DIODE DF6 Search Results

DF600R12IP4D

Abstract: diode 9-f 1N6760
Contextual Info: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode

Contextual Info: SEPTEMBER 1995 DF685 DS4303-1.2 DF685 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.

DF451

Abstract: DF685
Contextual Info: DF685 DF685 Fast Recovery Diode Replaces January 2000 version, issue DS4303-2.0 DS4303-3.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability

Contextual Info: M ITEL DF685 Fast Recovery Diode SEMICONDUCTOR Supersedes Septem ber 1995 version, DS4303 - 1.2 DS4303 - 1.3 March 1998 APPLICATIONS • KEY PARAMETERS 4500V 445A Jf AV 4500A FSM 650|lC Q, VRRM S nubber Diode For GTO Applications. 5(iS FEATURES ■ Double Side C ooling.

GTO thyristor 4500V 4000A

Abstract: DS4303-1 AN4506 AN4839 AN4853 DF685
Contextual Info: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability

DF685

Abstract: DS4303-1
Contextual Info: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability

DF60AA120

Abstract: DF60AA160 DF60AA
Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF60AA120/160 UL;E76102 （M） Power Diode Module DF60AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink

tc112

Abstract: DF60AA120 DF60AA DF60AA160
Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF60AA120/160 UL;E76102 （M） Power Diode Module DF60AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink

DF60BA40

Abstract: DF60BA80 "Power Diode" bridge diode 60a
Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF60BA40/80 UL;E76102 M Power Diode Module DF60BA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink

Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF60AA120/160 UL;E76102 M Power Diode Module DF60AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink

"Power Diode"

Abstract: df60aa160 DF60AA120 TC 112 bridge diode 60a df60aa M6 transistor
Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF60AA120/160 UL;E76102 M Power Diode Module DF60AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink

DF60BA40

Abstract: DF60BA80
Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF60BA40/80 UL;E76102 （M） Power Diode Module DF60BA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink

Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF60BA40/80 UL;E76102 M Power Diode Module DF60BA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink

DF60BA80

Abstract: DF60BA40
Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF60BA40/80 UL;E76102 （M） Power Diode Module DF60BA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink

Contextual Info: DIODE THREE PHASES BRIDGE TYPE DF60AA Power Diode Module D F 60 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink

Contextual Info: @ M ITEL DF685 Fast Recovery Diode S E M IC O N D U C T O R Supersedes Septem ber 1995 version, DS4303 - 1.2 DS4303 - 1.3 March 1998 APPLICATIONS KEY PARAMETERS • Snubber Diode For GTO Applications. ^rrm 4500V ^f av 445A 'fsm 4500A Qr 650(iC trr 5^is FEATURES

Contextual Info: ATTENUATORS, PIN DIODE SERIES DF & FF “PHASE-FREE” 0.25–18 GHz GENERAL INFORMATION: KDI/Triangle’s phase free Pin diode attenuators change the amplitude of a microwave signal with matched low VSWR over the full attenuation range, and with minimum phase shift change. The units are supplied with

DF-47

Abstract: Triangle Microwave ITT CANNON MCE FF-47 Triangle Microwave Digital Attenuator 2-FF-47 DF-74 FF-18 FF-32 FF-36
Contextual Info: ATTENUATORS, PIN DIODE SERIES DF & FF “PHASE-FREE” 0.25–18 GHz GENERAL INFORMATION: KDI/Triangle’s phase free Pin diode attenuators change the amplitude of a microwave signal with matched low VSWR over the full attenuation range, and with minimum phase shift change. The units are supplied with

Contextual Info: SANSHA ELECTRIC MFG CO 37E D H 7 ^ 1 2 4 3 QQDDD77 5 H S E M J ;. ~Q DIODE MODULE SanRex Power Diode Module D F60B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor

IT 8572

Abstract: DF-45
Contextual Info: ATTENUATORS, PIN DIODE SER IES DF & FF “PHASE-FREE” 0.25-18 GHz GENERAL INFORMATION: KDI/Triangle’s phase free Pin diode attenuators change the am plitude of a microwave signal with m atched low V SW R over the full attenuation range, and with m inim um phase shift change. The units are supplied with

Contextual Info: ATTENUATORS, PIN DIODE S E R IE S DF & FF “PHASE-FREE’ 0.25-18 GHz GENERAL INFORMATION: KDIATriangle’s phase free Pin diode attenuators change the am plitude of a microwave signal with m atched low VSW R over the full attenuation range, and w ith minim um phase shift change. The units are supplied with

DD100HB160

Abstract: 1S43 DF30CA DF60A df30aa
Contextual Info: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800

Contextual Info: SANSHA ELECTRIC MFG CO J> 37E 7^=11243 0000075 T T -J P 3 -6 ? iS E iu . DIODE MODULE S a n R e x Power Diode Module D F 60A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration The mounting base of the module is electrically isolated from semiconductor

FF-47

Contextual Info: ATTENUATORS, PIN DIODE SERIES DF & FF “PHASE-FREE” 0.25-18 GHz GENERAL INFORMATION: KDI/Triangle’s p h a se free Pin diode attenuators chang e the am plitude of a m icrow ave signal with m atched low V S W R over the full attenuation range, and with minimum phase shift change. T he units are supplied with