Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE DATASHEET CATALOG RED Search Results

    DIODE DATASHEET CATALOG RED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE DATASHEET CATALOG RED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf6217trpbf

    Abstract: AN 9525.2
    Text: PD - 95252 SMPS MOSFET IRF6217PbF HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See


    Original
    PDF IRF6217PbF -150V AN1001) IRF6217 15-Nov-2010 irf6217trpbf AN 9525.2

    Untitled

    Abstract: No abstract text available
    Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original
    PDF PD-94044A IRF5801 AN1001) IRF5801TRPBF 18-Sep-2009

    irf7494trpbf

    Abstract: 51A SO8
    Text: PD - 95349C IRF7494PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 150V 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original
    PDF 95349C IRF7494PbF AN1001) IRF7494 IRF7494 IRF7494PBF IRF7494TR IRF7494TRPBF 15-Nov-2010 51A SO8

    IRF7495

    Abstract: No abstract text available
    Text: PD - 95288 IRF7495PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original
    PDF IRF7495PbF AN1001) IRF7495PBF IRF7495TRPBF IRF7495 IRF7495TR IRF7495 15-Nov-2010

    Untitled

    Abstract: No abstract text available
    Text: Automotive Relays Plug-in Maxi ISO Relays Power Relay F7 n n Pin assignment similar to ISO 7588 part 1 Customized versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color – Special covers (e.g. notches, release features, brackets)


    Original
    PDF 24VDC 12VDC 24VDC 24VDC1)

    Untitled

    Abstract: No abstract text available
    Text: Automotive Relays Plug-in Maxi ISO Relays Power Relay F7 n n Pin assignment similar to ISO 7588 part 1 Customized versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color – Special covers (e.g. notches, release features, brackets)


    Original
    PDF 24VDC 12VDC 24VDC 24VDC1)

    SEP8506-002

    Abstract: SDP8106 SDP8406 SEP8506 infrared emitting diode
    Text: Datasheet - SEP8506-002 SEP8506-002 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original
    PDF SEP8506-002 SDP8406 SDP8106 SDP8000/8600 SEP8506 20and 20Settings/rabab/Desktop/Datasheet 20SEP8506-002 SEP8506-002 SDP8406 infrared emitting diode

    SEP8506-001

    Abstract: SDP8106 SDP8406 SEP8506 SDP8000
    Text: Datasheet - SEP8506-001 SEP8506-001 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original
    PDF SEP8506-001 SDP8406 SDP8106 SDP8000/8600 SEP8506 20and 20Settings/rabab/Desktop/Datasheet 20SEP8506-001 SEP8506-001 SDP8406 SDP8000

    SEP8505

    Abstract: T1 Package SDP8105 SDP8405 SEP8505-002 Infrared Emitting Diode
    Text: Datasheet - SEP8505-002 SEP8505-002 SEP Series GaAs Infrared Emitting Diode, T-1 Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval requirements, some products may not be available in your area.


    Original
    PDF SEP8505-002 SDP8405 SDP8105 SEP8505 20and 20Settings/rabab/Desktop/Datasheet 20SEP8505-002 T1 Package SDP8405 SEP8505-002 Infrared Emitting Diode

    AN9321

    Abstract: S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055
    Text: Harris Semiconductor No. AN9512 Harris Power MOSFETs September 1995 Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Authors: Stan Benczkowski and Wallace Williams Introduction Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid


    Original
    PDF AN9512 1-800-4-HARRIS AN9321 S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055

    AN-7514

    Abstract: fark AN-7517 RFP22N10 RFP3055 RFP45N06 RFP50N06 RFP70N06 ierc heatsink PSD1-2U
    Text: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N75 ubct ractil pect of ing werOS an tors ive duce ads) utho ) eyords nter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid


    Original
    PDF

    AN9321

    Abstract: RFP50N06 AN-7517 RFP22N10 RFP3055 RFP45N06 RFP70N06 ierc heatsink
    Text: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N95 bt actipect f ng werOS antors ve uce ads utho eyrds ter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid


    Original
    PDF

    RFD16N05

    Abstract: rfp50n06 DB223B DIODE DATABOOK RFP22N10 rfp50n06 substitute AN9321 RFP3055 RFP45N06 RFP70N06
    Text: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid drivers. In this type of application the device is simply used


    Original
    PDF

    tyco V23134-j1052-d642

    Abstract: No abstract text available
    Text: Plug-in Maxi ISO Relays Power Relay F7 n Pin assignment similar to ISO 7588 part 1 versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color – Special covers (e.g. notches, release features, brackets)


    Original
    PDF 24VDC 12VDC 24VDC1) tyco V23134-j1052-d642

    max6811

    Abstract: IRF8721 IRF8721G IRF8721TR
    Text: PD - 97119 IRF8721PbF Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low Gate Charge l Low RDS on at 4.5V VGS l Low Gate Impedance


    Original
    PDF IRF8721PbF IRF8721PbF IRF8721 15-Nov-2010 max6811 IRF8721 IRF8721G IRF8721TR

    RLF12560-7R8N8R2

    Abstract: WSL2512R0200FE ECJ-2YB1E124K TPSD107M016R0100 NATIONAL SEMICONDUCTOR catalog 08055C391KAT2A CRCW0805100RFK national semiconductor, product catalog LM3481 LM3481MM
    Text: Introduction The LM3481 is a current mode, low side N channel FET controller. It can be utilized in numerous configurations including a Boost, Flyback or SEPIC Single Ended Primary Inductor Converter . This evaluation board demonstrates the flexibility of the LM3481 in a boost topology. The operating conditions


    Original
    PDF LM3481 AN-1756 RLF12560-7R8N8R2 WSL2512R0200FE ECJ-2YB1E124K TPSD107M016R0100 NATIONAL SEMICONDUCTOR catalog 08055C391KAT2A CRCW0805100RFK national semiconductor, product catalog LM3481MM

    EUL-150-XL

    Abstract: MPD6S022S HP34401A RM-101 eul150 on 3055v EUL150XL HP6621A eul-150
    Text: MPD6S022S Application 1 DC-DC Converter Application Manual MPD6S022S Features ・ 3.0-5.5V input voltage. ・ High efficiency 95% typ.@3.3V/1A and small size and floor space saving. ・ Wide output voltage 1.1~3.6V range. (Output voltage is adjustable.)


    Original
    PDF MPD6S022S MPD6S022S EUL-150-XL HP34401A RM-101 eul150 on 3055v EUL150XL HP6621A eul-150

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DATA SHEET TZA3033 SDH/SONET STM1/OC3 transimpedance amplifier Objective specification File under Integrated Circuits, IC19 1998 Jul 08 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 FEATURES


    Original
    PDF TZA3033 SA5223. TZA3033T TZA3033U pan9352 TZA3033T/C2 TZA3033T/C3

    GRM31CR71H475KA12L

    Abstract: J-STD-020D Nippon capacitors
    Text: MYSSM3R31ECEN Application 1 DC-DC Converter Application Manual MYSSM3R31ECEN 1. Features ・Single output/SMD/non-isolated type DC-DC converter with high power 30W . ・High efficiency and small mounting area have been achieved. ・Wide input range(17.0V to 40.0V.


    Original
    PDF MYSSM3R31ECEN MYSSM3R31ECEN range17 3R31ECEN GRM31CR71H475KA12L J-STD-020D Nippon capacitors

    EUL-150-XL

    Abstract: MPD6S012S HP34401A RM-101 eul150
    Text: MPD6S012S Application 1 DC-DC Converter Application Manual MPD6S012S Features ・ 3.0-5.5V input voltage. ・ High efficiency 95% typ.@3.3V/1A and small size and floor space saving. ・ Wide output voltage 1.1~3.6V range. (Output voltage is adjustable.)


    Original
    PDF MPD6S012S MPD6S012S EUL-150-XL HP34401A RM-101 eul150

    J-STD-020D

    Abstract: No abstract text available
    Text: MPD7D128S Application 1 DC-DC Converter Application Manual MPD7D128S 2.18±0.5 1. Features ・100W High Power, Low Profile, Small size 45.0x45.0×8.0 mm typ. SMD. ・High efficiency & High power density achieved via Murata proprietary synchronous rectifier circuit.


    Original
    PDF MPD7D128S MPD7D128S UL60950, J-STD-020D

    dc-dc converter 12v to 5v 3a

    Abstract: MPDTY201S GRM21BR11C105KA01
    Text: MPDTY201S Application 1 DC-DC Converter Application Manual MPDTY201S 1. Features ・ Small size foot print 8.5mmx11mm , 3A output current, non-isolated POL. ・ Wide adjustable output voltage range by connecting external resistance (0.8V to 1.8V). ・ Wide operating temperature(-40 °C to +85 °C).


    Original
    PDF MPDTY201S MPDTY201S temperature-40 dc-dc converter 12v to 5v 3a GRM21BR11C105KA01

    HOA1180002

    Abstract: HOA1180-002 HOA1180-003
    Text: Datasheet - HOA1180-002 HOA1180-002 HOA Series Reflective Sensor, Transistor Output, Metal Can Packaged Components Features ● ● Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products may not


    Original
    PDF HOA1180-002 HOA1180 HOA1180-001, HOA1180-003) 20and 20Settings/rabab/Desktop/Datasheet 20HOA1180-002 HOA1180002 HOA1180-002 HOA1180-003

    HOA1881-012

    Abstract: HOA1881
    Text: Datasheet - HOA1881-012 HOA1881-012 HOA Series Transmissive Sensor, Transistor Output, Plastic Package Features ● ● Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products may not be available in your


    Original
    PDF HOA1881-012 HOA1881 HOA1881-011, HOA1881-013 20and 20Settings/rabab/Desktop/Datasheet 20HOA1881-012 HOA1881-012