A1378
Abstract: No abstract text available
Text: DB473S6 Ordering number : ENA1378 SANYO Semiconductors DATA SHEET DB473S6 Silicon Diffused Junction Type Diode ESD Protection Diode Features • • • • Contact discharge 13kV guarantee IEC61000-4-2 . 6-pin package containing 4 devices. Low capacitance. Best suited for touch panel protection.
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DB473S6
ENA1378
IEC61000-4-2)
A1378-4/4
A1378
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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Untitled
Abstract: No abstract text available
Text: DB4 BIDIRECTIONAL TRIGGER DIODE DO-35 Features ● VBO : 40V ● Breakover voltage range : 35 to 45V 1.0 2 26.0 MIN. 0.079(2.0) MAX 0.165 (4.2) MAX Applications 1.0 2(26.0) MIN. Functioning as a trigger diode with a fixed voltage reference, the DB4 can be used in conjunction
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DO-35
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MMBD2004
Abstract: MMBD2004A MMBD2004C MMBD2004S db6 sot-23 DB531
Text: MMBD2004/C/A/S Surface Mount Switching Diode SWITCHING DIODE 225mAMPERS 300VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications 3 Mechanical Data:
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MMBD2004/C/A/S
225mAMPERS
300VOLTS
OT-23
MIL-STD-202,
008grams
OT-23
MMBD2004A
MMBD2004
MMBD2004A
MMBD2004C
MMBD2004S
db6 sot-23
DB531
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Untitled
Abstract: No abstract text available
Text: MMBD2004/C/A/S Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 225mAMPERS 300VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications
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MMBD2004/C/A/S
225mAMPERS
300VOLTS
OT-23
MIL-STD-202,
008grams
OT-23
MMBD2004A
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Untitled
Abstract: No abstract text available
Text: MMBD2004/C/A/S Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 225mAMPERS 300VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications
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MMBD2004/C/A/S
225mAMPERS
300VOLTS
OT-23
MIL-STD-202,
008grams
OT-23
MMBD2004A
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BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
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FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
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DIODE C06-15
Abstract: DIODE C06 15 DIODE C06-13
Text: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS300R17KE3
CBB32
CBB326
223DB
2313BCBC
A3265C
C14BC
DIODE C06-15
DIODE C06 15
DIODE C06-13
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LTC4098-3.6
Abstract: SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals
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FF400R12KE3
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
LTC4098-3.6
SXA-01GW-P0.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"# 6$1B%3DE1322E14DDD &' 6 6*+,
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DDB6U25N16VR
3DE1322E14DD
2313B
32E36
26323D
32B612
4256F
223DB6
6323D
223DB64B6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM100GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM150GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
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br - b2d
Abstract: br b2d
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br - b2d
br b2d
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LTC4098-3.6
Abstract: 6n36
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM300GA120DLCS
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
LTC4098-3.6
6n36
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br b2d
Abstract: br- b2d br - b2d LTC4098-3.6
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM300GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br b2d
br- b2d
br - b2d
LTC4098-3.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C 361CB3D 1322 14DDD" 2313BCBC36134#62332 36B4"3
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DZ3600S17K3
2313BCBC
223DB
86B56
1231423567896A42BCD6EF
54B36
3567896A42BCD6
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DIACS
Abstract: DB3 DB4 diac db3 specifications DIAC 5 VOLT
Text: HITANO ENTERPRISE CORP. DB3 THRU DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
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DO-35
MIL-STD-202E,
DIACS
DB3 DB4
diac db3 specifications
DIAC 5 VOLT
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D60 DIAC
Abstract: thyristor firing circuit diac 32 V 5mA DIODE D28 Low Voltage DIACs 400C bidirectional diode thyristor diac diode db3 diac db3 specifications
Text: DB3 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
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DO-35
MIL-STD-202E,
D60 DIAC
thyristor firing circuit
diac 32 V 5mA
DIODE D28
Low Voltage DIACs
400C
bidirectional diode thyristor diac
diode db3
diac db3 specifications
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diac 32 V 5mA
Abstract: Bidirectional Diode Thyristors diac db3 specifications D60 DIAC diode d60 400C diode db3 DIAC 5 VOLT
Text: DB3 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
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DO-35
MIL-STD-202E,
diac 32 V 5mA
Bidirectional Diode Thyristors
diac db3 specifications
D60 DIAC
diode d60
400C
diode db3
DIAC 5 VOLT
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diac db3
Abstract: DIAC DO35 diac bidirectional diode diac db3 specifications
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON DIAC BIDIRECTIONAL TRIGGER DIODES GLASS PASSIVATED PNPN DEVICE DB3, DB4 DO- 35 Glass Axial Package Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be
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ISO/TS16949
100Hz)
C-120
140104E
diac db3
DIAC DO35
diac bidirectional diode
diac db3 specifications
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diac DB3 application note
Abstract: DB3 application note DIAC DO35
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON DIAC BIDIRECTIONAL TRIGGER DIODES GLASS PASSIVATED PNPN DEVICE DB3, DB4 DO- 35 Glass Axial Package Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be
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100Hz)
C-120
190402E
diac DB3 application note
DB3 application note
DIAC DO35
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12509 Revision. 3 Product Standards Schottky Barrier Diode DB5S406K0R DB5S406K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits DB4J406K in SSMini5 type package 1.6 0.2 5 Features 0.13 4 1.2 1.6 y Small reverse current IR
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TT4-EA-12509
DB5S406K0R
DB4J406K
UL-94
DB2S406
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON DIAC BIDIRECTIONAL TRIGGER DIODES GLASS PASSIVATED PNPN DEVICE DB3, DB4 DO- 35 Glass Axial Package Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be
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100Hz)
C-120
190402E
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1N4007 ZENER DIODE
Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
Text: GENERAL PRODUCTS PART No. DEVICE TYPE PACKAGE DESCRIPTION ASY TRIGGER T098 VS1 - 14/18 VOLTS, VS2 - 7/9 VOLTS, SWITCHING CURRENT 80 mA. DIAC DIAC DIAC DIAC DIAC DIAC DIAC D035 D035 D035 D 035 D 035 D035 D035 32 40 34 32 35 40 60 DIODE DIODE DIODE DIODE DIODE
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OCR Scan
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N5400
1N5401
1N5402
1N4007 ZENER DIODE
diode A14A
diode
st4 diac
diode a15a
zener db3
zener diode 1n4744
diode zener 1n4002
zener diode 5A
zener 400v
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