Untitled
Abstract: No abstract text available
Text: UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 QUAD SCHOTTKY DIODE ARRAY FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time
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UC1611
UC3611
SLUS338A
SLYT017,
962-90538012A
5962-9053801PA
UC1611J
UC1611J883B
UC1611L
UC1611L883B
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NTE618
Abstract: No abstract text available
Text: NTE618 Varactor Silicon Tuning Diode for AM Radio Description; The NTE618 is a silicon varactor diode designed for electronic tuning of AM receivers and high capacitance, high tuning ratio applications. Features: D High Capacitance Ratio: CR = 15 Min D Guaranteed Diode Capacitance: Ct = 440pF (Min), 560pF (Max) @ VR = 1V, f = 1MHz
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NTE618
440pF
560pF
C1/C15
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IRF7101
Abstract: IRF7421D1 7421D
Text: PD- 91411C IRF7421D1 PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint l l l l A A D A 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V
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91411C
IRF7421D1
forward48
7421d1
IRF7101
IRF7421D1
7421D
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IRF7101
Abstract: IRF7421D1
Text: PD - 91411C IRF7421D1 PRELIMINARY FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D A 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V
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91411C
IRF7421D1
forwar10)
IRF7101
IRF7421D1
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MMAD1109
Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD130/D
MMAD130/D
MMAD1109
MMAD130
MMAD1103
MMAD1105
MMAD1107
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IRF7422D2
Abstract: MS-012AA IRF74
Text: PD- 91412L IRF7422D2 FETKY TM MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D S 3 6 D 4
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91412L
IRF7422D2
EIA-481
EIA-541.
IRF7422D2
MS-012AA
IRF74
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Untitled
Abstract: No abstract text available
Text: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V
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IRF7421D1PbF
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DD250HB UL;E76102 M Power Diode Module D D 250H B series are designed for various rectifier circuits. D D 250H B has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage
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DD250HB
E76102
00Q20bA
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25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE D D 160F UL;E76102 M Power Diode Module D D 16 0 F series are designed for various rectifier circuits. DD 1 6 0 F has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up
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E76102
DD160F-40
DD160F-80
DD160F-120
DD160F-160
000P2A1
B-123
DDQ22A2
DD160F
B-124
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mj 1504 transistor
Abstract: transistor mj 1504 2N5862 MJ 5030 transistor b 1560 mj 1504 2N5680 2N5867 2N4902 2N4903
Text: ~2~B48352 DIODE TE~£WgISTOR CO INC PNPTO-3 A4 84D D E|EflM fl3SE 0 0 135 D D D D 1 3S D T - fl ¥ ~ DIODE TPi4f\ 515TDR CO. INC. 201) 666-0400 « Telex: 139485 • Outside N Y & NJ area ca ll TO LL FREE 800-526-4581 F A X No. 201*575*5863 Type* NPN Com pJe- VCtO(SUS)
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B48352
TMI\I515T0R
TC-25Â
2N4901
2N5067
1ffl40
2N4902
2N5068
2N4903
2N5069
mj 1504 transistor
transistor mj 1504
2N5862
MJ 5030
transistor b 1560
mj 1504
2N5680
2N5867
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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5s70
Abstract: 1N3604 F100 tl1507
Text: 1 IM 3604 Silicon planar diode The silicon planar diode 1 N 3 6 0 4 in the gla ss package 51 A 2 D IN 41 8 8 0 D O -7 is designed for use as high-speed sw itching diode as well as for general sw itching applications. The planar technique results in short reverse recovery time, small
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Q62702-A104-
I--6411
30rent
5S700
N3604
5s70
1N3604
F100
tl1507
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FMMD6050
Abstract: FMMD914 BAW* diode BAL99 BAR99 BAV70 BAV74 BAV99 ZC830A ZC831A
Text: SOT 23 TRANSISTORS & DIODES SELECTIO N GUIDE SILICO N P LA N A R HIGH SP EED SW ITCH IN G D IO D ES Rat ings Description Type B A S 16 FMMD914 HD3A BA L99 BA R99 FMMD6050 BAV70 BAV74 HD2A BAV99 BA W S6 HD4A Single diode Single diode Single diode Single diode
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FMMD914
BAL99
BAR99
FMMD6050
BAV70
BAV74
BAV99
C9/C20
50MHz
ZC830A
BAW* diode
ZC831A
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U2550
Abstract: HL1361A SR3038 Hitachi Scans-001
Text: 51E D HL1361A-Laser Diode •I MMTbSDS ODllbEb T43 ■ H i m - Under Development HITACHI/ OPTOELECTRONICS - Description HL1361A is a 1.3 ,um InGaAsP distributedfeedback (DFB) laser diode with X/4 phase shifted.
