Untitled
Abstract: No abstract text available
Text: DMG301NU 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features This new generation MOSFET is designed to minimize the on-state resistance RDS(ON and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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DMG301NU
DS36226
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Untitled
Abstract: No abstract text available
Text: DMG301NU 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 25V 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +25°C 0.26A 0.23A • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
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DMG301NU
AEC-Q101
DS36226
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Untitled
Abstract: No abstract text available
Text: Product specification DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -30V 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V • • • • • • ID TA = 25°C -3.7A -3.3A -2.7A Low Input Capacitance
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DMG3401LSN
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: Product specification DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Low On-Resistance Low Input Capacitance Fast Switching Speed
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DMG3407SSN
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A NEW PRODUCT -20V Low On-Resistance Low Input Capacitance
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DMG3413L
AEC-Q101
DS35051
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Untitled
Abstract: No abstract text available
Text: DMG302PU 25V P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features ID TA = +25°C -0.17A -0.15A • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed Description • Small Surfaced Mount Package
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DMG302PU
AEC-Q101
DS36227
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g34 mosfet
Abstract: DMG3401LSN-7 marking G34
Text: DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -30V 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V • • • • • • ID TA = 25°C -3.7A -3.3A -2.7A Low Input Capacitance Low On-Resistance Low Input/Output Leakage
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DMG3401LSN
AEC-Q101
DS35502
g34 mosfet
DMG3401LSN-7
marking G34
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Untitled
Abstract: No abstract text available
Text: DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Description and Applications • • • Low On-Resistance Low Input Capacitance
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DMG3407SSN
AEC-Q101
DS35135
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Untitled
Abstract: No abstract text available
Text: DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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DMG3407SSN
AEC-Q101
DS35135
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marking g33
Abstract: DMG3413L g33 sot23
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3413L
AEC-Q101
DS35051
marking g33
DMG3413L
g33 sot23
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Untitled
Abstract: No abstract text available
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3413L
DS35051
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Untitled
Abstract: No abstract text available
Text: DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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DMG3407SSN
AEC-Q101
DS35135
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marking G33
Abstract: No abstract text available
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance Low Input Capacitance 95mΩ @ VGS = -4.5V 3.0A Fast Switching Speed 130mΩ @ VGS = -2.5V 2.5A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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DMG3413L
AEC-Q101
DS35051
marking G33
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DMG3415U-13
Abstract: "marking code" 34P sot23 marking code YW DIODE marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
DMG3415U-13
"marking code" 34P sot23
marking code YW DIODE
marking 34P sot23
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marking 34P sot 23
Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 42.5mΩ @ VGS = -4.5V • 53mΩ @ VGS = -2.5V • 71mΩ @ VGS = -1.8V
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DMG3415U
AEC-Q101
OT-23
J-STD-020D
DS31735
marking 34P sot 23
DMG3415U
"marking code" 34P sot23
dmg3415u-7
J-STD-020D
marking code 34P
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Untitled
Abstract: No abstract text available
Text: DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features ID TA = +25°C 4A 3A 2A RDS ON V(BR)DSS 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V 30V • Low On-Resistance: Low Gate Threshold Voltage Low Input Capacitance
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DMG3402L
AEC-Q101
DS36077
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
DS31735
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Untitled
Abstract: No abstract text available
Text: DMG3420U N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)
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DMG3420U
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
DS31867
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marking 34P sot23
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
marking 34P sot23
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
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DMG3420
Abstract: marking device g31 DMG3420U-7 DMG3420U g31 sot 23 SOT23 component marking code 5a N-CHANNEL MOSFET 30V 2A SOT-23 marking g31 sot23
Text: DMG3420U NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)
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DMG3420U
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
DS31867
DMG3420
marking device g31
DMG3420U-7
DMG3420U
g31 sot 23
SOT23 component marking code 5a
N-CHANNEL MOSFET 30V 2A SOT-23
marking g31 sot23
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DMG3415UQ-7
Abstract: DMG3415U-7 DS31735 marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
621-DMG3415U-7
DMG3415U-7
DMG3415UQ-7
DMG3415U-7
marking 34P sot23
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DMG3415U
Abstract: marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V
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DMG3415U
AEC-Q101
OT-23
J-STD-020D
DS31735
DMG3415U
marking 34P sot 23
dmg3415u-7
YM 294
J-STD-020D
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"marking code" 34P sot23
Abstract: marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
"marking code" 34P sot23
marking 34P sot23
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