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    DIODE C309 Search Results

    DIODE C309 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE C309 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC647

    Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		PDF MMBD4148 200MA OT-23 MBR0540 OD-123 1000MA DO-214AC B340A 5245B 225MW BC647 bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645

    77C7

    Abstract: 887c 1r12r
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		PDF

    R222 smd

    Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
    Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP


    Original     		PDF CA-001175 BA41-00418A BA62-00194A BA62-00306A BA68-40005L 120OHM 143OHM/132MHZ 213OHM/390MHZ, R222 smd RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548

    samsung r540

    Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
    Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP


    Original     		PDF ZD500 QF500 RHU002N06 200MA OT-323 F820P 33x33mm 500MHz K4J52324QC 512Mbit samsung r540 Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535

    new bright R288-2

    Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
    Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz


    Original     		PDF 200/266/333MHZ Y1-27MHz Y2-14 318MHz ICS950405 M10/M11 K8T800 Y5-32 768MHz 266/533MB/s new bright R288-2 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT

    C30902S

    Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
    Text: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip


    Original     		PDF C30902E C30902E, C30902S, C30921E, C30921S C30902S geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S

    C30902EH

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This


    Original     		PDF C30902 C30902EH C30921EH DTS0408

    C30902SH-DTC

    Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
    Text: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the


    Original     		PDF C30902EH C30921EH C30902SH-DTC PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode

    C30902EH

    Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
    Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as


    Original     		PDF C30902EH C30921EH DTS0408 C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30902 and C30921 Series High-speed solid state detectors for low light level applications Key Features • High quantum efficiency: 77% typical at 830 nm  C30902SH and C30921SH can be operated in Geiger mode  C30902EH/SH-2 version with


    Original     		PDF C30902 C30921 C30902SH C30921SH C30902EH/SH-2 C30902BH C30902EH

    MAD1103P

    Abstract: mad1108P MAD130 MAD1107P MAD130P MAD1103 MAD130C 817 opto IFR 740 MAD1103F
    Text: MOTOROLA SC DIODES/OPTO bêE » • b3b?255 DDÔ7H1] MAD130 MADI103 MAD1107 MAD1108 MOTOROLA <§ SEMICONDUCTORS P .O . B O X 2 0 9 1 2 • P H O E N IX . A R I Z O N A TÛD ■ M0T7 85036 DIODE ARRAY These diode arrays are m u ltip le diode ju n c tio n s fa b rica te d by a


    OCR Scan     		PDF MAD130 MADI103 MAD1107 MADI108 C309M MAD1103P mad1108P MAD1107P MAD130P MAD1103 MAD130C 817 opto IFR 740 MAD1103F

    C30902E

    Abstract: C30921S avalanche photodiode c30902e C30921E C30902 740417 C30902S geiger RCA Transistor rca power transistor
    Text: RCA IO E D I 7MfiMb7S OQOQlSb U | T ' H i - INC/ ELECTRO OPTICS I t C il Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C3Q921S >?!-»»»'r.-V- D A T A S H E E T High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications


    OCR Scan     		PDF C30902E, C30902S, C30921E, C30921S L-571 L-933 C30902E C30921E C30902S C30921S avalanche photodiode c30902e C30921E C30902 740417 geiger RCA Transistor rca power transistor

    Untitled

    Abstract: No abstract text available
    Text: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava­


    OCR Scan     		PDF C30902E, C30902S, 0921E, C30921S C30902E L-571 L-933 C30921E C30902E C30902S

    Untitled

    Abstract: No abstract text available
    Text: G & G/CANADA/OPTOELEK itesi ID D BDBGblD ODGGOMb Electro Optics and Devices T70 « C A N A /-Y/’b Solid State Detectors Developmental Types C30952 Series Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications


    OCR Scan     		PDF C30952 5x103 0x103 C30952E, C30952F, C30952G 12-lead

    C30950E

    Abstract: C30950 equivalent RCA Solid State power devices C30952E rca 514 C30971 C30952F C30950 RCA 3,5 MM 4-PIN
    Text: G E ELECTRO OPTICS itCil IDE D Electro Optics and Devices 3Û74154 QQQQQ4b 5 H GEEO 7' V A k 7 Solid State Detectors Developmental Types C30952 Series € Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications


    OCR Scan     		PDF C30952 5x103 0x103 0x102 C30950E C30950 equivalent RCA Solid State power devices C30952E rca 514 C30971 C30952F C30950 RCA 3,5 MM 4-PIN

