"Varactor Diode"
Abstract: MV1401 varactor diode datasheet varactor diode tuning varactor varactor APPLICATION
Text: MV1401 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI MV1401 is a Silicon HyperAbrupt Tuning Varactor Diode. PACKAGE STYLE D0-7 FEATURES INCLUDE: • 14:1 Minimum Tuning Range • High Q - 400 Typical • Economical DO-7 Package MAXIMUM RATINGS IF
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MV1401
MV1401
CT1/CT10
"Varactor Diode"
varactor diode datasheet
varactor diode
tuning varactor
varactor APPLICATION
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Untitled
Abstract: No abstract text available
Text: DKV65232 SILICON VARACTOR DIODE 22 VOLTS DESCRIPTION: The DKV65232 is a Silicon Hyperabrupt Varactor Diode Designed for EHF Operation. FEATURES INCLUDE: PACKAGE STYLE D0-7 • High Tuning Ratio - 6.3 Typ. • Linear Tuning Characteristic • Hermetic DO-7 Package
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DKV65232
DKV65232
CT4/CT20
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dil16
Abstract: DIL16-package diode d07 49 schematic with a schottky diode SDA24 SDA24D16 SDA24N16 DSA003653
Text: SCHOTTKY DIODE ARRAY SDA24 ISSUE 3 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA24 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and
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SDA24
SDA24
200mA
DIL16
DIL16
SDA24D16
DIL16-package
diode d07 49
schematic with a schottky diode
SDA24D16
SDA24N16
DSA003653
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SDA32N20
Abstract: DIL-20 DIL20 SDA32 SDA32D20 SO20 DSA003654
Text: SCHOTTKY DIODE ARRAY SDA32 ISSUE 2 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and
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SDA32
SDA32
200mA
DIL20
DIL20
SDA32N20
SDA32N20
DIL-20
SDA32D20
SO20
DSA003654
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diode D07-15
Abstract: diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
diode D07-15
diode d07
SOT-251
d07 15 58
TSC5302D
diode D07-15 30
D07 15
diode marking b2
NPN Silicon Power Transistor DPAK
NPN Transistor 1A 400V
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diode 1N5819
Abstract: No abstract text available
Text: Axial Lead Schottky Diode Package 1N5819 Datasheet Features • Low forward voltage: 550 mV @ IF = 1 A • High reverse breakdown voltage: 30 V • RoHS Compliant • Hermetically Sealed Axial Lead Glass Package Description The Aeroflex/Metelics 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low
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1N5819
1N5819
diode 1N5819
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diode D07-15
Abstract: D07 15 d07-15 diode d07-15 diode D07-15 04 d0715 diode D07-15 30 fast recovery diode 1500V diode erd07-15
Text: ERD07 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : White Applications D07- 15 51 Abridged type name
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ERD07
diode D07-15
D07 15
d07-15 diode
d07-15
diode D07-15 04
d0715
diode D07-15 30
fast recovery diode 1500V
diode erd07-15
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BB130
Abstract: capacitance diode cd-12 TO-92
Text: b3E D • _ bbS3cì^^ D0725öb 306 B1SIC3 MARC/PHI!-!PS SEHICOND II BB130 _ { VARIABLE CAPACITANCE DIODE A single variable capacitance diode, in a plastic envelope. The diode is for tuning of long, medium and short wavebands. Also suitable for frequency synthesizer applications.
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007E5Ã
BB130
OD-69
BB130
capacitance diode
cd-12 TO-92
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused
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SDA32
DIL20
200mA
SDA32
DIL20
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PDF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA
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SDA32
200mA
DIL20
SDA32
SDA32N20
SDA32D20
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BB112
Abstract: am variable capacitance diode 8b112 NA 440
Text: b3E T> m - bbSB^iM D07SSÔM S3S « S I C 3 NAPC/PHILIPS SEMICOND BB112 - SILICON PLANAR VARIABLE CAPACITANCE DIODE T h e B B 1 12 is a single 9 V variable capacitance diode in a plastic encapsulation fo r applicatio n in tu n in g circuits in a.m . receivers. T h e diodes are supplied in m atched sets o f three items.
