DIODE CT2 Search Results

s21 diode

Abstract: diode DB 3 C BAP50-03
Contextual Info: BAP50-03 General purpose PIN diode PIN DIODE 50 mAMPERES 50 VOLTS P b Lead Pb -Free Features: * Low diode capacitance * Low diode forward resistance 1 2 Application: SOD-323 * General RF applications. Description: * General purpose PIN diode in a SOD-323 package.

Contextual Info: DKV65222B SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV65222B is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4 /CT20 = 6.3 Typical

70.2 Diode

Contextual Info: DKV6524D SILICON HYPERABRUPT TUNING VARACTOR DIODE DESCRIPTION: The ASI DKV6524D is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.3 Typical

varactor diode datasheet

Abstract: DKV6522-12
Contextual Info: DKV6522-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522-12 is an Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.2 Typical

symbol of varactor diode and equivalent circuit

Abstract: varactor diode notes DKV6522-24
Contextual Info: DKV6522-24 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522-24 is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.0 Typical

Contextual Info: DKV6520B-81 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6520B-81 is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 20 pF Nominal • CT4/CT20 = 5.9 Typical

DKV6522-12

Abstract: "Varactor Diode"
Contextual Info: DKV6522-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522-12 is an Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.2 Typical

DKV6522B

Contextual Info: DKV6522B SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522B is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.3 Typical • Hermetic Glass Package

"Varactor Diode"

Abstract: varactor diode datasheet DKV6522B
Contextual Info: DKV6522B SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522B is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.2 Typical • Hermetic Glass Package

ECONO2-6PACK IGBT module

Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
Contextual Info: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

Contextual Info: CT220802 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Split SCR/Diode POW-R-BLOK Modules 20 Amperes/800 Volts Description: OUTLINE DRAWING Powerex Split SCR/Diode POW-R-BLOK™ Modules are designed for use in applications

DKV6520-12

Abstract: ASI30291
Contextual Info: DKV6520-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6520-12 is an Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 18 pF Min. • CT4/CT20 = 5.8 Typical • Hermetic Glass Package

78996

Abstract: ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538
Contextual Info: PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

GB25RF120K

Contextual Info: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGIB6B60KD
Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGIB15B60KD1P

Abstract: C-150
Contextual Info: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

AN-994

Abstract: C-150 EIA-541 IRFR120
Contextual Info: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.