    C30952E

    Abstract: C30950E C30952F C30950 C30807 C30952EL C30952FL C30952G C30952GL C30971E
    Text: R C A 1QE D I 74041=75 DOQDOMt. A | 7 ' V A i » 7 INC/ ELECTRO OPTICS .N l / LLLv. I KV R C/1 Electro Optics and Devices Solid State Detectors Developmental Types C30952 Series f Photodiodes Very Wide B a n d p a ss Silicon Photodiode - Preamplifier M odules


    OCR Scan     		PDF 74S4fci C30952 5x10s 0x102 6084V1 C30952E C30950E C30952F C30950 C30807 C30952EL C30952FL C30952G C30952GL C30971E

    C30902S

    Abstract: diode C309 C30902E rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias
    Text: E G & G/CANADA/OPTOELEK I t c / T OptiCS IO T1 Silicon Avalanche Photodiodes 3G3DblD DDGDlEb 0b3 • CANA » C30902E, C30902S, C30921E, C30921S DATA SHEET I High Speed Solid State Detectors for Fiber Optic and Very L o w Lig h t-Le ve l Applications RCA Type C30902E ava­


    OCR Scan     		PDF C30902E, C30902S, C30921E, C30921S L-571 L-933 C30902E C30921E C30902S diode C309 rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias

    Untitled

    Abstract: No abstract text available
    Text: E G & G / CANADA/OPTOELEK IO D a o a O b l D DDDD1S7 7 3 7 B C A N A VtCil Optics Si diode C30974E DATA SHEET Rectangular Silicon Avalanche Photodiode Preamplifier Module • Responsivity at TA « 25°C 3.7 x 10s V/W at 900 nm — 1.8 x 10s V/W at 1060 mn


    OCR Scan     		PDF C30974E C30974E ED-0034/10/88

    RCA 014

    Abstract: emitter "1060 nm" C30974E rca linear "photodiode " 011 photodiode Avalanche photodiode avalanche photodiode bias
    Text: E G & G/CANADA/OPTOELEK IO 3D3ühlD DDDD157 737 • CANA ItCilE T - H - Î 7 Si diode C30974E DATA SHEET Optics Rectangular Silicon Avalanche Photodiode Preamplifier Module ■ Responsivity at TA = 25°C 3.7 x 10s V/W at 900 ran — 1.8 x 10s V/W at 1060 mn


    OCR Scan     		PDF 3D30hl0 C30974E C30974E 12-lead ED-0034/10/88 RCA 014 emitter "1060 nm" rca linear "photodiode " 011 photodiode Avalanche photodiode avalanche photodiode bias

    C30902E

    Abstract: 30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090
    Text: 1 J l E C s 3 * 1 - 3 9 8 C O P TO ELECTR O N ICS C30902E, C30902S, C30921E. C 3 0921S, C30902BST, C30902BFC C c J i7 c iC / < 3 High Speed Solid State Detectors for Fibre Optic and Very Low Light-Level Applications EG&G 30902E avalanche photodiode utilises a silicon


    OCR Scan     		PDF C30902E, C30902S. C30921E. C30921S, C30902BST. C30902BFC 30902E C30902E/S C30921E/S C30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090

    C30950E

    Abstract: C30950EL C30950 equivalent C30817 30950G RCA Solid State C30950 C30902 C30902E
    Text: ELECTRO OPTICS R C IDE D /1 m Electro O ptics and Devices 3Û741S4 □□OODMM 1 m GEEO _ T ' - H l - io ~ J Solid State Detectors Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		PDF 741S4 C30950 6x10s 9x10s 9x104 C30950E C30950EL C30950 equivalent C30817 30950G RCA Solid State C30902 C30902E

    Untitled

    Abstract: No abstract text available
    Text: G & G/CANADA/OPTOELEK WM • IQ 3D3DL1D 0G000M4 1TÔ io l «CANA Solid State Detectors ~ MW Electro Optics and Devices Developmental Types C30950 Seríes Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		PDF 0G000M4 C30950 6x10s 9x10s 9x104 C30950E, C30950F, C30950G

    C30817

    Abstract: photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL
    Text: C A INC/ ELECTRO OPTICS IDE D I 74A4L.75 000D04M 4 | ItCil */|- Solid State Detectors ~ Electro Optics and Devices Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		PDF 74fl4b75 000D044 C30950 6x10s 9x10s 9x104 6084V1 C30817 photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL

    C30950E

    Abstract: C30817 C30950EL photodiode preamplifier C30950 avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State
    Text: E G & G/CANADA/OPTOELEK 10 D • Electro Optics and Devices _ 7 “^- *//•' iol 303DL1D 0000044 ITfl ■ CANA R G il Solid State Detectors Developmental Types C30950 Series € Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules


    OCR Scan     		PDF 303DL1D C30950 6x10s 9x10s C30950E C30817 C30950EL photodiode preamplifier avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State