diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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Untitled
Abstract: No abstract text available
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
10-Bit
4357fa
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Solar Charge Controller
Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
LTC4357
LTC4350
LT4351
LTC4354
LTC4355
4357fb
Solar Charge Controller
48V 100W zener diode
14v 10A mosfet
solar controller
FDB3632
solar panel controller
p channel mosfet 100v
Solar Charge Controller Circuit
SMAT70A
solar panel 5v
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Solar Charge Controller
Abstract: LTC4357H SMAT70A FDB3632 LTC4357 LTC4357HDCB MBR10100 LT16411 ORing fet 48v 5a SBR1V15DSA
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
LTC4357
LTC4350
LTC4352
LTC4354
LTC4355
4357fc
Solar Charge Controller
LTC4357H
SMAT70A
FDB3632
LTC4357HDCB
MBR10100
LT16411
ORing fet 48v 5a
SBR1V15DSA
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Untitled
Abstract: No abstract text available
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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4357fb
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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LTC4352
12-Pin
1TC4412HV
8V/36V,
TSOT-23
LTC4413/LTC4413-1
DFN-10
LTC4414
LTC4416/LTC4416-1
ltc4352iddpbf
TRANSISTOR mosfet 9V
LTC4352I
LTC4352
LTC4352IMS
Schottky Diode 80V 6A
LTC4352C
LTC4352CDD
LTC4352IDD
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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SPL CG94
Abstract: CW laser diode 808 nm 039 opto
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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GSO06600
SPL CG94
CW laser diode 808 nm
039 opto
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 1.0 W cw Laser Diode in offener Bauform 1.0 W cw SPL CGxx_0 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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GSO06600
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CG94
Abstract: Q62702-P1617 Q62702-P358 Q62702-P3494
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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GSOY6600
CG94
Q62702-P1617
Q62702-P358
Q62702-P3494
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CG94
Abstract: Q62702-P1617 Q62702-P358
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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GSOY6600
CG94
Q62702-P1617
Q62702-P358
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CG81 SPL CG94 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CG81 SPL CG94 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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laser diode lifetime
Abstract: No abstract text available
Text: Notes for Operation I SAFETY / UNPACKING / HANDLING / MOUNTING / OPERATING of OSRAM Opto Semiconductors high power laser diodes in a metal package. SPL CGxx, SPL 2Yxx, SPL 2Fxx Read this instruction carefully before unpacking to avoid damage of the diode lasers. Diode
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG98 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG98 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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SPL CG65
Abstract: No abstract text available
Text: Red Laser Diode on Submount 0.5 W cw Rote Laser Diode in offener Bauform 0.5 W cw SPL CG65 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrichbetrieb • Zuverlässige kompressiv verspannte InGaP Quantenfilm-Struktur • Laterale Austrittsöffnung 100 µm
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en2617b
Abstract: No abstract text available
Text: Ordering number:EN2617B _ SVC342 Diffused Junction Type Silicon Diode V aractor Diode for AM Receiver Electronic T uning Use Features •Twin type varactor diode for low-voltage A M electronic tuning use. •High capacitance ratio. •Excellent linearity of C-V characteristic.
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EN2617B
SVC342
en2617b
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GSOY6600
Abstract: Radiation Assured Devices SPL CG65
Text: Red Laser Diode on Submount 0.5 W cw Rote Laser Diode in offener Bauform 0.5 W cw SPL CG65 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrichbetrieb • Zuverlässige kompressiv verspannte InGaP Quantenfilm-Struktur • Laterale Austrittsöffnung 100 µm
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG98 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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CG94-2S
Abstract: CG94 SPL CG94 GSOY6600
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG94-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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CG94-2S
CG94-2S
CG94
SPL CG94
GSOY6600
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG94-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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CG94-2S
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SPL CG81-2S
Abstract: CG81-2S SPL CG81 GSOY6600
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG81-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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CG81-2S
SPL CG81-2S
CG81-2S
SPL CG81
GSOY6600
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Untitled
Abstract: No abstract text available
Text: Laser Diode on Submount 2.0 W cw C-Mount Laser Diode in offener Bauform 2.0 W cw (C-Mount) SPL CG94-2S Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Zuverlässige InGa(Al)As kompressiv verspannte Quantenfilm-Struktur
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CG94-2S
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