ixys MDD 26 - 14
Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l
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TNY255P
Abstract: diode RL205 1N4005 pc817d rl205 diode DIODE 1n4005 BZY97C200 DIODE d2 d8 diode d8 3 BZY97-C200
Text: Diode-CCTM Low Cost Secondary CC Circuit • Uses forward drop of the opto LED U2 below as current limit reference with low cost diode (D8 below) in current path to provide thermal compensation – When combined voltage across D8 and R5 equals the forward voltage drop of the opto
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1N4005
11DQ06
BZY97C200
1N4937
470uF,
1N4148
TNY255P
diode RL205
1N4005
pc817d
rl205 diode
DIODE 1n4005
BZY97C200
DIODE d2 d8
diode d8 3
BZY97-C200
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DO-204AH
Abstract: "SIGNAL DIODE" 10k VR 1n914 equivalent 1N914 transistor data sheet free download 1N914 DO204AH
Text: 1N914 Small Signal Diode DO-204AH DO-35 Features • Silicon Epitaxial Planar Diode • For general purpose and switching. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13 g Packaging Codes/Options: D7/10K per 13” reel (52mm tape) D8/10K per Ammo tape (53mm tape)
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1N914
DO-204AH
DO-35)
DO-35
D7/10K
D8/10K
DO-204AH
"SIGNAL DIODE"
10k VR
1n914 equivalent
1N914 transistor data sheet free download
1N914
DO204AH
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pesd5v0f1bl
Abstract: smd diode device marking D8
Text: D8 82 PESD5V0F1BL SO Femtofarad bidirectional ESD protection diode Rev. 2 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect
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OD882
pesd5v0f1bl
smd diode device marking D8
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YG225D8
Abstract: power Diode 800V 10A DIODE 10a 800v
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
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YG225C8
13Min
SC-67
YG225C8
YG225N8
YG225D8
YG225D8
power Diode 800V 10A
DIODE 10a 800v
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WF-260
Abstract: No abstract text available
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225N8
YG225D8
WF-260
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Untitled
Abstract: No abstract text available
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225N8
YG225D8
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SMD TRANSISTOR L6
Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155
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STEVAL-ISS001V2
BAS16
100PPM
330UH
12X9MM
UBB-4R-D10T-1
SMD TRANSISTOR L6
transistor SMD Y1
y1 smd transistor
SMD TRANSISTOR Y1
1P smd transistor
y2 smd transistor
resistor smd 103
transistor smd R55
transistor smd j6
L6 smd transistor
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con8a
Abstract: L5973 L7805 TO220 varistor 2k2 varistor C21 2u55 STPS20 HCF401 U26A NTC 2.2 varistor
Text: 5 4 3 2 C1 L1 15mH D1 R12 T5 TRANSFORMER 1 C2 4 - 100n 400V + 1 1 D D7 4 1 C21 1n 1k 100n 400V t R1 t CON2 FUSE Varistor 2 1 3 J22 2 DIODE BRIDGE F1 F D 3 2 N C3 220u 450V NTC 16 ohm C4 STPS8H100 TRANSIL D8 10n 600V 12 +13.8V 4 20K 6W Cout1 330u 6 D5 C38 330u
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STPS8H100
1N4148
STTH106
BC337
STP10NK60Z
L5991
PC817
HCF4011B
TL431
con8a
L5973
L7805 TO220
varistor 2k2
varistor C21
2u55
STPS20
HCF401
U26A
NTC 2.2 varistor
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BUV 89
Abstract: No abstract text available
Text: SKM 300GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .R 2 JK L8 D8 .R 2 I]K L8 D8Y` .03+ 2 JKL8A * 5(+ %41(/<-+( +=(0-?-(F BOO 7 X^O E .0 2 _O L8 XOO E BOO E a JO 7 .R 2 IKO L8 B U+ .0 2 JK L8 XKO E .0 2 _O L8 JKO E BOO E I]BO E KOO E M NO PPP Q I]K
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300GB066D
BUV 89
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Untitled
Abstract: No abstract text available
Text: SKiiP 12NAB065V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper , %3 : ,%3 1 2 . #
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12NAB065V1
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23NAB12T4V10
Abstract: SKiiP 23NAB12T4V10
Text: SKiiP 23NAB12T4V10 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper - %7 ? - %7 3 4 0 " 3 )( 6/;8 4 9 Values Units +); '/ 6';8 /( @ ); - < ; $$$ = +/( 4 '; 6)&8
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23NAB12T4V10
23NAB12T4V10
SKiiP 23NAB12T4V10
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Untitled
Abstract: No abstract text available
Text: SKiiP 23NAB12T4V10 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper - %7 ? - %7 3 4 0 " 3 )( 6/;8 4 9 Values Units +); + 6' 8 /( @ ); - < ; $$$ = +/( 4 '; 6)&8 /(
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23NAB12T4V10
23NAB12T4V10
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Untitled
