transistor c114
Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Text: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC
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Intel740TM
BAV99LT1
C3216X7R1C105KT000N
C0805C104K5RAC
C0805C103K5RAC
330PF
T491D106K016AS
C0805C331J5GAC
T491D226K016AS
transistor c114
c102 TRANSISTOR
TRANSISTOR c105
transistor c114 chip
c104 TRANSISTOR
C114 transistor
c107 TRANSISTOR
c106 TRANSISTOR
TRANSISTOR C107
c101 TRANSISTOR
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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PDF
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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PDF
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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PDF
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diode c83 004
Abstract: DZ6V2 DZ6V8 DZ18C DZ3V6 diode c83 004 v a C82 004 diode DZ36 DZ47 DZ13
Text: Central CMDZ2V4 THRU CMDZ47 Semiconductor Corp. SUPER-MINI ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE D ESCRIPTIO N : The C EN TR AL S EM IC O N D U C TO R CMDZ2V4 Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a
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OCR Scan
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CMDZ47
250mW,
diode c83 004
DZ6V2
DZ6V8
DZ18C
DZ3V6
diode c83 004 v a
C82 004 diode
DZ36
DZ47
DZ13
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PDF
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c82 004
Abstract: C4V7 517
Text: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass
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OCR Scan
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BZD23
BZD23-C3V6
BZD23-C7V5
C7V5-C510
bb53R31
2b71R
S0D81.
c82 004
C4V7 517
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Bz027
Abstract: C510 C82 diode BZD27 c82 004 BZD27-C3V6 BZD27-C7V5 C100 C270 C7V5
Text: Philips Sem icpnductors DD 2b 72D 52T BBAPX Product specification Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surlace mounted implosion diode SMID glass envelopes. They are intended
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OCR Scan
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QQ2b72G
BZD27
BZD27-C3V6
BZD27-C7V5
C7V5-C510
MSA020
0D2b72fl
S0D87.
Bz027
C510
C82 diode
c82 004
C100
C270
C7V5
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PDF
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BZD27
Abstract: No abstract text available
Text: Philips Semlcpnductors HU b b 5 3 c131 QQ2b72D S2T HiAPX Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surface mounted implosion diode SMID glass envelopes. They are intended
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OCR Scan
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QQ2b72D
BZD27
BZD27-C3V6
BZD27-C7V5
C7V5-C510
bb53T31
Q02b757
bS3T31
DD2b72fl
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PDF
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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OCR Scan
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PDF
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c82 004
Abstract: C6V8 C510 BZD27 C82 diode BZD27-C3V6 BZD27-C7V5 C100 C110 C270
Text: Philips Semicpnductors bbSB^Bl QQ2b72Q S2T BBAPX Voltage regulator diodes 1 BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surface mounted implosion diode SMID glass envelopes. They are intended for use as voltage regulator and
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OCR Scan
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002b72G
BZD27
BZD27-C3V6
BZD27-C7V5
C7V5-C510
MSA020
bb53T31
002b72A
c82 004
C6V8
C510
C82 diode
C100
C110
C270
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PDF
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BZD23
Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
Text: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for
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OCR Scan
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bb53131
BZD23
BZD23-C3V6
BZD23-C7V5
C7V5-C510
bb53T31
D02ti713
MGA020
c6v8
C510
bje 66
C82 diode
C100
C110
C120
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PDF
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optocoupler mct2e
Abstract: Optocoupler IC MCT2E MCT2E equivalent optocoupler MCT2E IC C1681 mct2e optocoupler ic mct2e optocoupler C1685 transistor transistor c1684 TRANSISTOR C1685
Text: uLJjpr" in iiM iiifiiiii* S i W w iM i k iÆ PHOTOTRANSISTOR OPTOCOUPLER Ê OPTOELECTRONICS MCT2E PACKAGE DIMENSIONS DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS
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C2079
STI603A
E90700
c1294
optocoupler mct2e
Optocoupler IC MCT2E
MCT2E equivalent
optocoupler MCT2E IC
C1681
mct2e optocoupler ic
mct2e optocoupler
C1685 transistor
transistor c1684
TRANSISTOR C1685
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Optocoupler IC MCT2E
