DIODE C55 Search Results

CW laser diode 808 nm

Abstract: 1 Watt 808 nm laser diode laser diode 808nm
Contextual Info: TH-C1730-H & TH-C5530-H / TH-C1840-H CONDUCTIVELY COOLED CW LINEAR BAR ARRAY DESCRIPTION The TH-C1730-H, TH-5530-H and TH-C1840-H products are based upon highly performing 30W and 40W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a

multiple wavelength laser

Contextual Info: TH-C5520-S or PI TH-C5530-S or P 940nm CW LINEAR BAR ARRAY DESCRIPTION The TH-C5520-S and TH-C5530-S products are a highly performing 20W CW and 30W CW, 940nm Laser Diode Bar Array assembled on a conductively cooled package. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm

Contextual Info: BL GALAXY ELECTRICAL BAS86 VOLTAGE RANGE: 50 V CURRENT: 0.2 A SMALL SIGNAL SCHOTTKY DIODE FEATURES Mini-melf For general purpose applications This diode features very low turn-on voltage and fast switching. These devices are protected Cathode indification

Contextual Info: BL GALAXY ELECTRICAL BAS85 VOLTAGE RANGE: 30 V CURRENT: 0.2 A SMALL SIGNAL SCHOTTKY DIODE FEATURES Mini-melf For general purpose applications This diode features very low turn-on voltage Cathode indification and fast switching. These devices are protected

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

diode C55

Abstract: CMDSH05-4 SOD-323 C55 MARKING CMDSH05-4 sod-323 "junction to case" diode SOD-323 sod-323 diode MARKING CODE 4 schottky diode sod diode marking 35
Contextual Info: Central CMDSH05-4 SURFACE MOUNT SUPERminiTM LOW VF SILICON SCHOTTKY DIODE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH05-4 is a 40 volt Schottky Diode packaged in a space saving surface mount SOD-323 case. This SUPERmini device has been designed for

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Contextual Info: BAS86 Small Signal Schottky Diode VOLTAGE RANGE: 50 V CURRENT: 0.2 A Mini-melf Features Cathode indification For general purpose applications φ1 .5±0.1 This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive

Contextual Info: CMDSH05-4 SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH05-4 is a 40 volt Schottky Diode packaged in a space saving surface mount SOD-323 case. This SUPERmini device has been designed for

CMDSH05-4

Abstract: CMDSH05-4 SOD-323 diode C55 Marking code L SOD-323 Marking code L SOD-323 diode C55
Contextual Info: CMDSH05-4 SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH05-4 is a 40 volt Schottky Diode packaged in a space saving surface mount SOD-323 case. This SUPERmini device has been designed for

Contextual Info: TH-C5520-S / TH-C5530-S TH-C5520-P / TH-C5530-P 940nm CW LINEAR BAR ARRAY DESCRIPTION The TH-C5520-S and TH-C5530-S products are a highly performing 20W CW and 30W CW, 940nm Laser Diode Bar Array assembled on a conductively cooled package. An actively cooled package is also available ‘P’

PTD4061-4XXX

Abstract: HI-TECH c18 G957 IEC825
Contextual Info: www.neophotonics.com VER000/ 190307 PTD4061-4XXX + 2.5Gbps DWDM SFP Transceiver 1 1.1 Features Transceiver unit with independent DWDM DFB laser diode transmitter APD photodiode receiver 1.2 Compliant with DWDM SFP MSA 1.3 Compliant with SFP MSA with duplex LC receptacle

PTD5061-5XXX

Abstract: 160km HI-TECH c18 neophotonics 1000BASE-LX G957 IEC825 BLD 128 D
Contextual Info: www.neophotonics.com VER000/ 051308 PTD5061-5XXX + 2.5Gbps DWDM SFP Transceiver 1 1.1 Features Transceiver unit with independent DWDM DFB laser diode transmitter APD photodiode receiver 1.2 Compliant with DWDM SFP MSA 1.3 Compliant with SFP MSA with duplex LC receptacle

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor • • • • • • 4 D-PAK Features Equivalent Circuit High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application

diode 1n6263

Abstract: 1N6263
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE 1N6263 VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW FEATURES DO - 35 GLASS For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage

Contextual Info: BAT41 Small Signal Schottky Diodes VOLTAGE RANGE: 100 V CURRENT: 100 mA Features DO - 35 GLASS For general purpose applications This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive

Contextual Info: BAT85 Small Signal Schottky Diodes VOLTAGE RANGE: 30 V CURRENT: 0.2 A Features For general purpose applications DO - 35 GLASS This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive

Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE LL45 VOLTAGE RANGE: 15 V CURRENT: 30 mA FEATURES MINI-MELF For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage Cathode indification

7.5kv diode

Contextual Info: RECTIFIER, up to 7.5kV, 180mA, 300ns January 7, 1998 QUICK REFERENCE DATA V r = 5 - 7.5kV = 180mA If trr = 300nS Ir = 0.25^A F50 F75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE

BAS85

Contextual Info: BL GALAXY ELECTRICAL BAS85 VOLTAGE RANGE: 30 V CURRENT: 0.2 A SMALL SIGNAL SCHOTTKY DIODES FEATURES Mini-melf For general purpose applications This diode features very low turn-on voltage and fast switching. These devices are protected SOLDERABLE ENDS by a PN junction guard ring against excessive

7.5kv diode

Contextual Info: RECTIFIER, up to 7.5kV, 180mA, 300ns January 7, 1998 QUICK REFERENCE DATA V r = 5 - 7.5kV If = 180mA trr = 300nS Ir = 0.25^A F50 F75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE