DIODE C35 Search Results

Contextual Info: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber

C3520

Abstract: c3524
Contextual Info: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber

Contextual Info: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber

Js SMD MARKING CODE SOT23

Abstract: jtp sot23 smd code marking js BAS21N3 N3 smd JTp smd
Contextual Info: CYStech Electronics Corp. Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 1/4 High voltage switching diode BAS21N3 Description The BAS21N3 is a general purpose diode fabricated in planar technology and encapsulated in a small SOT-23 plastic SMD package.

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

C35B

Abstract: C35A diode c35 C35D C35G C35J C35K free diode
Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Melles Griot Laser Diode driver

Abstract: SPLPL90_0 diode laser power supply melles griot Melles Griot 4,7uF 50v R1720 1000X 10UF 2N7002 47UF
Contextual Info: EVLDO2 Evaluation Board For The IXLDO2 Ultra High Speed Laser Diode Driver IC. Introduction The IXLDO2 laser diode driver is designed to drive single junction laser diodes in a differential fashion. This technique provides the highest possible slew rate across the diode. The IXLDO2 is capable

C3536

Contextual Info: C3520, C3524, C3536 35A AVALANCHE AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data      B Case: Cell Diode Passivated with Silicon Rubber

Contextual Info: C35A – C35K 35A AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data      B Case: Cell Diode Passivated with Silicon Rubber

transistor c114

Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Contextual Info: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

marking c35

Abstract: c35 transistor diode c35
Contextual Info: Central CMLM0305T MULTI DISCRETE Semiconductor Corp. MODULE SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM DESCRIPTION: The Central Semiconductor CMLM0305T is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode

EVR20

Abstract: diode 1n4742 Diode DO12 1N47S2 IN4756 IN4748 EVR10 EVR16 EVR30 in4758
Contextual Info: 3869720 GENERAL DIODE C O R P _ GENERAL DIODE CORP 86D 00351 D 7"— / 3 flb _ DE Bflb'íTSO 0DG0351 b 1 WATT SILICON ZENER DIODES . . . cont’d TYPE TYPE 1N3041 1N 3042 1N3043 1N3044 1N304S 00-12 Do-12 Do-12 Do-12 Do-12 75 82 91 100 110

C35 zener

Abstract: diode c35 LT3973-3.3 LT3971-3.3
Contextual Info: Z1 SMA1 . Z1 SMA100 1W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter 6 @ + =   ;   Absolute Maximum Ratings Symbol Conditions Surface mount diode  ;    = 60 @ + 

Contextual Info: ERC35 2.5A ( 200V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications C35 -02 Abridged type name 70 Lot No. •·· High speed switching

Contextual Info: ERC35 2.5A ( 200V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications C35 -02 Abridged type name 70 Lot No. •·· High speed switching

ERC35

Contextual Info: ERC35 2.5A ( 200V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications C35 -02 Abridged type name 70 Lot No. •·· High speed switching

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

PTD4061-4XXX

Abstract: HI-TECH c18 G957 IEC825
Contextual Info: www.neophotonics.com VER000/ 190307 PTD4061-4XXX + 2.5Gbps DWDM SFP Transceiver 1 1.1 Features Transceiver unit with independent DWDM DFB laser diode transmitter APD photodiode receiver 1.2 Compliant with DWDM SFP MSA 1.3 Compliant with SFP MSA with duplex LC receptacle