Abstract: MCT2E equivalent optocoupler mct2e ic MCT2e
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT2E PACKAGE DIMENSIONS t 6.86 DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. r* 6.35 O I W W L-w FEATURES A APPLICATIONS 8.89
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E50151
C2090
Optocoupler IC MCT2E
MCT2E equivalent
optocoupler mct2e
ic MCT2e
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C2079
Abstract: optocoupler mct2e transistor c1684 C16SE 1R10 diode C1684 C1684 transistor mct2e optocoupler Optocoupler IC MCT2E MCT2E equivalent
Text: ^ 2 J5 E O - ^ I PHOTOTRANSISTOR OPTOCOUPLER 0PT0ELECTRD8ÍC3 MCT2E PACKAGE DIMENSIONS DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS I 2'5 4 ! 0.40 a n o d e JT
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C2079
E90700
C129SA
optocoupler mct2e
transistor c1684
C16SE
1R10 diode
C1684
C1684 transistor
mct2e optocoupler
Optocoupler IC MCT2E
MCT2E equivalent
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PDF
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c12V Zener Diode
Abstract: Zener c10v c36v C82V c24v C91V c51v c18v
Text: ZMM55Cxxx SERIES Surface Mount Zener Diode Cathode Band .063 1.6 .055(1.4 .020(0.5) .012(0.3) .146(3.7) .130(3.3) MINI MELF Dimensions in inches and (millimeters) FEATURES MECHANICAL DATA •Planar Die construction • Case: Molded Glass MINI-MELF • 500mW Power Dissipation
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ZMM55Cxxx
500mW
2002/95/EC
MIL-STD-750,
c12V Zener Diode
Zener c10v
c36v
C82V
c24v
C91V
c51v
c18v
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PDF
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MGA018
Abstract: 305 5VL c7v5 C510 C82 diode c82 004 mga01 Philips MBB working of voltage regulator BZD23-C3V6
Text: N AMER PHILIPS/DISCRETE t'JE J> bb53T31 002b711 51? * A P X m Philips Sem iconductors Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for use as voltage regulator and
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OCR Scan
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BZD23
BZD23-C3V6
C7V5-C510
BZD23-C7V5
MQA020
MGA018
305 5VL
c7v5
C510
C82 diode
c82 004
mga01
Philips MBB
working of voltage regulator
BZD23-C3V6
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PDF
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TC8220
Abstract: N mosfet 100v 500A 7SN2 TC8220K6-G DFN PACKAGE thermal resistance
Text: Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold, Low on-resistance
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TC8220
TC8220
12-Lead
DSFP-TC8220
A120910
N mosfet 100v 500A
7SN2
TC8220K6-G
DFN PACKAGE thermal resistance
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PDF
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Untitled
Abstract: No abstract text available
Text: f i PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS II MCT2E PACKAGE DIMENSIONS DESCRIPTION T h e M C T 2E is a NPN silicon planar phototransistor db f i Æ optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS Utility/econom y isolator
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OCR Scan
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Vcea110
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PDF
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HIGH VOLTAGE DIODE kv
Abstract: C8237 H8236-07 H8236-40 GaAsP Laser Diode Hamamatsu avalanche diode
Text: HPD HYBRID PHOTO-DETECTOR MODULES H8236-07, -40 PRELIMINARY DATA OCT. 2000 PATENT PENDING The HPD (Hybrid Photo-Detector) is a new vacuum photo-detector including a photocathode and an avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication
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H8236-07,
SE-171-41
TPMO1011E03
HIGH VOLTAGE DIODE kv
C8237
H8236-07
H8236-40
GaAsP Laser Diode
Hamamatsu avalanche diode
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PDF
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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BZT03 27
Abstract: C82 diode BZT03 BZT03-C510 BZT03-C7V5 C100 C110 C8V2 DIODE C3331
Text: N AMER PHILIPS/DISCRETE bbS3^31 b'îE D 00Eb7E'ì 757 • APX BZT03 SERIES I REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres
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OCR Scan
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00Eb7EcÃ
BZT03
BZT03-C7V5
BZT03-C510
OD-57.
QDSb733
BZT03 27
C82 diode
C100
C110
C8V2 DIODE
C3331
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'JE D bbS3^31 00Eb7E'l 7S7 « A P X BZT03 SERIES l REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres
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OCR Scan
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00Eb7E
BZT03
BZT03-C7V5
BZT03-C510
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PDF
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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