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HL1361A-
HL1361A
U-L10
U2550
SR3038
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: D IO D E M O D U L E DD200HB Power Diode Module D D 200H B series are designed for various rectifier circuits. D D 200H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V
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DD200HB
E76102
M8X14
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IN34A
Abstract: 1N60C IN82A IN67A in69a IN56A 1n62 diode IN34 diode 1N142 diode diode IN97
Text: Iñ DE I b l E E m ? ? D D 0 D D 7 D 4 612 24 77 MICR OWA VE DIODE CORP 18C 0 0 0 7 0 D T - Of ón CROWAVE DIODE CORPORATION . GERMANIUM DIODES r . J r JN34 1N34 4AS A IN3 1 N 3 5 IN38 1N38A 1 N3 1N 4SB 8 1 1N N5 510 1 1N N5S2 2A 1 1N N5 54 4A 1N56 IN5 6 A
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DEiblE2477
1N34A
IN34AS
1N38A
1N52A
1N54A
IN56A
1N5836A
1N127
1N127A
IN34A
1N60C
IN82A
IN67A
in69a
1n62 diode
IN34 diode
1N142 diode
diode IN97
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nec 16f
Abstract: 16F NEC "12f" zener diode NEC 12F RD2.0F 12F NEC RD30F nec zener diode zener uz series
Text: NEC 1W ZENER DIODE HfCTMN KVKX N EC RD2.0F ~ RD82F Type RD TJ F Series are DHD D ouble Heatsink Diode Construction planar type zener diodes possessing an allowable power dissipation o f 1 w att. ¿0 8 ( F C a th o d e indication FEATURES • D H D (D ouble Heatsink D iode) C onstruction
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RD82F
--RD82F
nec 16f
16F NEC
"12f" zener diode
NEC 12F
RD2.0F
12F NEC
RD30F
nec zener diode
zener uz series
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ad130
Abstract: D1103 d1105 MMAD1109 AD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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OCR Scan
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PDF
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MMAD130/D
AD1105
AD1107
ad130
D1103
d1105
MMAD1109
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BAV74
Abstract: DIN 3015
Text: BAV74 Silicon planar twin-diode The silicon planar tw in -d io d e BAV 74 in the minature plastic case 23 A 3 DIN 41869 S O T -23 is suitable fo r use as high-speed s w itch in g diode in film circuits. The diode is coded JA. The stated data apply fo r any diode system, unless otherw ise
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BAV74
OT-23)
Q62702-A
Utt05
03S1-
Tota12
BAV74
DIN 3015
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Untitled
Abstract: No abstract text available
Text: D I O D E M O D U L E f . r .d DD250GB UL;E76102(M) Power Diode Module D D 2 5 0 G B series are designed for various rectifier circuits. D D 2 5 0 G B has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage
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DD250GB
E76102
0002Qbb
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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LED pigtailed
Abstract: Diode PH 13M
Text: M itsubishi O ptical D e vice C la ssifica tio n Item LD modules Wave length •1.3jum/1.55j«m Laser diode •0.98um/1.48Mm for pump Laser diode •InGaAs-PIN Photo diode •InGaAs-APO Photo diode •active diameter ¿20/* m ~«4300^m Device Package •TO CAN, Chip-on-Carrier
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STM-4/OC-12,
LED pigtailed
Diode PH 13M
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7030a
Abstract: light sensitive photo diode MTD7030A MTE1050A MTE1100 cms diode diode 518
Text: MARKTECH INTERNATIONAL lflE D • 571*1^55 GQOGBT? Q ■ PHOTO DIODE MTD7030A "T-MI-S3 SILICON PIN PHOTO DIODE ' CATHODE INDEX D — - E H M Tt 7030A is a high sensitive and high speed photo diode with PIN structure. Employment of filtered mold resin for cutting the visible light are suitable for the detectors of
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MTD7030A
800nm
MTE1050A,
MTE1100
7030a
light sensitive photo diode
MTD7030A
MTE1050A
MTE1100
cms diode
diode 518
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