MP7001
Abstract: MP700
Text: MP7001 TOSHIBA Power Module MP7001 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2) (50 Hz, non-repetitive) IFSM 220 A Forward current IF 25 A
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MP7001
MP7001
MP700
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MP7003
Abstract: MP700
Text: MP7003 TOSHIBA Power Module MP7003 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) IFSM 220 A Forward current
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MP7003
MP7003
MP700
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A12580
Abstract: MP7003 DIODE d2 d8
Text: MP7003 TOSHIBA Power Module MP7003 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) IFSM 220 A Forward current
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MP7003
A12580
MP7003
DIODE d2 d8
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toshiba power module
Abstract: 20A40
Text: MP7003 TOSHIBA Power Module MP7003 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) IFSM 220 A Forward current
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MP7003
toshiba power module
20A40
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Untitled
Abstract: No abstract text available
Text: MP7003 TOSHIBA Power Module MP7003 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) IFSM 220 A Forward current
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MP7003
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MP7001
Abstract: No abstract text available
Text: MP7001 TOSHIBA Power Module MP7001 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2) (50 Hz, non-repetitive) IFSM 220 A Forward current IF 25 A
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MP7001
MP7001
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Untitled
Abstract: No abstract text available
Text: MP7001 TOSHIBA Power Module MP7001 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2) (50 Hz, non-repetitive) IFSM 220 A Forward current IF 25 A
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MP7001
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BSZ520N15NS3
Abstract: marking 6B s4si 6B104 I6025 marking a6b
Text: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6= ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) ' Q& @G @? B6C:CD2 ? 46 R 9I"\[#
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BSZ520N15NS3
marking 6B
s4si
6B104
I6025
marking a6b
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smd transistor 2a
Abstract: CAPACITOR 47UF 25V ELECTROLYTIC capacitor 100uF 63V smd diode d9 SMD ZENER DIODE j1 SMD electrolytic capacitor 100uF 63V diode zener c19 resistor 15k smd transistor 123 Diode zener smd d8
Text: STMicroelectronics: STEVAL-TSP001V1 Power Over Ethernet Board QTY 1 1 2 1 1 3 1 2 1 3 1 1 1 1 1 1 1 1 2 2 1 1 1 1 1 1 3 4 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Reference C1 C10 C11, C12 C15 C18 C2, C3, C4 C7 C8, C19 C9 D1, D2, D4 D10 D3 D5 D6 D7 D8 D9 ISO1 J1, J2
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STEVAL-TSP001V1
May-07
4700pF
C1812C472KDRACTU
1500uF
EEV-FK0J152P
EEV-FK1C681P
EEV-FK1J101P
EEV-HA1E470P
DF1506DICT
smd transistor 2a
CAPACITOR 47UF 25V ELECTROLYTIC
capacitor 100uF 63V
smd diode d9
SMD ZENER DIODE j1
SMD electrolytic capacitor 100uF 63V
diode zener c19
resistor 15k
smd transistor 123
Diode zener smd d8
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Untitled
Abstract: No abstract text available
Text: STU/D802S Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY V DSS Super high dense cell design for low R DS ON . R DS(ON) (m Ω) Max ID Rugged and reliable. 35 @ VGS=10V
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STU/D802S
O-252
O-251
O-252AA
O-252
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SMD DIODE 1N4007 DATASHEET
Abstract: PC817 SMD smd transistor t1A SMD resistors 2r2 transistor SMD 24 optocoupler PC817 smd diode ED t1A transistor smd SMD transistor r24 1N4007 SMD
Text: STEVAL-ISA019V2 Item Quantity Reference Capacitors: 1 2 C1,C2 2 2 C3,C4 3 1 C5 4 1 C6 5 2 C12 6 1 C9 7 1 C10 8 1 C11 9 1 C13 10 1 C7 11 1 C8 Diodes: 12 1 D11 13 1 D9 3 D7,D8,D10 14 15 1 D6 16 1 D5 17 4 D1,D2,D3,D4 Mechanical parts: 18 1 F1 19 2 het1, het2
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STEVAL-ISA019V2
220uF
1000uF/35V
47uF/35V
100nF
470pF
1600VDC
86H-6017C
L6565
PC817
SMD DIODE 1N4007 DATASHEET
PC817 SMD
smd transistor t1A
SMD resistors 2r2
transistor SMD 24
optocoupler PC817
smd diode ED
t1A transistor smd
SMD transistor r24
1N4007 SMD
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TNY255P
Abstract: diode RL205 1N4005 pc817d rl205 diode DIODE 1n4005 BZY97C200 DIODE d2 d8 diode d8 3 BZY97-C200
Text: Diode-CCTM Low Cost Secondary CC Circuit • Uses forward drop of the opto LED U2 below as current limit reference with low cost diode (D8 below) in current path to provide thermal compensation – When combined voltage across D8 and R5 equals the forward voltage drop of the opto
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1N4005
11DQ06
BZY97C200
1N4937
470uF,
1N4148
TNY255P
diode RL205
1N4005
pc817d
rl205 diode
DIODE 1n4005
BZY97C200
DIODE d2 d8
diode d8 3
BZY97-C200
