DIODE CG Search Results

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

Solar Charge Controller

Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

Solar Charge Controller

Abstract: LTC4357H SMAT70A FDB3632 LTC4357 LTC4357HDCB MBR10100 LT16411 ORing fet 48v 5a SBR1V15DSA
Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

ltc4352iddpbf

Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Contextual Info: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss

EBF83

Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Contextual Info: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs

SPL CG94

Abstract: CW laser diode 808 nm 039 opto
Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur

Contextual Info: Laser Diode on Submount 1.0 W cw Laser Diode in offener Bauform 1.0 W cw SPL CGxx_0 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur

CG94

Abstract: Q62702-P1617 Q62702-P358 Q62702-P3494
Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur

CG94

Abstract: Q62702-P1617 Q62702-P358
Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur

Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CG81 SPL CG94 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur

Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CG81 SPL CG94 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur

laser diode lifetime

Contextual Info: Notes for Operation I SAFETY / UNPACKING / HANDLING / MOUNTING / OPERATING of OSRAM Opto Semiconductors high power laser diodes in a metal package. SPL CGxx, SPL 2Yxx, SPL 2Fxx Read this instruction carefully before unpacking to avoid damage of the diode lasers. Diode

Contextual Info: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG98 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur

Contextual Info: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG98 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur

SPL CG65

Contextual Info: Red Laser Diode on Submount 0.5 W cw Rote Laser Diode in offener Bauform 0.5 W cw SPL CG65 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrichbetrieb • Zuverlässige kompressiv verspannte InGaP Quantenfilm-Struktur • Laterale Austrittsöffnung 100 µm

en2617b

Contextual Info: Ordering number:EN2617B _ SVC342 Diffused Junction Type Silicon Diode V aractor Diode for AM Receiver Electronic T uning Use Features •Twin type varactor diode for low-voltage A M electronic tuning use. •High capacitance ratio. •Excellent linearity of C-V characteristic.

GSOY6600

Abstract: Radiation Assured Devices SPL CG65
Contextual Info: Red Laser Diode on Submount 0.5 W cw Rote Laser Diode in offener Bauform 0.5 W cw SPL CG65 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrichbetrieb • Zuverlässige kompressiv verspannte InGaP Quantenfilm-Struktur • Laterale Austrittsöffnung 100 µm

Contextual Info: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG98 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur

CG94-2S

Abstract: CG94 SPL CG94 GSOY6600
Contextual Info: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG94-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur

Contextual Info: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG94-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur

SPL CG81-2S

Abstract: CG81-2S SPL CG81 GSOY6600
Contextual Info: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG81-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur

Contextual Info: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG94-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur