DIODE DS 135. 12A Search Results

SiA419DJ

Abstract: S09-1397-Rev
Contextual Info: SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12a 0.066 at VGS = - 1.5 V - 12 a 0.113 at VGS = - 1.2 V - 10.6

74620

Abstract: SiA419DJ SiA419DJ-T1-GE3
Contextual Info: New Product SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12 a 0.066 at VGS = - 1.5 V - 12a 0.113 at VGS = - 1.2 V

SiA419DJ

Abstract: SiA419DJ-T1-GE3
Contextual Info: New Product SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12 a 0.066 at VGS = - 1.5 V - 12a 0.113 at VGS = - 1.2 V

Contextual Info: SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12a 0.066 at VGS = - 1.5 V - 12 a 0.113 at VGS = - 1.2 V - 10.6

76407p

Contextual Info: HUF76407P3 în t e is il D a ta S h e e t O c to b e r 1999 F ile N u m b e r 4706.3 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power M OSFET Packaging Features JEDEC TQ-220AB • Ultra Low O n-Resistance ' SO URCE DRAIN GATE rDS ON = 0 .0 9 2 ft, VGS = 10V

Si5481DU

Abstract: Si5481DU-T1-GE3 marking code bc
Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET

Contextual Info: New Product SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12 a 0.066 at VGS = - 1.5 V - 12a 0.113 at VGS = - 1.2 V

Contextual Info: AP6680AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance D BVDSS 30V RDS ON Simple Drive Requirement Fast Switching Characteristic 11m ID G 12A S D Description D D Advanced Power MOSFETs from APEC provide the

U405D

Abstract: STU405D 2525l
Contextual Info: S T U405D S amHop Microelectronics C orp. Nov,24 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 16A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )

stu404d

Abstract: U404D TU404D
Contextual Info: S T U404D S amHop Microelectronics C orp. Oct, 03 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )

Contextual Info: S T U404D S amHop Microelectronics C orp. S ep 14 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A

stu407D

Abstract: STU407DH STU407 407DH STU-407DH 407D U407DH TO-252-4L
Contextual Info: S T U407DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m Ω )

STU404D

Abstract: U404D Stu404
Contextual Info: STU404D Green Product SamHop Microelectronics Corp. Sep 14 2006 ver1.1 Dual Enhancement Mode Field Effect Transistor N and P Channel (N-Channel) PRODUCT SUMMARY RDS(ON) ( m Ω ) VDSS ID 40V 16A (P-Channel) PRODUCT SUMMARY Max VDSS ID -40V -12A RDS(ON) ( m Ω )

6680agm

Abstract: AP6680AGM ap6680A 6680ag 6680A APEC
Contextual Info: AP6680AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 11mΩ ID G 12A S D Description D D Advanced Power MOSFETs from APEC provide the

350v mosfet nchannel

Abstract: FDP12N35 FDPF12N35
Contextual Info: UniFET TM FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 12A, 350V, RDS on = 0.38Ω @VGS = 10 V

SI5481DU

Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • TrenchFET Power MOSFET • New thermally Enhanced PowerPAK®

SI5481DU

Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET

Contextual Info: MITSUBISHI Neh POWER MOSFET F L 1 0 K M -1 2 A HIGH-SPEED SWITCHING USE FL10KM -12A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 600V

F12N10L

Abstract: f12N08L f12n08 f12n10 RFM12N08L RFP12N10L RFM10N12L RFM10N15L RFM12N10L RFP10N12L
Contextual Info: h a r r R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L i s N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features TO-204AA BOTTOM VIEW • 10A, 120V and 150V • fDS(ON) = O-3« □RAIN (FLANGE) SOURCE • Design Optimized for 5V Gate Drives

FL10KM-12A

Contextual Info: MITSUBISHI Nch POWER MOSFET FL10KM-12A •§;> >>•+. :W> ^ »ft fin*' slljü \e cl 1 *p- "TVi'S's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FL10KM-12A OUTLINE DRAWING Dimensions in mm 10 ± 0.3 • 1 0 V D R IV E • V d s s .6 0 0 V

SI5481DU

Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET

Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET

Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET

Contextual Info: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET