NJW4710
Abstract: NJW4710VE1
Text: NJW4710 4ch Laser Diode Driver for Blue Laser Diode •GENERAL DESCRIPTION NJW4710 is a laser diode driver for the operation of a grounded blue laser diode. It is suited to drive a blue laser diode, because it is operated by split power supply. It includes 4 channels current amplifiers
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NJW4710
NJW4710
NJW4710VE1
200MHz
500MHz
SSOP24-E1
375TYP
NJW4710VE1
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NJW4710
Abstract: NJW4710VE1
Text: NJW4710 4ch Laser Diode Driver for Blue Laser Diode •GENERAL DESCRIPTION NJW4710 is a laser diode driver for the operation of a grounded blue laser diode. It is suited to drive a blue laser diode, because it is operated by split power supply. It includes 4 channels current amplifiers
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NJW4710
NJW4710
NJW4710VE1
200MHz
500MHz
SSOP24-E1
375TYP
NJW4710VE1
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QRS0680T30
Abstract: DIODE ED 26
Text: QRS0680T30 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 www.pwrx.com Fast Recovery Diode Module 724 925-7272 Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy
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QRS0680T30
QRS0680T30
DIODE ED 26
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Untitled
Abstract: No abstract text available
Text: HYBRID I.C.S "Hi-Net" n ic R ic o n Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general
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ZHLA0651
ZHMA0425
MA425
ZHMA042S
MA426
ZHLA0652
ZHLA0653
ZHMA0427
MA427
ZHLA0654
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mc2850
Abstract: 1F marking
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2850 FOR GENERAL SWITCHING APPLICATION _ SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2850 is a super mirti package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode,it is designed for general switching application.
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MC2850
MC2850
SC-70
1F marking
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA82-14A
0004B31
ESJA82-ODA
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA89-12A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA89-12A
H04-004h03
D00MA23
ESJA82-CDA
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diode 18kv
Abstract: No abstract text available
Text: ESJA83 i 6kV, 18kV, 20kV : Outline Drawings HIGH VOLTAGE SILICON DIODE E S JA 8 3 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. •4#-^ : Features • Supersmall size
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ESJA83
ESJA83-16
ESJA83-18
ESJA83-20
I95t/R89)
diode 18kv
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Untitled
Abstract: No abstract text available
Text: „ a SRDA3.3-6 3 * > F I \ / I T F P jpP-j H •■ March 29, 1999 RailClamp Low Capacitance TVS Diode Array & SRDA05-6 TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to
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SRDA05-6
TEL805-498-2111
12x16
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BUK637-400A
Abstract: BUK637-400B in 4008 diode LP250 00a0B
Text: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly
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BUK637-400A
BUK637-400B
T-31-IS-
BUK637
-400A
-400B
in 4008 diode
LP250
00a0B
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Untitled
Abstract: No abstract text available
Text: se MIKRDN SKliP 192 GPL 170 - 475 CTV Absolute Maximum Ratings Symbol | Conditions 11 IGBT & Inverse Diode Vces Operating DC link voltage Voc9! Theatstnk —25 °C lc IGBT & Diode T i3 AC, 1 min. Viso)4 1 T heatsink —25 °C If Theater* - 2 5 °C; tp c 1 ms
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Untitled
Abstract: No abstract text available
Text: jp P j " " March 26, 1999 R aiiclamp Low Capacitance TVS Diode Array S R D A 3 .3 -4 THRU S R D A 1 2 -4 TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SRDA series
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TEL805-498-2111
12x16
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PDF
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n SKiiP 232 GH 120 - 210 CTV Absolute Maximum Ratings Symbol | Conditions11 Values Units 1200 900 200 - 4 0 . . . + 150 3000 51 200 400 1450 10,5 V IGBT & Inverse Diode V ces Vcc 9 lc T i 3» V is o ! 41 If I fm Ifsm I2! Diode) Operating DC link voltage
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ESJC03-09
Abstract: ESJC03
Text: E S J C 3 9 k v S ± 'J &J±S£'M?-4=t—K : O utline D raw ings HIGH VOLTAGE SILICO N DIODE ESJC03U, ESJC03 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.
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ESJC03
ESJC03&
eSTS30S3
l95t/R89
ESJC03-09
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SiS 6801
Abstract: 1SS305
Text: T — $ • y — N_ 7 .4 " ; 3 - > ? ÿ ' j 3 > Silicon Switching Diode 1SS305 i 7 J ls 7 t ° - K Silicon Epitaxial Diode High Speed Switching 4# • mm i t r IJ y K I C ffl t L T ^ i i T ’ -To -.m t) o § i Ä ^ $ l > o
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1SS305
SiS 6801
1SS305
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Untitled
Abstract: No abstract text available
Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C
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12N100U1
12N100AU1
O-247
IXGH12N100U1
IXGH12N100AU1
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2SK1778
Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SJ236
2SK1776
2SJ299
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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2SK1778
Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SJ236
2sj177
pf0030 hitachi
2SJ299
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
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2SK1778
Abstract: 2SK1776 2SJ236 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094 2SK1777
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SK1776
2SJ236
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
2SK1777
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2SK1778
Abstract: 2SK1776 2SJ235 2SJ175 2SJ176 2SJ182 2SJ236 2SJ237 2SK1093 2SK1094
Text: HITACHI 12 DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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PDF
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2SK1778
Abstract: 2SJ236 2Sk1776 2SK1777 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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2SK2007
2SK1669
2SK1515
2SK1516
2SK1517
2SK1518
2SK1947
2SK1519
2SK1520
2SK1521
2SK1778
2SJ236
2Sk1776
2SK1777
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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PDF
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2sj2 high voltage p channel mosfet
Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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PDF
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2SK1778
Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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OCR Scan
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SK109
2SJ236
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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PDF
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Untitled
Abstract: No abstract text available
Text: DALLAS m w sEiii€0N!Diict0R 9 DS9503 ESD Protection Diode with Resistors SPECIAL FEATURES SYMBOL AND CONVENTIONS • Zener characteristic with voltage snap-back to protect against ESD hits ■ High avalanche voltage, low leakage and low capacitance avoid signal attenuation
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DS9503
DS9503P
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