DIODE D122 Search Results

CM121308

Abstract: CM1213-02SR CM1213-01ST
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

cm1213-04st

Abstract: 025 SOT23 CM1213-04SO CM1213 CM1213-01ST CM121308 CM1213-02SR D138 marking Zener diode sot23-5 california micro CM1213-02SS
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1213-02ST

Abstract: CM1213-02SR CM1213-04SO ZENER DIODE E1 025 SOT23 3-pin D128 transistor HDMI D136 d138 SOT143 package CM1213 diode zener 05
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1213-04SO

Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1213-04SO

Abstract: CM1213 D123 CM1213-02SR CM1213-04ST Zener diode sot23-5 california micro CM121308
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1213-02SS

Abstract: CM1213 CM1213-A4MR CM121308
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1213-02SS

Abstract: CM121308 marking d1x1 CM1213-01ST
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

1225C

Abstract: hy 1418 590uH IC MPC 1420 018U 2SD1399 HT 12E APPLICATION 2SC227I
Contextual Info: SA NY O S E M I C O N D U C T O R CORP 1SE D | 7 in 7 D 7 b 2SD1399 0O0SD7fl r -3 3 N P N T rip le D iffu s e d P la n a r S ilic o n T r a n s is to r 2022 Color TV Horizontal Deflection Output Applications with Damper Diode (D1225C Features: • High Breakdown Voltage and High Reliability.

Contextual Info: S IE M E N S Silicon Switching Diode Array SMBD 2837 SMBD 2838 • For high-speed switching applications • Common cathode Type Marking Ordering Code tape and reel S M B D 2837 S M B D 2838 sA5 sA4 Q68000-A8487 Q68000-A8437 Pin Configuration Package1) ï

Contextual Info: CD510825 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Diode POW-R-BLOK Modules 250 Amperes/800 Volts A J (4 TYP.) 1 2 P - M8 THD (4 TYP.) 4 3 H C M L - DIA. (2 TYP.) F B E F B D G A E N A1 1 K1 K2 3 2 CD510825

A1 dual diode

Abstract: CD51 CD510825 K232 powerex cd51
Contextual Info: CD510825 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Diode POW-R-BLOK Modules 250 Amperes/800 Volts A J (4 TYP.) 1 2 P - M8 THD (4 TYP.) 4 3 H C M L - DIA. (2 TYP.) F B E F B D G A E N A1 1 K1 K2 3 2 CD510825

Contextual Info: S T U/D1224N S amHop Microelectronics C orp. Dec 20,2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω) Max R ugged and reliable. 80 @ V G S = 4.5V

Contextual Info: S T U/D1224N S amHop Microelectronics C orp. Dec 20,2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω) Max R ugged and reliable. 80 @ V G S = 4.5V

bck-28

Abstract: TRANSFORMER bck zd103 lx6503 SWITCHING TRANSISTOR C144 PC101 optocoupler d313 TRANSISTOR equivalent DIODE zd101 sfh817a transistor D313 pin configuration
Contextual Info: TND360/D Rev. 0, February 2009 Up to 180 W High Voltage LCD TV Power and Integrated Inverter Supply 12 February 2009 2009 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

relay finder 45.61

Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
Contextual Info: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .

609-5015M

Abstract: D0061b TD2425-B tb ansley TD2425F CRY30M 609-2615M crydom as0241 three phase SCR gate drive circuit AC15A
Contextual Info: Solid S t a t e Relays I n p u t /O u t p u t M o du les P o w er M o du les CRY3 SSSffft-VX ifWM 0 M D53TP 50D INPUT STATUS /Z iiŒ w « a i2 CSYDOM CH Y O O M 3 PHASE SOUD STATE RELAY S O U O -S T A T E R E L> S O U O -S T A T E RELAY \j % A C R Y D O M

l312f

Abstract: L522F RSF74Y100RM L622F relay d2w B512F-2T L514F 24HV1A100 m505032 cpv240
Contextual Info: Solid State Relays All Dimensions Are in Inches mm Featuring state-of-the-art Surface Mount Technology, these SPST-NO relays deliver proven reliability in the most demanding applications. Output consists of an SCR AC switch and is available in zero-cross and

IC-310

Abstract: CCD linear image sensor 22-pin scanner S124
Contextual Info: TCD2704D TOSHIBA CCD Linear Image Sensor CCD charge coupled device Preliminary TCD2704D The TCD2704D is a high sensitive and low dark current 7500 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of

CCD linear image sensor 22-pin scanner

Abstract: S124
Contextual Info: TCD2561D TOSHIBA CCD Linear Image Sensor CCD charge coupled device Preliminary TCD2561D The TCD2561D is a high sensitive and low dark current 5340 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of

thyristor k 202 russian

Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Contextual Info: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)