Abstract: No abstract text available
Text: SKiiP 13NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper - %4 < -%4 2 3 + # 2 )( 67/8 3 > Values Units &// )9 6:;8 '/ = )/ - ? 9/ $$$ @ :(/ 3 )& 6:A8 '/
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13NAB065V1
13NAB065V1
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13NAB065V1
Abstract: 13NAB065
Text: SKiiP 13NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper - %4 < -%4 2 3 + # 2 )( 67/8 3 > Values Units &// )9 6:;8 '/ = )/ - ? 9/ $$$ @ :(/ 3 )& 6:A8 '/
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13NAB065V1
13NAB065V1
13NAB065
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SKiiP 23NAB12T4V10
Abstract: 23NAB12T4V1 Semikron skiip 23 nab
Text: SKiiP 23NAB12T4V10 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper - %7 ? - %7 3 4 0 " 3 )( 6/;8 4 9 Values Units +); '/ 6';8 /( @ ); - < ; $$$ = +/( 4 '; 6)&8
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23NAB12T4V10
23NAB12T4V10
SKiiP 23NAB12T4V10
23NAB12T4V1
Semikron skiip 23 nab
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MIAA10WD600TMH Converter - Brake - Inverter Module NPT IGBT P P1 T1 D8 D10 L1 L2 NTC1 G1 G2 G4 EU N Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM = 300 A W T6 D4 D6 G6 EV = 18 A VCE sat = 2.1 V Application: AC motor drives with
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MIAA10WD600TMH
IDAVM25=
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semikron SKiiP 12NAB065V1
Abstract: semikron skiip nab 12NAB065V1 Semikron skiip 24 nab
Text: SKiiP 12NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper , %3 : ,%3 1 2 . # 1 )( 6748 2 # ; 9 - = Values Units &44 )4 69(8 )4 < )4 , , > ?4 $$$ @ 9(4 2
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12NAB065V1
12NAB065V1
semikron SKiiP 12NAB065V1
semikron skiip nab
Semikron skiip 24 nab
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semikron skiip nab 12
Abstract: No abstract text available
Text: SKiiP 11NAB12T4V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper - %7 @ - %7 2 4 0 " 2 )( 6?;8 4 9 Values Units 3); 3) 63)8 ) A ); - < ; $$$ = 3?( 4 3( 63)8 )
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11NAB12T4V1
11NAB12T4V1
/-off11
semikron skiip nab 12
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94A44
Abstract: No abstract text available
Text: SKiiP 12NAB065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper , %3 : ,%3 1 2 . # 1 )( 6748 2 # ; 9 - = Values Units &44 )4 69(8 )4 < )4 , , > ?4 $$$ @ 9(4 2 )4 69&8 )4 > ?4 $$$ @ 9(4
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12NAB065V1
94A44
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Untitled
Abstract: No abstract text available
Text: SKiiP 12NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper , %3 : ,%3 1 2 . # 1 )( 6748 2 # ; 9 - = Values Units &44 )4 69(8 )4 < )4 , , > ?4 $$$ @ 9(4 2
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12NAB065V1
12NAB065V1
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14NAB065V1
Abstract: No abstract text available
Text: SKiiP 14NAB065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper - %4 ; -%4 2 3 + # 2 )( 6708 3 2 )( 6708 3 + # < 9 . > Values Units &00 )( 69:8 (0 6'&8 = )0 - ? /0 $$$ @ 9(0 3 )( 69:8
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14NAB065V1
14NAB065V1
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philips ecg master replacement guide
Abstract: ecg semiconductor replacement guide ECG SEMICONDUCTOR TRANSISTOR REPLACEMENT ECG TRANSISTOR REPLACEMENT GUIDE ecg replacement guide philips ecg replacement guide ic 74ls47 ecg semiconductors master replacement guide IC 74LS48
Text: PHILIPS E C G INC ÌID » bbSBTHfl 0002503 ~r~ 7 - 52 - 1 3 - 1 5 D isp lay Driver Integrated Circuits D isp lay Driver Integrated Circuits provide the necessary drive a n d /o r interfacing required to enable visible displays. D evices are available w h ich can supply the re
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T-52-13-15
74C48
74C925
74LS47
philips ecg master replacement guide
ecg semiconductor replacement guide
ECG SEMICONDUCTOR
TRANSISTOR REPLACEMENT ECG
TRANSISTOR REPLACEMENT GUIDE
ecg replacement guide
philips ecg replacement guide
ic 74ls47
ecg semiconductors master replacement guide
IC 74LS48
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HT12E application note
Abstract: a/RF remote control HT12E
Text: HOLTEK H r 2 12 Series of Encoders Features • Operating voltage: - 2.4V-5V for the HT12A/B/C - 2.4V-12V for the HT12E/EA • Low power and high noise immunity CMOS technology • Low standby current: 0.1|iA Typ. at VDD=5V • HT12A/B/C with a 38kHz carrier for infra
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HT12A/B/C
V-12V
HT12E/EA
HT12A/B/C
38kHz
HT12A/C/E/EA:
HT12B:
18-pin
HT12E application note
a/RF remote control HT12E
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