DIODE DII Search Results

NJW4710

Abstract: NJW4710VE1
Contextual Info: NJW4710 4ch Laser Diode Driver for Blue Laser Diode •GENERAL DESCRIPTION NJW4710 is a laser diode driver for the operation of a grounded blue laser diode. It is suited to drive a blue laser diode, because it is operated by split power supply. It includes 4 channels current amplifiers

NJW4710

Abstract: NJW4710VE1
Contextual Info: NJW4710 4ch Laser Diode Driver for Blue Laser Diode •GENERAL DESCRIPTION NJW4710 is a laser diode driver for the operation of a grounded blue laser diode. It is suited to drive a blue laser diode, because it is operated by split power supply. It includes 4 channels current amplifiers

Contextual Info: HYBRID I.C.S "Hi-Net" n ic R ic o n Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general

QRS0680T30

Abstract: DIODE ED 26
Contextual Info: QRS0680T30 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 www.pwrx.com Fast Recovery Diode Module 724 925-7272 Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy

mc2850

Abstract: 1F marking
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2850 FOR GENERAL SWITCHING APPLICATION _ SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2850 is a super mirti package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode,it is designed for general switching application.

Contextual Info: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA89-12A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

diode 18kv

Contextual Info: ESJA83 i 6kV, 18kV, 20kV : Outline Drawings HIGH VOLTAGE SILICON DIODE E S JA 8 3 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. •4#-^ : Features • Supersmall size

Contextual Info: „ a SRDA3.3-6 3 * > F I \ / I T F P jpP-j H •■ March 29, 1999 RailClamp Low Capacitance TVS Diode Array & SRDA05-6 TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to

BUK637-400A

Abstract: BUK637-400B in 4008 diode LP250 00a0B
Contextual Info: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly

Contextual Info: se MIKRDN SKliP 192 GPL 170 - 475 CTV Absolute Maximum Ratings Symbol | Conditions 11 IGBT & Inverse Diode Vces Operating DC link voltage Voc9! Theatstnk —25 °C lc IGBT & Diode T i3 AC, 1 min. Viso)4 1 T heatsink —25 °C If Theater* - 2 5 °C; tp c 1 ms

Contextual Info: jp P j " " March 26, 1999 R aiiclamp Low Capacitance TVS Diode Array S R D A 3 .3 -4 THRU S R D A 1 2 -4 TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SRDA series

Contextual Info: s e MIKRO n SKiiP 232 GH 120 - 210 CTV Absolute Maximum Ratings Symbol | Conditions11 Values Units 1200 900 200 - 4 0 . . . + 150 3000 51 200 400 1450 10,5 V IGBT & Inverse Diode V ces Vcc 9 lc T i 3» V is o ! 41 If I fm Ifsm I2! Diode) Operating DC link voltage

ESJC03-09

Abstract: ESJC03
Contextual Info: E S J C 3 9 k v S ± 'J &J±S£'M?-4=t—K : O utline D raw ings HIGH VOLTAGE SILICO N DIODE ESJC03U, ESJC03 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

SiS 6801

Abstract: 1SS305
Contextual Info: T — $ • y — N_ 7 .4 " ; 3 - > ? ÿ ' j 3 > Silicon Switching Diode 1SS305 i 7 J ls 7 t ° - K Silicon Epitaxial Diode High Speed Switching 4# • mm i t r IJ y K I C ffl t L T ^ i i T ’ -To -.m t) o § i Ä ^ $ l > o

Contextual Info: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C

2SK1778

Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SK1776 2SJ236 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094 2SK1777
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SK1776 2SJ235 2SJ175 2SJ176 2SJ182 2SJ236 2SJ237 2SK1093 2SK1094
Contextual Info: HITACHI 12 DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SJ236 2Sk1776 2SK1777 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2sj2 high voltage p channel mosfet

Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

Contextual Info: DALLAS m w sEiii€0N!Diict0R 9 DS9503 ESD Protection Diode with Resistors SPECIAL FEATURES SYMBOL AND CONVENTIONS • Zener characteristic with voltage snap-back to protect against ESD hits ■ High avalanche voltage, low leakage and low capacitance avoid signal attenuation