DIODE DB2 Search Results
DIODE DB2 Datasheets Context Search
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LDTC0520
Abstract: WTC3243 PLD10K-CH WLD3343 cables WHY5690 PLD-10 laser diode driver 200 mhz Quantum cascade laser PID1500
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WLD3343 WLD3393 14-Pin FL500 FL593 LDTCxx20 WTC3243 WTC3293 WHY5640 LDTC0520 PLD10K-CH cables WHY5690 PLD-10 laser diode driver 200 mhz Quantum cascade laser PID1500 | |
DB2F150N6SContextual Info: DB2F150N/P6S May. 2009 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optim ized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, |
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DB2F150N/P6S DB2F150N6S | |
DB2F200N6S
Abstract: DB2F200P6S DB2F200N6 DB2F200N Cathode Anode Breakdown Voltage
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DB2F200N/P6S DB2F200N6S DB2F200P6S DB2F200N6 DB2F200N Cathode Anode Breakdown Voltage | |
semiconductor
Abstract: hirect H507CH Hirect diode H400TB
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Contextual Info: SDB310WAF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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SDB310WAF OT-23F 25-AUG-10 KSD-D5C040-001 | |
Contextual Info: SDB310WA SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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SDB310WA OT-23 25-AUG-10 KSD-D5C036-001 | |
SDB310WAUFContextual Info: SDB310WAUF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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SDB310WAUF OT-323F 25-AUG-10 KSD-D5D018-001 SDB310WAUF | |
Contextual Info: SDB310WAUF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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SDB310WAUF OT-323F 25-AUG-10 KSD-D5D018-001 | |
marking db2 sot23
Abstract: SDB310WA
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SDB310WA OT-23 25-AUG-10 KSD-D5C036-001 marking db2 sot23 SDB310WA | |
SDB310WKFContextual Info: SDB310WKF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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SDB310WKF OT-23F 25-AUG-10 KSD-D5C041-001 SDB310WKF | |
Contextual Info: SDB310WK SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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SDB310WK OT-23 25-AUG-10 KSD-D5C037-001 | |
Contextual Info: SDB310WKF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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SDB310WKF OT-23F 25-AUG-10 KSD-D5C041-001 | |
SDB310WK
Abstract: marking db8 sot23
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SDB310WK OT-23 25-AUG-10 KSD-D5C037-001 SDB310WK marking db8 sot23 | |
SDB310WAF
Abstract: marking db2
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SDB310WAF OT-23F 25-AUG-10 KSD-D5C040-001 SDB310WAF marking db2 | |
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Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
OTS-16 28 0.635-02
Abstract: connector DB25 Enplas ots-16 OTS-16 2N3904 equivalent db25 socket Transistor sot-23 pin map 2N3904 BAT54 HLMP-K150
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P-K150 BAT54 OTS-16 28 0.635-02 connector DB25 Enplas ots-16 OTS-16 2N3904 equivalent db25 socket Transistor sot-23 pin map 2N3904 BAT54 HLMP-K150 | |
diode 31 DQ 05Contextual Info: DIGITALLY CONTROLLED, 360-DEG. PIN DIODE P H A S E SH IFTER S E R IE S DQ GENERAL INFORMATION: KDI/Triangle's Series DQ digitally controlled PIN-diode phase shifters vary the phase of a micro wave signal in response to a TTL-compatible logic input signal. |
OCR Scan |
360-DEG. 0-to-360-deg. DB-25P diode 31 DQ 05 | |
Triangle Microwave phase shifter
Abstract: AQ-81 phase shifter AQ24 Triangle Microwave AQ-42 triangle KDI
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OCR Scan |
360-DEG. 0-to360-deg. DB-25P Triangle Microwave phase shifter AQ-81 phase shifter AQ24 Triangle Microwave AQ-42 triangle KDI | |
marking db2
Abstract: SDB310WA SDB310WAF ir 2901 ksd2069
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SDB310WAF SDB310WA OT-23F KSD-2069-000 marking db2 SDB310WA SDB310WAF ir 2901 ksd2069 | |
Contextual Info: DB2S316 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB2S316 Product type: Schottky Barrier Diode Parameters *DEVICE=DB2S316,D * DB2S316 D model *$ .MODEL DB2S316 D + IS=477.23E-9 + N=1.0 + RS=1.6470 + IKF=1.9141 + CJO=8.4129E-12 |
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DB2S316 DB2S316 23E-9 4129E-12 90E-9 00E-6 40000E-9 | |
Contextual Info: Doc No. TT4-EA-12625 Revision. 3 Product Standards Schottky Barrier Diode DB2X20600L DB2X20600L Silicon epitaxial planar type Unit: mm For high frequency rectification DB3X206K in Mini2 type package 1.6 0.13 2 • Features 2.6 3.5 Low forward voltage VF |
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TT4-EA-12625 DB2X20600L DB3X206K UL-94 | |
Contextual Info: Doc No. TT4-EA-14319 Revision. 3 Product Standards Schottky Barrier Diode DB2G41000L DB2G41000L Silicon epitaxial planar type Unit: mm 0.6 For rectification 1.0 2 Low forward voltage VF Forward current Average IF(AV) = 1 A rectification is possible |
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TT4-EA-14319 DB2G41000L |