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D07SSÃ
BB112
BB112
OD-69
am variable capacitance diode
8b112
NA 440
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1N1743
Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:
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1N225
1N2260)
1N227
1N228
1N229
1N230O)
1N231d)
1N232
BZX83
BZX97
1N1743
IN5234
IN5008
1N4202
zener diode 1N PH 48
diode 1n1418
1NS232
zener diode c51 ph
1n587
1N4465
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DIODE N20
Abstract: SD Series
Text: Section 9: Integrated Circuits S ch o ttky Diode A rra y Series SD A S e rie s The SDA Schottky Barrier Diode Array series is designed to reduce reflection noise on high speed parallel data lines. This helps suppress transients caused by transm ission line
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SDA12,
SDA12
SDA24
SDA32
SDA16D24
S016/DIL16
N16/D16
S020/DIL20
N20/D20
SDA12
DIODE N20
SD Series
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Untitled
Abstract: No abstract text available
Text: / = T SGS-THOMSON * 7#. TM BAT 49 M M IIU Ig » [l] g Ì SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex cessive voltage such as electrostatic discharges.
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0075c
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Untitled
Abstract: No abstract text available
Text: r Z Ä Z S G S -T H O M S O N T# T M M 5711 IL iO T O IÜ lIS i is SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break down, low tum-on voltage and ultrafast switching. Primarly intended for high level UHF/VHFdetection
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D07ST73
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY SDA24 ISSUE 3 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA24 S chottky Barrier Diode A rra y is designed to reduce reflection noise on high speed parallel data lines. • Reduced re fle c tio n noise • R e p e titive peak fo rw a rd c u rre n t 2 00m A
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SDA24
SDA24
S016N
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Untitled
Abstract: No abstract text available
Text: 43E T> SEMITRON INDUSTRIES LTD 013760*1 D000177 7 BISLCB IN4890-4895A series Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS GLASS D07 • This series of Semitron 400 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured
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D000177
IN4890-4895A
PPM/1000
DO-35
DO-41
DO-15
DO-201AD
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1N3501
Abstract: 1N3504 1N3503 Semitron Industries 6265
Text: SEMITRON INDUSTRIES LTD 43E D • 013700*? 00GG175 3 BSLCB -t-u -07 IN3501-3504 SERI ES Temperature Compensated Diode 6V35 Ultra Stable APPLICATIONS GLASS D07 ■ This series of Semitron 250 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY
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137flfl'
00QG175
IN3S01-3504
PPM/1000
1N3501
1N3504
1N3503
Semitron Industries
6265
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DIODE SW-05
Abstract: No abstract text available
Text: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40
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110MP
OT-23
200MHz
T0220
b43125T
0P03SSÃ
DIODE SW-05
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1N4895A
Abstract: 1N4890 1N4890A 1N4891A 1N4893 1N4895 zener diode A23
Text: 43E T> SEMITRON INDUSTRIES LTD 013760*1 D000177 7 BISLCB IN4890-4895A s e r i e s Temperature Compensated Diode 6V35 Volts Ultra Stable GLASS D07 APPLICATIONS • This series of Semitron 400 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured
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fll37Ã
D000177
PPM/1000
1N4895A
1N4890
1N4890A
1N4891A
1N4893
1N4895
zener diode A23
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Untitled
Abstract: No abstract text available
Text: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07
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G00G173
500mW
DO-35
DO-41
DO-15
DO-201AD
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1n9418
Abstract: 1N941 1N941A 1N941B 1N942 1N942A 1N942B 1N943 1N943A j5304
Text: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERIES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07
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G00G173
500mW
500mW
0009VC.
002VC
0029VC.
1n9418
1N941
1N941A
1N941B
1N942
1N942A
1N942B
1N943
1N943A
j5304
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smd code p5
Abstract: BB135 smd diode B3E smd diode marking B3E marking CODE R SMD DIODE
Text: bbSa'ìEM D0742b3 =145 » S I C 3 Philips Semiconductors -reliminary specification UHF variable capacitance diode BB135 -IB1BB1Blll-liBIBIBI-l NAPC/PHILIPS SEHICONJ b3E D FOR D E T A IL E D IN F O R M A T IO N SEE THE LATEST ISSU t u i- tiA iiiu c u u r o w i
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D0742b3
BB135
BB135
OD323.
MSB045
OD323)
smd code p5
smd diode B3E
smd diode marking B3E
marking CODE R SMD DIODE
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NE527
Abstract: TSE 151 NE527D
Text: Philips Semiconductors Linear Products Product specification Voltage comparator NE527 DESCRIPTION PIN CONFIGURATIONS_ The NE527 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with
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NE527
NE527
NE529
TSE 151
NE527D
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