D1004
Abstract: MCH3405 MCH5811 SS10015M
Text: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)
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MCH5811
ENN8059
MCH3405)
SS10015M)
D1004
MCH3405
MCH5811
SS10015M
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PDF
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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Original
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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PDF
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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PDF
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IFM D100
Abstract: CD41 CD411230 CD411630
Text: CD411230 CD411630 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Diode POW-R-BLOK Modules 30 Amperes/1200-1600 Volts A B 1 2 3 H D K - DIA. (2 TYP.) G E E L - M5 THD (3 TYP.) C A F CD411230, CD411630 Dual Diode
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CD411230
CD411630
Amperes/1200-1600
CD411230,
D-102
IFM D100
CD41
CD411230
CD411630
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PDF
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Untitled
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Description Features Uniform light emitting area. The Hyper Red source color devices are made with Al- Low current operation GaInP on GaAs substrate Light Emitting Diode. Easily mounted on P.C.boards.
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Original
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89mmx3
KB-D100SURKW
DSAK2968
JAN/04/2011
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PDF
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Untitled
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.
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Original
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89mmx3
KB-D100SURKW
DSAK2968
JAN/04/2011
KB-D100SURKW
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PDF
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Untitled
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.
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Original
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89mmx3
KB-D100SURKW
DSAK2968
APR/13/2013
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PDF
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Untitled
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.
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Original
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89mmx3
KB-D100SURKW
DSAM8385
JAN/20/2013
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PDF
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RECTIFIER DIODE D100
Abstract: D100 diode D100/04 d100-16 diode D100/04 DIODE D100 D10008 D100/12 D100/16 1750a
Text: Rectifier Diode D100 Technical Data Typical applications : All purpose mean power rectifier diodes, Non-controllable rectifiers . Free-wheeling diodes. Type No. D100/04 D100/06 D100/08 VRRM Volts 400 600 800 VRSM (Volts) 500 700 900 D100/12 1200 1300 D100/16
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D100/04
D100/06
D100/08
D100/12
D100/16
RECTIFIER DIODE D100
D100
diode D100/04
d100-16 diode
D100/04
DIODE D100
D10008
D100/12
D100/16
1750a
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PDF
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KB-D100SRW
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SRW Super Bright Red Features Description z UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with z LOW CURRENT OPERATION Gallium Aluminum Arsenide Red Light Emitting Diode. z EASILY MOUNTED ON P.C.BOARDS.
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89mmx3
KB-D100SRW
DSAA9424
MAY/14/2007
KB-D100SRW
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PDF
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KB-D100SRW
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SRW Super Bright Red Features Description z Uniform light emitting area. The Super Bright Red source color devices are made with z Low current operation Gallium Aluminum Arsenide Red Light Emitting Diode. z Easily mounted on P.C.boards.
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89mmx3
KB-D100SRW
DSAA9424
MAR/25/2011
KB-D100SRW
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PDF
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Untitled
Abstract: No abstract text available
Text: IDW100E60 Fast Switching Emitter Controlled Diode A Features: • 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 °C junction operating temperature Easy paralleling
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IDW100E60
PG-TO-247-3
D100E60
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PDF
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Untitled
Abstract: No abstract text available
Text: VS901SL Ordering number : ENA1295A SANYO Semiconductors DATA SHEET VS901SL Low Capacitance TVS Diode General Purpose Protection Device Applications • • • • • USB 2.0. Mobile communication. STB, MP3, DVD, DSC. LCD, camera. Notebooks and desktop computers, peripherals.
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VS901SL
ENA1295A
/5/12V
IEC61000-4-2
IEC61000-4-4
5/50ns)
31mm3.
A1295-3/3
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PDF
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IEC61000-4-4
Abstract: vs901sl diode d1008
Text: VS901SL Ordering number : ENA1295C SANYO Semiconductors DATA SHEET VS901SL Low Capacitance TVS Diode General Purpose Protection Device Applications • • • • • USB 2.0. Mobile communication. STB, MP3, DVD, DSC. LCD, camera. Notebooks and desktop computers, peripherals.
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VS901SL
ENA1295C
/5/12V
IEC61000-4-2
IEC61000-4-4
5/50ns)
31mm3.
A1295-3/3
IEC61000-4-4
vs901sl
diode d1008
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PDF
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C3D10065I
Abstract: No abstract text available
Text: C3D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier IF; 10 A TC<125˚C= = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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C3D10065I
650-Volt
O-220-2
C3D10065I
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PDF
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Untitled
Abstract: No abstract text available
Text: SBH15-03 Ordering number : ENN6968B SBH15-03 Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH15-03 applied sets to be made smaller. Low forward voltage VF max=0.3V . Average rectified current : IO=1.5A.
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SBH15-03
ENN6968B
SBH15-03
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PDF
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D1003
Abstract: SBH15-03
Text: SBH15-03 Ordering number : ENN6968B SBH15-03 Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH15-03 applied sets to be made smaller. Low forward voltage VF max=0.3V . Average rectified current : IO=1.5A.
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SBH15-03
ENN6968B
SBH15-03
D1003
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PDF
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Untitled
Abstract: No abstract text available
Text: TIG058E8 Ordering number : ENA1381 SANYO Semiconductors DATA SHEET TIG058E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • • Low-saturation voltage. Low voltage drive 4V . Enhansment type. Built-in Gate-to-Emitter protection diode.
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TIG058E8
ENA1381
12mm2.
A1381-5/5
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PDF
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TIG058E8
Abstract: A1381
Text: TIG058E8 Ordering number : ENA1381 SANYO Semiconductors DATA SHEET TIG058E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • • Low-saturation voltage. Low voltage drive 4V . Enhansment type. Built-in Gate-to-Emitter protection diode.
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TIG058E8
ENA1381
12mm2.
VCE320V,
A1381-5/5
TIG058E8
A1381
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PDF
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D1003
Abstract: SBM30-03
Text: SBM30-03 Ordering number : ENN6967B SBM30-03 Schottky Barrier Diode 30V, 3A Rectifier Features • • • Supports automatic mounting and permits SBM30-03 applied sets to be made smaller. Low forward voltage VF max=0.4V . Average rectified current : IO=3A.
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SBM30-03
ENN6967B
SBM30-03
D1003
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PDF
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Untitled
Abstract: No abstract text available
Text: CSD10060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 10A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD10060â
O-263-2
O-220-2
CSD10060
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PDF
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Untitled
Abstract: No abstract text available
Text: CSD10060–Silicon Carbide Schottky Diode VRRM = 600 V Zero Recovery Rectifier IF AVG = 10 A Qc Features • • • • • • • = 28 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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CSD10060â
600-Volt
O-263-2
O-220-2
CSD10060
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PDF
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Untitled
Abstract: No abstract text available
Text: CSD10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD10030â
O-220-2
CSD10030
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PDF
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Untitled
Abstract: No abstract text available
Text: CSD10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD10030â
O-220-2
CSD10030
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PDF
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