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MIAA10WD600TMH Converter - Brake - Inverter Module NPT IGBT P P1 T1 D8 D10 L1 L2 NTC1 G1 G2 G4 EU N Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM = 300 A W T6 D4 D6 G6 EV = 18 A VCE sat = 2.1 V Application: AC motor drives with
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MIAA10WD600TMH
IDAVM25=
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2416A
Abstract: No abstract text available
Text: Advanced Technical Information MITA10WB1200TMH Converter - Brake - Inverter Module Trench IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V
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MITA10WB1200TMH
IDAVM25=
2416A
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MITA15WB1200TMH Converter - Brake - Inverter Module Trench IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B N Brake Chopper EV VCES = 200 V IDAVM25 = IC25 = 30 A IC25 = 30 A VCE sat = .8 V VCE(sat) = .8 V Application: AC motor drives with
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MITA15WB1200TMH
IDAVM25
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MITB15WB1200TMH Converter - Brake - Inverter Module Trench IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V
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MITB15WB1200TMH
IDAVM25=
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G4EU
Abstract: No abstract text available
Text: Advanced Technical Information MITB10WB1200TMH Converter - Brake - Inverter Module Trench IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V
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MITB10WB1200TMH
IDAVM25=
G4EU
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MITA15WB1200TMH
Abstract: No abstract text available
Text: Advanced Technical Information MITA15WB1200TMH Converter - Brake - Inverter Module Trench IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V
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MITA15WB1200TMH
IDAVM25=
MITA15WB1200TMH
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MIAA15WB600TMH
Abstract: No abstract text available
Text: Advanced Technical Information MIAA15WB600TMH Converter - Brake - Inverter Module NPT IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V
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MIAA15WB600TMH
IDAVM25=
MIAA15WB600TMH
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100v capacitor 10k ti
Abstract: optocoupler 357 0.1uF Capacitor Ceramic rectifier diode 2kv zener 6.3V CTR CAPACITOR 0.1uf MOSFET N-CH 200V 357 optocoupler bridge rectifier 1A DF01S 1A 100V
Text: POE Power Supply BOM Texas Instruments PMP511 Rev B Qty 1 1 1 1 3 2 1 1 3 1 2 1 2 2 1 1 1 1 1 1 1 2 1 1 1 1 1 1 1 1 1 1 3 1 1 1 1 1 1 RefDes C16 C19 C18 C21 C17, C20, C22 C15, C23 C7 C13 C8, C9, C10 C14 C11, C12 C5 D5, D8 D6, D7 D3 L1 L3 R12 R7 R6 R13 R9, R17
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PMP511
330pF
560pF
680pF
8200pF
033uF
033uF,
C3225X5R1C106M
100v capacitor 10k ti
optocoupler 357
0.1uF Capacitor Ceramic
rectifier diode 2kv
zener 6.3V
CTR CAPACITOR 0.1uf
MOSFET N-CH 200V
357 optocoupler
bridge rectifier 1A
DF01S 1A 100V
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con8a
Abstract: L5973 L7805 TO220 varistor 2k2 varistor C21 2u55 STPS20 HCF401 U26A NTC 2.2 varistor
Text: 5 4 3 2 C1 L1 15mH D1 R12 T5 TRANSFORMER 1 C2 4 - 100n 400V + 1 1 D D7 4 1 C21 1n 1k 100n 400V t R1 t CON2 FUSE Varistor 2 1 3 J22 2 DIODE BRIDGE F1 F D 3 2 N C3 220u 450V NTC 16 ohm C4 STPS8H100 TRANSIL D8 10n 600V 12 +13.8V 4 20K 6W Cout1 330u 6 D5 C38 330u
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STPS8H100
1N4148
STTH106
BC337
STP10NK60Z
L5991
PC817
HCF4011B
TL431
con8a
L5973
L7805 TO220
varistor 2k2
varistor C21
2u55
STPS20
HCF401
U26A
NTC 2.2 varistor
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Untitled
Abstract: No abstract text available
Text: F / M R C H I I - D June 1996 M lC O N D U C T O R NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power S O T P-Channel enhancement m ode power field effect • -5.9A, - 3 0 V .R D8 ON| = 0 . 0 5 n @ V gs = -10V transistors are produced using Fairchild's proprietary, high cell
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NDT454P
OT-223
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wl3 diode
Abstract: CASED69A semikron skd 32 DIODE D16
Text: s e MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tstg Visol humidity climate Units Rge = 20 k£2 Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms per IGBT/D1/D8,Tcase=25°C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes 9) If IfM= - IcM
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DG28
Abstract: LC28 MV65030 MV66030
Text: MARCH 1987 PRELIMINARY INFORMATION MV65030 64-WORD X 9-BIT FIRST-IN FIRST-OUT MEMORY SUPERSEDES SEPTEM BER 1986 E D IT IO N The MV65030 is an asynchronous first-in first-out memory, organised as 64 9-bit words. The device accepts a 9-bit parallel word, DO - D8, under control of the shift in (SI) input.
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MV65030
64-WORD
MV65030
DG28
LC28
MV66030
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