION The 2SD1693 is a darlington transistor built-in a zener diode at PACKAGE DIMENSIONS in millimeters inches B-C and a dumper diode at E-C. 8.5 MAX. (0.334 MAX.) It is suitable for use to operate from IC without predriver, such as
|
OCR Scan
|
PDF
|
2SD1693
2SD1693
100m200m
dumper
darlington transistor with built-in temperature
dumper diode
|
|
|
diode dumper
Abstract: 2SD1630
Text: NPN SILICON DARLINGTON POWER TRANSISTOR 2SD1630 D E S C R IP T IO N The 2 SD 1 6 3 0 is a darlington transistor built-in a zener diode at P A C K A G E D IM E N S IO N S B-C and a dumper diode at E-C. in millimeters inches It is suitable for use to operate from IC w ithout predriver, such
|
OCR Scan
|
PDF
|
2SD1630
2SD1630
01IWVS
diode dumper
|
2SB1093
Abstract: 2SD1579 dumper diode
Text: NPN SILICON DARLINGTON TRANSISTOR 2SD1579 DESCRIPTION The 2SD1579 is a darlington transistor including a dumper diode at E-C. PACKAGE DIMENSIONS It is suitable for general driving use, such as hammer, solenoid, in millimeters inches lamp or motor. FEATURES
|
OCR Scan
|
PDF
|
2SD1579
2SD1579
2SB1093.
2SB1093
dumper diode
|
1000C
Abstract: 2SB1149 diode dumper
Text: NEC DESCRIPTION PNP SILICON DARLINGTON TRANSISTOR 2SB1149 The 2SB1149 is a darlington transistor built-in dumper diode PACKAGE DIMENSIONS at E-C. in millimeters inches It is suitable for use to operate from IC without predfiver, such 8.5 MAX. (0.334 MAX.)
|
OCR Scan
|
PDF
|
2SB1149
2SB1149
1000C
1000-lB
1000C
diode dumper
|
Tf 227
Abstract: 2SB1093 2SD1579 dumper diode
Text: PIMP SILICON DARLINGTON TRANSISTOR 2SB1093 DESCRIPTION FEATURES The 2SB1093 is a darlington transistor including a dumper diode at C-E. It is suitable for general driving use, such as hammer, solenoid, lamp or motor. • High DC currentijain. • High current capability, wide ASO and low collector saturation
|
OCR Scan
|
PDF
|
2SB1093
2SB1093
2SD1579.
VCC--50
Tf 227
2SD1579
dumper diode
|
dumper
Abstract: 2SB1318 diode dumper bu500
Text: NEC D ES C R IP TIO N PNP SICICON TRANSISTOR 2SB1318 The 2SB1318 is a darlington transistor built-in dumper diode at E-C. PACKAG E D IM E N S IO N S in millimeters inches It is suitable for use to operate from IC w ithout predriver, such as hammer driver.
|
OCR Scan
|
PDF
|
2SB1318
2SB1318
VCC--40V
dumper
diode dumper
bu500
|
d 1698
Abstract: d1698 2SD1698 motor printer Transistor 2SD1698 dumper
Text: NPN SILICON TRANSISTOR 2SD1698 D E S C R IP T IO N The 2S D 1698 is NPN silicon epitaxial darlington transistor PAC KAG E D IM E N S IO N S designed for pulse m otor, printer driver, solenoid driver. FEATURES • High DC Current gain. • Includes a dumper diode at E-C.
|
OCR Scan
|
PDF
|
2SD1698
2SD1698
d 1698
d1698
motor printer
Transistor 2SD1698
dumper
|
diode ssil
Abstract: 2SD1939 PA33 dumper diode KAG TRANSISTOR
Text: NEC NPN SILICON DARLINGTON TRANSISTOR 2SD1939 D E S C R IP TIO N The 2SD 1939 is a darlington transistor including a dumper diode PAC KAG E D IM E N S IO N S at E-C . in m illim èters inches It is suitable fo r general driving use, such as hammer, solenoid,
|
OCR Scan
|
PDF
|
2SD1939
2SD1939
diode ssil
PA33
dumper diode
KAG TRANSISTOR
|
2SD1692
Abstract: dumper diode
Text: IM F f /N P N SILICON DARLINGTON TRANSISTOR / D E S C R IP TIO N 2SD1692 The 2S D 1692 is a darlington transistor built-in dumper diode PAC KAG E D IM E N S IO N S at E-C. in millimeters inches It is suitable fo r use to operate from IC w ith o ut predriver, such
|
OCR Scan
|
PDF
|
2SD1692
2SD1692
fo-11
dumper diode
|
2SD985
Abstract: 2SB794 2SB795 2SD986
Text: PNP SILICON DARLINGTON POWER TRANSISTORS 2SB794.2SB795 D E S C R IP TIO N The 2SB794, 2SB795 are darlington transistors built-in dumper PA C K A G E D IM E N S IO N S diodes at C-E. in millimeters inches They are suitable for use operating from 1C w ithout predriver,
|
OCR Scan
|
PDF
|
2SB794
2SB795
2SB794,
2SB795
2SD985,
2SD986
2SB00
2SD985
|
2SD986
Abstract: 2SD985 2SB795 2SB794 Nec 2sd986
Text: NPN SILICON DARLINGTON POWER TRANSISTORS 2SD985.2SD986 DESCRIPTION The2SD985, 2SD986 are darlington transistors built-in dumper PACKAGE DIMENSIONS diodes at E-C. They are suitable fo r use to operate from 1C w ith o u t predriver, in millimeters inches 8.5 MAX.
|
OCR Scan
|
PDF
|
2SD985
2SD986
2SD985,
2SD986
2SB794,
2SB795
1000-lB
2SB794
Nec 2sd986
|
