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    DIODE C536 Search Results

    DIODE C536 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE C536 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC


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    FF1400R12IP4 367C4326BC 97F6F8 36F1322 A2CB36 1231423567896AB 4112CD3567896EF PDF

    IFS100B12N3E4

    Abstract: C5363 IFS100B12N3E4B
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current


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    IFS100B12N3E4 428654F4 BCFC24 E32DC BCFC26 E32DC6 6734F 9C46E4 BC33694 1231423567896AB C5363 IFS100B12N3E4B PDF

    IFS150B12N3T4_B31

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    IFS150B12N3T4 E1322 FF326DC FC26E1 2313F D36134 1231423567896AB 54F36C 4112CD3567896BE IFS150B12N3T4_B31 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC


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    FF900R12IP4 367C4326BC 97F6F8 36F1322 A2CB36 1231423567896AB 4112CD3567896EF PDF

    diode c24 06 6D

    Abstract: LTC4098-3.6
    Text: Technische Information / technical information FF450R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC


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    FF450R12IE4 326A11 89F6F8 36F1322 B2CC36 DC336E 1231423567896AB 4112CD3567896EF diode c24 06 6D LTC4098-3.6 PDF

    474F3

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    IFS75B12N3E4 E1322 FF326DC FC26E1 2313F D36134 1231423567896AB 54F36C 4112CD3567896BE 474F3 PDF

    C26B

    Abstract: GDS C25/0 diode e61 GDS C25/1231423567896AB
    Text: Technische Information / technical information FF900R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC


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    FF900R12IE4 326A11 78F6F8 36F1322 A2CB36 CC236D 1231423567896AB 4112CD3567896EF C26B GDS C25/0 diode e61 GDS C25/1231423567896AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FF600R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC


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    FF600R12IE4 326A11 89F6F8 36F1322 B2CC36 DC336E 1231423567896AB 4112CD3567896EF PDF

    LTC4098-3.6

    Abstract: No abstract text available
    Text: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC


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    FF600R12IP4 367C4326BC 97F6F8 36F1322 A2CB36 1231423567896AB 4112CD3567896EF LTC4098-3.6 PDF

    LTC4098-3.6

    Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense


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    IFS75B12N3E4 428654F4 BCFC24 E32DC BCFC26 E32DC6 6734F 9C46E4 327C53 1231423567896AB LTC4098-3.6 se666 k3332 edt0145.6 SEH-01T-P0.6 PDF

    c5353

    Abstract: c5387 diode MARKING CODE 930 marking code R3 CMZ5388B
    Text: Central CMZ5342B THRU CMZ5388B TM Semiconductor Corp. HIGH POWER ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy


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    CMZ5342B CMZ5388B 26-September c5353 c5387 diode MARKING CODE 930 marking code R3 PDF

    LTC4098-3.6

    Abstract: A20-LCD15.6 SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


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    IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6 PDF

    LTC4098-3.6

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC


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    FF900R12IP4D 366C4326BC 86F6F8 36F1322 A2CB36 5C336C 1231423567896AB 4112CD3567896EF LTC4098-3.6 PDF

    diode F4 6A

    Abstract: 4F36F123
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


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    IFS100B12N3E4 428654F4 D3264 ECFC24 B32DC D3692C CD3288 ECFC26 B32DC6 6934F diode F4 6A 4F36F123 PDF

    C5388

    Abstract: C5386 transistor C5386 transistor C5388 c5387 transistor C536 c5353 c5344 C5352 c5354
    Text: Central CMZ5342B THRU CMZ5388B SURFACE MOUNT HIGH POWER SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy


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    CMZ5342B CMZ5388B C5385B CMZ5386B C5386B CMZ5387B C5387B C5388B C5388 C5386 transistor C5386 transistor C5388 c5387 transistor C536 c5353 c5344 C5352 c5354 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CMZ5342B THRU CMZ5388B SURFACE MOUNT HIGH POWER SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy


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    CMZ5342B CMZ5388B C5385B CMZ5386B C5386B CMZ5387B C5387B C5388B PDF

    C5388B

    Abstract: c5387 c5344 C5374B marking code r4 C5347B C5386 C5357 CMZ5 C5343
    Text: Central CMZ5342B THRU CMZ5388B SURFACE MOUNT HIGH POWER SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy


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    CMZ5342B CMZ5388B 03-June C5388B c5387 c5344 C5374B marking code r4 C5347B C5386 C5357 CMZ5 C5343 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ600R12KE3_B1 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode 62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode #$%&6'6#


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    FZ600R12KE3 4266C33267C C2682 322642C 36FC7 ABC66 1231423567896AB 4112CD3567896EF PDF

    c5353

    Abstract: c5387 MARKING CODE r5 c5348 CMZ5388B
    Text: Central CMZ5342B THRU CMZ5388B SURFACE MOUNT HIGH POWER SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy


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    CMZ5342B CMZ5388B 12-February c5353 c5387 MARKING CODE r5 c5348 PDF

    C5388

    Abstract: C5386 C5387 c5353 C5388B c5386b c5360 c5348 C5343 C5375B
    Text: Central CMZ5342B THRU CMZ5388B SURFACE MOUNT HIGH POWER SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy


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    CMZ5342B CMZ5388B C5385B CMZ5386B C5386B CMZ5387B C5387B C5388B C5388 C5386 C5387 c5353 C5388B c5386b c5360 c5348 C5343 C5375B PDF

    R222 smd

    Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
    Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP


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    CA-001175 BA41-00418A BA62-00194A BA62-00306A BA68-40005L 120OHM 143OHM/132MHZ 213OHM/390MHZ, R222 smd RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548 PDF

    samsung r540

    Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
    Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP


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    ZD500 QF500 RHU002N06 200MA OT-323 F820P 33x33mm 500MHz K4J52324QC 512Mbit samsung r540 Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535 PDF

    C5386

    Abstract: C5388 c5387 c5344 C5352 c5351 c5386b c5343 c538 c5353
    Text: Central CMZ5342B THRU CMZ5388B Semiconductor Corp. HIGH POWER ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy molded


    OCR Scan
    CMZ5342B c5386b CMZ5387B c5387b CMZ5388B c5388b C5386 C5388 c5387 c5344 C5352 c5351 c5386b c5343 c538 c5353 PDF

    c5387

    Abstract: C5342
    Text: Central" CMZ5342B THRU CMZ5388B Semiconductor Corp. HIGH POWER ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy molded


    OCR Scan
    CMZ5342B CMZ5388B CMZ5342B* CMZ5343B* CMZ5344B* CMZ5345B* CMZ5346B* CMZ5347B CMZ5348B CMZ5349B c5387 C5342 PDF